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    IBM01181651M

    Abstract: IBM0118165B1M IBM0118165M1M IBM0118165P1M ibm 9398
    Text: Discontinued 9/98 - last order; 3/99 last ship IBM01181651M x 1610/10, 5.0V, EDOMMDD59DSU-001014332. IBM0118165P1M x 1610/10, 3.3V, EDO, LP, SRMMDD59DSU-001014332. IBM0118165M1M x 1610/10, 5.0V, EDO, LP, SRMMDD59DSU-001014332. IBM0118165B1M x 1610/10, 3.3V, EDOMMDD59DSU-001014332.


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    PDF IBM01181651M EDOMMDD59DSU-001014332. IBM0118165P1M SRMMDD59DSU-001014332. IBM0118165M1M IBM0118165B1M IBM0118165 IBM0118165M ibm 9398

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    Abstract: No abstract text available
    Text: . IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)


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    PDF IBM0118165 IBM0118165M IBM0118165B IBM0118165P

    IBM01161651M

    Abstract: IBM0116165B1M IBM0116165M1M IBM0116165P1M
    Text: IBM01161651M x 1612/8, 5.0V, EDO. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SR. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SR. IBM0116165B1M x 1612/8, 3.3V, EDO. IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization


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    PDF IBM01161651M IBM0116165P1M IBM0116165M1M IBM0116165B1M IBM0116165 IBM0116165M IBM0116165B IBM0116165P

    Untitled

    Abstract: No abstract text available
    Text: Discontinued 9/98 - last order; 3/99 last ship IBM01161651M x 1612/8, 5.0V, EDOMMDD61DSU-001015031. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165B1M x 1612/8, 3.3V, EDOMMDD61DSU-001015031.


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    PDF IBM01161651M EDOMMDD61DSU-001015031. IBM0116165P1M SRMMDD61DSU-001015031. IBM0116165M1M IBM0116165B1M IBM0116165 IBM0116165M

    Untitled

    Abstract: No abstract text available
    Text: . IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)


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    PDF IBM0118165 IBM0118165M IBM0118165B IBM0118165P

    IBM01161651M

    Abstract: IBM0116165B1M IBM0116165M1M IBM0116165P1M
    Text: IBM01161651M x 1612/8, 5.0V, EDO. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SR. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SR. IBM0116165B1M x 1612/8, 3.3V, EDO. IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization


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    PDF IBM01161651M IBM0116165P1M IBM0116165M1M IBM0116165B1M IBM0116165 IBM0116165M IBM0116165B IBM0116165P

    Untitled

    Abstract: No abstract text available
    Text: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


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    PDF IBM0116165 IBM0116165M IBM0116165B IBM0116165P 115ns 100ns. 200nA

    0118165BJ3

    Abstract: No abstract text available
    Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1 M x 16 1 0 /1 0 E D O D R A M Features • 1,048,576 w ord by 16 bit organization • Low Power D issipation - Active max - 185 mA /1 6 5 mA /1 4 0 mA _ s ta n d b y : TTL Inputs (max) - 1.0 mA • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply


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    PDF IBM0118165 IBM0118165M IBM0118165B IBM0118165P 0118165BJ3

    trw 1014

    Abstract: ibm dram
    Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 wordby 16 bit organization • Low Power Dissipation - Active max - 130 mA /1 0 5 mA . Standby: TTL Inputs (max) - 1.0 mA " Standby: CMOS Inputs (max) - 1 0 mA (SP version)


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    PDF IBM0118165 IBM0118165M IBM0118165B IBM0118165P 200VA SA14-4223-06 IBM0118165B trw 1014 ibm dram

    Untitled

    Abstract: No abstract text available
    Text: IB M 0 1 1 6 1 6 5 IB M 0 1 1 6 1 6 5 M IB M 0 1 1 6 1 6 5 B IB M 0 1 1 6 1 6 5 P 1M x 16 12/8 EDO DRAM Features • • 1 ,0 4 8 ,5 7 6 w ord by 16 bit organization • S ingle 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V pow er supply • S tan dard P o w e r S P and Low P ow er (LP)


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    PDF 400mil; IBM0116165M IBM0116165B IBM0116165P

    Untitled

    Abstract: No abstract text available
    Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1 M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)


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    PDF IBM0118165 IBM0118165M IBM0118165B IBM0118165P 130mA. 165mA 105mA. 200nA

    Untitled

    Abstract: No abstract text available
    Text: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features 1,048,576 word by 16 bit organization Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply Standard Power SP and Low Power (LP) 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


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    PDF IBM0116165 IBM0116165M IBM0116165B IBM0116165P 350ns 350ns) 28H4723 SA14-4225-03

    Untitled

    Abstract: No abstract text available
    Text: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


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    PDF IBM0116165 IBM0116165M IBM0116165B IBM0116165P 350ns 28H4723 SA14-4225-03 1DDL14L 0DD14Ã

    Untitled

    Abstract: No abstract text available
    Text: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


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    PDF IBM0116165 IBM0116165M IBM0116165B IBM0116165P 200jiA 300nA 350jis 350ns) 28H4723 SA14-4225-03