Untitled
Abstract: No abstract text available
Text: Paper Sensor KPS1003C- □ Description The KPS1003C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation
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KPS1003C-
KPS1003C
21-JAN-11
KSD-XXXXXX-000
KPS1003C-T
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CEA-XX-250UN-120
Abstract: CEA-XX-250UN-350
Text: 250UN Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250UN-120 CEA-XX-250UN-350 120 ± 0.3% 350 ± 0.3% P2 P2 actual size DESCRIPTION General-purpose gage with narrow geometry. Exposed
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250UN
CEA-XX-250UN-120
CEA-XX-250UN-350
250UW
22-Feb-10
CEA-XX-250UN-120
CEA-XX-250UN-350
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Untitled
Abstract: No abstract text available
Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated
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Si1012CR
SC-75A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: AT91SAM ARM-based Embedded MPU SAM9263 Description The AT91SAM9263 32-bit microcontroller, based on the ARM926EJ-S processor, is architectured on a 9-layer matrix, allowing a maximum internal bandwidth of nine 32-bit buses. It also features two independent external memory buses, EBI0 and EBI1, capable of interfacing with a wide range of memory devices and an IDE hard disk. Two external buses prevent
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AT91SAM
SAM9263
AT91SAM9263
32-bit
ARM926EJ-S
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Untitled
Abstract: No abstract text available
Text: VS-6CWQ03FN-M3 Vishay Semiconductors Schottky Rectifier, 2 x 3.5 A FEATURES Base common cathode 4 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition 2 Common
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VS-6CWQ03FN-M3
O-252AA)
J-STD-020,
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: MMBD7000-V-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified 1 • Material categorization:
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MMBD7000-V-G
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
MMBD7000-V-G-18
MMBD7000-V-G-08
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Untitled
Abstract: No abstract text available
Text: MMBD7000-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified 1 • Material categorization:
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MMBD7000-V
AEC-Q101
OT-23
GS18/10K
10K/box
GS08/3K
15K/box
MMBD7000-V-GS18
MMBD7000-V-GS08
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TSOP85438AP5
Abstract: TSOP8 TSOP85238AP5 TSOP85256AP5 TSOP85 TSOP85236 TSOP852 TSOP85230AP5 TSOP85233AP5 TSOP85236AP5
Text: TSOP852.AP5, TSOP854.AP5 Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detectors and preamplifier in one package • Internal filter for PCM frequency • Supply voltage: 2.5 V to 5.5 V
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TSOP852.
TSOP854.
2002/95/EC
2002/96/EC
18-Jul-08
TSOP85438AP5
TSOP8
TSOP85238AP5
TSOP85256AP5
TSOP85
TSOP85236
TSOP852
TSOP85230AP5
TSOP85233AP5
TSOP85236AP5
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Untitled
Abstract: No abstract text available
Text: RMKD CNP Vishay Sfernice Hermetic, Dual-In-Line Packaged Resistor Networks FEATURES Actual Size The superstable RMKD nickel-chromium integrated networks are available in a range of standard designs which bring a completely new “state-of-the-art” to precision
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2002/95/EC
10hay
11-Mar-11
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VSMG2020X01
Abstract: VSMG2000 VSMG2000X01 VEMD2000X01 VSMG2020
Text: VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES VSMG2000X01 • • • • • • • • • • • • • • • Package type: surface mount Package form: GW, RGW Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8
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VSMG2000X01,
VSMG2020X01
VSMG2000X01
AEC-Q101
VEMD2000X01
J-STD-020
2002/95/EC
2002/96/EC
18-Jul-08
VSMG2020X01
VSMG2000
VSMG2000X01
VSMG2020
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Untitled
Abstract: No abstract text available
Text: 015DJ Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-015DJ-120 EP-08-015DJ-120 SA-XX-015DJ-120 SK-XX-015DJ-120 120 ± 0.3%
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015DJ
EA-XX-015DJ-120ï
EP-08-015DJ-120ï
SA-XX-015DJ-120ï
SK-XX-015DJ-120
015EH
28-Jan-10
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Untitled
Abstract: No abstract text available
Text: 125BT Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-125BT-120 ED-DY-125BT-350 WA-XX-125BT-120 WK-XX-125BT-350 EP-08-125BT-120
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125BT
EA-XX-125BT-120ï
ED-DY-125BT-350ï
WA-XX-125BT-120ï
WK-XX-125BT-350ï
EP-08-125BT-120ï
