Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM KM68257C/CL Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994
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KM68257C/CL
32Kx8
12/15/20ns
8/10ns
8/10/10ns
004MAX
February-1996
28-TSOP1-0813
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KM68V257CP15
Abstract: KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20
Text: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CMOS) : 100 |iA (Max.) Operating KM68V257C-15 : 90 mA (Max.)
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KM68V257C
32Kx8
KM68V257C-15
KM68V257C-17
KM68V257C-20
KM68V257CP
28-DIP-300
KM68V257CJ
28-SOJ-300
KM68V257C
KM68V257CP15
KM68V257CP-15
KM68V257CJ-15
KM68V257CP-17
KM68V257C-15
KM68V257C-17
KM68V257CJ
KM68V257CJ-17
KM68V257CP20
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KM68257C
Abstract: KM68257C-12 KM68257C-15 KM68257C-20 KM68257CJ
Text: CMOS SRAM KM68257C 32,768 WORD x 8 B it High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : K M68257C-12 : 165mA (max.) K M 68 257 C -15: 150mA (max.)
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KM68257C
KM68257C-12
165mA
KM68257C-15
150mA
KM68257C-20
140mA
KM68257CP
28-DIP-300
KM68257CJ
KM68257C
KM68257C-12
KM68257CJ
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Untitled
Abstract: No abstract text available
Text: KM68257B CMOS SRAM 32K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) 2mA(Max.) Operating KM68257B-15 : 150mA (max.) KM68257B-20: 140mA (max.) KM68257B-25: 130mA (max.)
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KM68257B
KM68257B-15
150mA
KM68257B-20:
140mA
KM68257B-25:
130mA
KM68257BP:
28-DIP-300
KM68257BJ
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KM6865BP-20
Abstract: KM6865BP-15
Text: KM6865B CMOS SRAM 8 K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12 ,15, 20,25ns Max. The KM865B is a 65,536-bit high-speed Static Random • Low Power D issipation Access Memory organized as 8,192 words by 8 bits.
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KM6865B
KM865B
536-bit
KM6865B-12
KM6865B-15
KM6865B-25
KM6865BP-20
KM6865BP-15
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Untitled
Abstract: No abstract text available
Text: KM64V258C CMOS SRAM 65,536 WORDx4 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 25, 35ns(Max.) • Low Power Dissipation Standby (TTL) : 30mA (max) (CMOS) : 100/i A (max) Operating : KM64V258C-15 : 80mA (max)
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KM64V258C
100/i
KM64V258C-15
KM64V258C-17
KM64V258C-20
KM64V258CP
28-DIP-300
KM64V258CJ
28-SQJ-300
KM64V258C
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28-TSOP1
Abstract: No abstract text available
Text: KM62256CL/CL-L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 55,70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 10pW(Typ.) L-Version 5/jW(Typ.) LL-Version Operating : 35mW/1 MHz(Max.) • Single 5 V ± 10% power supply
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KM62256CL/CL-L
100ns
35mW/1
KM62256CLP/CLP-L
28-DIP-600B
KM62256CLG/CLG-L
28-SOP-450
KM62256CLS/CLS-L
28-DIP-300
KM62256CLTG/CLTG-L
28-TSOP1
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7414 fast
Abstract: pin diagram of 7414 KM68257CJ TTL 7414 data KM68257CP-15 KM68257C KM68257C-12 KM68257C-15 KM68257C-20 KM68257CP-20
Text: CMOS SRAM KM68257C 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12, 15, 20 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM68257C-12 : 165 mA (Max.) KM 68257C-15 : 1 5 0 m A (Max.)
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KM68257C
32Kx8
KM68257C-12
KM68257C-15
150mA
KM68257C-20
KM68257CP
28-DIP-300
KM68257CJ
28-SQJ-300
7414 fast
pin diagram of 7414
KM68257CJ
TTL 7414 data
KM68257CP-15
KM68257C
KM68257C-12
KM68257C-15
KM68257C-20
KM68257CP-20
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM68V257 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20,25 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CMOS) : 100 uA (Max.) Operating KM68V257-15 :110 mA (Max.)
