BD 147
Abstract: L1000-BD 47146 BD 747 MMIC AMPLIFIER 6-20 GHZ TS3332LD XL1000-BD XL1000-BD-000V Au Sn eutectic
Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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PDF
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L1000-BD
24-Jul-07
MIL-STD-883
XL1000-BD-000V
XL1000-BD-EV1
XL1000
BD 147
L1000-BD
47146
BD 747
MMIC AMPLIFIER 6-20 GHZ
TS3332LD
XL1000-BD
XL1000-BD-000V
Au Sn eutectic
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L1000 16
Abstract: 4846-1 XL1000 power supply 47146 ablestick 550 84-1LMI XL1000 45980 air 7306
Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000 April 2005 - Rev 01-Apr-05 Features Chip Device Layout Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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Original
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PDF
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L1000
01-Apr-05
MIL-STD-883
L1000 16
4846-1
XL1000 power supply
47146
ablestick 550
84-1LMI
XL1000
45980
air 7306
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L1000-BD
Abstract: XL1000-BD-EV1 XL1000-BD
Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD January 2010 - Rev 18-Jan-10 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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Original
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PDF
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L1000-BD
18-Jan-10
MIL-STD-883
aL1000-BD-EV1
XL1000
L1000-BD
XL1000-BD-EV1
XL1000-BD
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47146
Abstract: L1000-BD TS3332LD XL1000-BD XL1000-BD-EV1
Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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Original
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PDF
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L1000-BD
24-Jul-07
MIL-STD-883
XL1000-BD-000V
XL1000-BD-EV1
XL1000
47146
L1000-BD
TS3332LD
XL1000-BD
XL1000-BD-EV1
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XL1000-BD
Abstract: XL1000-BD-000V XL1000-BD-EV1 28LN3UA0338
Text: XL1000-BD Low Noise Amplifier 20.0-40.0 GHz Rev. V1 Features Chip Device Layout • Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure
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Original
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PDF
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XL1000-BD
MIL-STD-883
XL1000-BD
XL1000-BD-000V
XL1000-BD-EV1
28LN3UA0338
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Untitled
Abstract: No abstract text available
Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000 April 2005 - Rev 01-Apr-05 Features Chip Device Layout Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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Original
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PDF
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L1000
01-Apr-05
MIL-STD-883
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