SA-XX-125BT-120ï
SK-XX-125BT-350ï
SD-DY-125BT-350ï
WD-DY-125BT-350
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WK-XX-250BG-350
Abstract: No abstract text available
Text: 250BG Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 120 ± 0.15% 350 ± 0.3% 120 ± 0.3% 350 ± 0.3% 100 ± 0.15% 120 ± 0.15% 120 ± 0.3%
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250BG
EA-XX-250BG-120
ED-DY-250BG-350
WA-XX-250BG-120
WK-XX-250BG-350
EA-XX-250BG-100
EP-XX-250BG-120
SA-XX-250BG-120
SK-XX-250BG-350
SD-DY-250BG-350
WK-XX-250BG-350
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Untitled
Abstract: No abstract text available
Text: 125AC Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA actual size GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-125AC-350 ED-DY-125AC-10C EK-XX-125AC-10C S2K-XX-125AC-10C WA-XX-125AC-350
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125AC
EA-XX-125AC-350
ED-DY-125AC-10C
EK-XX-125AC-10C
S2K-XX-125AC-10C
WA-XX-125AC-350
WK-XX-125AC-10C
EP-08-125AC-350
SA-XX-125AC-350
SK-XX-125AC-10C
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Untitled
Abstract: No abstract text available
Text: 125LW Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION OPTIONS AVAILABLE RESISTANCE OHMS See Note 1 L2A-XX-125LW-120 L2A-XX-125LW-350 C2A-XX-125LW-120 C2A-XX-125LW-350 120 ± 0.6% 350 ± 0.6%
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125LW
L2A-XX-125LW-120ï
L2A-XX-125LW-350ï
C2A-XX-125LW-120ï
C2A-XX-125LW-350
27-Apr-2011
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C2A-XX-250LW-350
Abstract: L2A-XX-250LW-350
Text: 250LW Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1 120 ± 0.6% 350 ± 0.6% 120 ± 0.6% 350 ± 0.6% L2A-XX-250LW-120 L2A-XX-250LW-350 C2A-XX-250LW-120 C2A-XX-250LW-350
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250LW
L2A-XX-250LW-120
L2A-XX-250LW-350
C2A-XX-250LW-120
C2A-XX-250LW-350
27-Apr-2011
C2A-XX-250LW-350
L2A-XX-250LW-350
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Untitled
Abstract: No abstract text available
Text: VS-6CWQ03FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 3.5 A FEATURES Base common cathode 4 • Popular D-PAK outline • Center tap configuration • Small foot print, surface mountable • Low forward voltage drop 2 Common cathode 1 3 Anode Anode D-PAK TO-252AA
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VS-6CWQ03FNPbF
O-252AA)
2002/95/EC
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUM110N04-2m1P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SUM110N04-2m1P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Typical Performance Characteristics www.vishay.com Vishay Sprague TH5 Tantalum Capacitors ELECTRICAL PERFORMANCE CHARACTERISTICS ITEM PERFORMANCE CHARACTERISTICS Category temperature range -55 °C to +200 °C Category voltage Category voltage is the same within entire temperature range and is equal to rated voltage
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MIL-STD-202,
28-Jan-15
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUM110P08-11L www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SUM110P08-11L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VS-2EGH02HM3
Abstract: No abstract text available
Text: VS-2EGH02HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • Specific for output and snubber operation • Low forward voltage drop
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VS-2EGH02HM3
J-STD-020,
DO-214AA)
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-2EGH02HM3
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Untitled
Abstract: No abstract text available
Text: V8PAN50-M3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement TMBS SMPATM • Trench MOS Schottky technology • Low power losses, high efficiency
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V8PAN50-M3
J-STD-020,
DO-221BC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SMBJ64A
Abstract: SMBJ12A
Text: VISHAY GENERAL SEMICONDUCTOR www.vishay.com Transient Voltage Suppressors Application Note Using the Power vs. Time Curve By Bruce Hartwig Senior Automotive Applications Engineer How can the maximum transient power and current capability for silicon Transient Voltage Suppressors TVS be
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SMBJ12A
SMBJ64A
28-Jan-14
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827730
Abstract: No abstract text available
Text: T H IS LOG 827 VERWENDET WAR PO LZ NR. 7 30 ZEICHNUNG NEU REVISED PER FÜR C O N TRO LLED DO C UM ENT. DATE DWN APVD ERSTELLT ECO-09-023313 AEG KK HMR 120CT09 ECR-1 0 - 0 2 5 7 7 4 28JAN1 B E S T E LL-N R . P O ^ 5 .0 8 7 .6 2 A D E S C R IP T IO N - L ± 0 .3
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120CT09
28JAN1
ECO-09-023313
827730
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