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KM68V257
32Kx8
KM68V257-15
KM68V257-17
KM68V257-20
KM68V257-25
KM68V257P
28-DIP-300
KM68V257J
28-SQJ-300
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KM622568
Abstract: KM62256B
Text: KM62256BL/KM62256BL-L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 70, 85, 100, 120ns Max. • Low Pow er D issipatio n S tandby (CMOS): 10/xW (Typ.) L-Version 5/iW (Typ.) LL-Version O perating : 35m W /1M H z (Max.)
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KM62256BL/KM62256BL-L
120ns
10/xW
62256B
28-DIP-600B
KM622S6BLG/BLG
28-SOP-450
KM62256BLS/BLS-L
28-DIP-300
KM62256BLTG/BLTG-L
KM622568
KM62256B
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Untitled
Abstract: No abstract text available
Text: KM68257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Aoeess Time 12,15,20 ns- Max.f • Low Power Dissipation Standby (TTL : 40 mA (Max.) (CMOS): 2 mA (Max.) 100|iA(Max.)- L-Ver. Operating KM68257C/CL-t2 : 165mA (Max.)
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KM68257C
32Kx8
KM68257C/CL-t2
165mA
KM68257C/CL-15
KM68257C/CL-20
KM682S7CP/CLP
28-DIP-300
KM68257CJ/CLJ
J-300
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KM62256BUKM62256BL-L
Abstract: KM62256BLG KM62256BL KM62256BLP
Text: CMOS SRAM KM62256BUKM62256BL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns Max. • Low Power Dissipation Standby (CMOS): 10MW (Typ.) L-Version 5/iW (Typ.) LL-Version Operating : 35mW/1MHz (Max.)
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KM62256BUKM62256BL-L
120ns
35mW/1MHz
KM62256BLP/BLP-L
28-DIP-600B
KM62256BLG/BLG-L
28-SOP-450
KM62256BLS/BLS-L
28-DIP-300
KM62256BLTG/BLTG
KM62256BUKM62256BL-L
KM62256BLG
KM62256BL
KM62256BLP
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KM68257Bp-20
Abstract: KM68257BJ-20 KM68257BP-15
Text: CMOS SRAM KM68257B 3 2 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) 2mA(Max.) Operating KM68257B-15: 150mA (max.) KM68257B-20: 140mA (max.)
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KM68257B
KM68257B-15:
150mA
KM68257B-20:
140mA
KM68257B-25:
130mA
KM68257BP
28-DIP-300
KM68257BJ
KM68257Bp-20
KM68257BJ-20
KM68257BP-15
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KM68V257C
Abstract: KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CP 28-DIP-300
Text: KM68V257C CM O S SRAM 32,768 WORDx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 15,17, 20ns(Max.) • Low Power Dissipation Standby (TTL) : 30mA (max) (CMOS) : 100/j A (max) Operating : KM68V257C-15 : 90mA (max.)
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KM68V257C
20ris
100/jA
KM68V257C-15
KM68V257C-17
KM68V257C-20
KM68V257CP
28-DIP-300
KM68V257CJ
KM68V257C
KM68V257C-15
KM68V257C-17
KM68V257CJ
KM68V257CP
28-DIP-300
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Untitled
Abstract: No abstract text available
Text: KM68V257C CMOS SRAM 32,768 WORDx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 15,17, 20ns(Max.) • Low Power Dissipation Standby (TTL) : 30mA (max) (CMOS) : 1 0 0 / i A (max) Operating : KM68V257C-15 : 90mA (max.)
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KM68V257C
KM68V257C-15
KM68V257C-17:
KM68V257C-20
KM68V257CP
28-DIP-300
KM68V257CJ
KM68V257C
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KM68257CP-15
Abstract: No abstract text available
Text: CMOS SRAM KM68257C 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12, 15, 20 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM68257C-12:165 mA (Max.) KM68257C-15 : 150 mA (Max.)
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KM68257C
32Kx8
KM68257C-12
KM68257C-15
KM68257C-20
KM68257CP
28-DIP-300
KM68257CJ
28-SQJ-300
KM68257C
KM68257CP-15
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Untitled
Abstract: No abstract text available
Text: KM64258C CMOS SRAM 64Kx4 Bit With UE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 :150 mA (Max.) KM64258C-15 : 140 mA (Max.)
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KM64258C
64Kx4
KM64258C-12
KM64258C-15
KM64258C-20
KM64258CP
28-DIP-300
KM64258CJ
28-SOJ-3QO
KM64258C
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KM6264BL-10L
Abstract: 6264bl km6264 6264 SRAM
Text: KM6264BÜKM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :10,«W (typ) LVersion : W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply
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KM6264BÃ
KM6264BL-L
120ns
55mW/1
KM6264BLP/BLP-L
28-DIP-600B
KM6264BLS/BLS-L
28-DIP-300
KM6264BLG/BLG-L
KM6264BLVBL-L
KM6264BL-10L
6264bl
km6264
6264 SRAM
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Untitled
Abstract: No abstract text available
Text: KM68257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12, 15, 20 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 m A (Max.) 100 |iA(M ax.) - L- Ver. Operating KM 68257C/CL-12 : 165 mA (Max.)
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KM68257C
32Kx8
68257C/CL-12
68257C/CL-15
68257C/CL-20
KM68257CP/CLP
28-DIP-300
KM68257CJ/CLJ
28-SOJ-300
KM68257CTG/CLTG
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KM68V257P-17
Abstract: KM68V257 KM68V257P-15 KM68V257J-15 KM68V257P-20 km68v257j
Text: CMOS SRAM KM68V257 3 2 K X 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 15,17, 20, 25ns (Max.) • Low Power Dissipation Standby fTTL) : 30mA (MaX.) (CMOS) : 100« A (Max.) Operating : KM68V257 -1 5 : 1 10mA (Max.)
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KM68V257
KM68V257
100mA
KM68V257P
28-DIP-300
KM68V257J
28-SOJ-300
KM68V257P-17
KM68V257P-15
KM68V257J-15
KM68V257P-20
km68v257j
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A1526
Abstract: No abstract text available
Text: CMOS SRAM KM64V258C 65,536 WORDx4 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 2 5 ,35ns(Max.) • Low Power Dissipation Standby fTTL) : 30mA (max) The KM64V258C is a 262,144 bit high-speed Static
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KM64V258C
KM64V258C
A1526
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28DIP300
Abstract: 24-DIP-300 28-DIP-300 J400 32-TS0P1-0814F 28-SOJ-300 28-DIP-600B
Text: P A C K A G E DIMENSIONS Unit : mm/inch 24-DIP-300 485 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-300 486 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-600B 487 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 32-DIP-600 488 ELECTRONICS
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24-DIP-300
28-DIP-300
28-DIP-600B
32-DIP-600
32-S0P-525
32-TS0P1-0814F
32-TSOP1-0814R
32-TSOP1-0820F
32-TSOP1-0820R
10MAX
28DIP300
24-DIP-300
28-DIP-300
J400
32-TS0P1-0814F
28-SOJ-300
28-DIP-600B
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28DIP300
Abstract: KM68V257CP
Text: CMOS SRAM KM68V257C 32,768 WORDx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 15,17, 20ns(Max.) • Low Power Dissipation Standby (TTL) : 30mA (max) (CMOS) : 100« A (max) Operating : KM68V257C-15 : 90mA (max.)
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KM68V257C
KM68V257C-15
KM68V257C-17
KM68V257C-20:
KM68V257CP
28-DIP-300
KM68V257CJ
28-DIP-300
KM68V257C
28DIP300
KM68V257CP
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KM6865B-20
Abstract: No abstract text available
Text: CMOS SRAM KM6865B 8,192 WORD x 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6865B-12 :140mA (max.) KM6865B-15 :130mA (max.)
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KM6865B
KM6865B-12
140mA
KM6865B-15
130mA
KM6865B-20
120mA
KM6865B-25
110mA
KM6865BP
KM6865B-20
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