Untitled
Abstract: No abstract text available
Text: c1 Obsolete C1 ECR-13-014907 KKB 28APR14
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ECR-13-014907
28APR14
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MS21340-04
Abstract: torque ms21340 21FW-R1 FED-STD-H28 MS21340 MS21340 NUT RL30-H131-30 ptc 831
Text: FO-52847-F 1 2 3 4 5 6 7 8 9 J 10 REV A B C DOCUMENT 0014471 0016113 0018560 D 0076914 CHANGED BY JM/AP 29JUL05 JM/AP 19OCT05 JM/AP 19JAN06 BM 28APR11 CHECK PH/AP PH/AP PH/AP DSK J .831 MAX 5 1 OPERATING CHARACTERISTICS .625 I ELECTRICAL SPECIFICATIONS OPERATE MAGNETIC FLUX DENSITY: 250 GAUSS MAX.
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FO-52847-F
29JUL05
19OCT05
19JAN06
28APR11
21FW-R1
5M-1994
MS21340-04
torque ms21340
FED-STD-H28
MS21340
MS21340 NUT
RL30-H131-30
ptc 831
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MS21340-04
Abstract: MS21340 NUT JSFY10A22WR3N24 MS21340 RL30-H131-30 RL30-H111-30 21FW-74 FED-STD-H28 ptc 831
Text: FO-52847-F 1 2 J 3 4 5 6 7 8 9 REV A B C D .831 MAX 10 DOCUMENT 0014471 0016113 0018560 0076914 CHANGED BY JM/AP 29JUL05 JM/AP 19OCT05 JM/AP 19JAN06 BM 28APR11 CHECK PH/AP PH/AP PH/AP DSK J 5 .625 1 OPERATING CHARACTERISTICS I ELECTRICAL SPECIFICATIONS OPERATE MAGNETIC FLUX DENSITY: 250 GAUSS MAX.
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FO-52847-F
29JUL05
19OCT05
19JAN06
28APR11
14JUL05
5M-1994
21FW-74
MS21340-04
MS21340 NUT
JSFY10A22WR3N24
MS21340
RL30-H131-30
RL30-H111-30
21FW-74
FED-STD-H28
ptc 831
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Untitled
Abstract: No abstract text available
Text: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)
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SiS407ADN
SiS407ADN-T1-GE3electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
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J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: MUR440, MUR460 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability
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MUR440,
MUR460
DO-201AD
22-B106
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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UH1B
Abstract: No abstract text available
Text: UH1B, UH1C, UH1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Oxide planar chip junction • Ultrafast recovery times for high frequency • Meets MSL level 1, per J-STD-020,
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J-STD-020,
AEC-Q101
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
UH1B
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Untitled
Abstract: No abstract text available
Text: 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology
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3KASMC10A
3KASMC43A
J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiP32451, SiP32452, SiP32453 Vishay Siliconix 0.9 V to 2.5 V, 55 m Load Switch in WCSP4 DESCRIPTION FEATURES SiP32451, SiP32452 and SiP32453 are n-channel integrated high side load switches that operate from 0.9 V to 2.5 V input voltage range. SiP32451, SiP32452 and SiP32453 have low input logic
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SiP32451
SiP32452
SiP32453
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630D
Abstract: No abstract text available
Text: 630D Vishay Sprague Aluminum Capacitors + 125 °C, Miniature, Axial Lead FEATURES • Extended temperature range • Economical Fig.1 Component outline • High reliability design • Low DCL option QUICK REFERENCE DATA DESCRIPTION • For timing circuit applications
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18-Jul-08
630D
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Untitled
Abstract: No abstract text available
Text: 630D Vishay Sprague Aluminum Capacitors + 125 °C, Miniature, Axial Lead FEATURES • Extended temperature range • Economical Fig.1 Component outline • High reliability design • Low DCL option QUICK REFERENCE DATA DESCRIPTION • For timing circuit applications
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11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-15ETH03PbF Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES Base cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 1 Cathode TO-220AC • Compliant to RoHS Directive 2002/95/EC
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VS-15ETH03PbF
2002/95/EC
O-220AC
O-220AC
11-Mar-11
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VS-30ETH06PBF
Abstract: No abstract text available
Text: VS-30ETH06PbF Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base cathode 2 • Reduced Qrr and soft recovery • 175 °C TJ maximum • For PFC CRM/CCM operation • Low forward voltage drop • Low leakage current 1 Cathode TO-220AC 3
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VS-30ETH06PbF
O-220AC
2002/95/EC
O-220AC
11-Mar-11
VS-30ETH06PBF
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Untitled
Abstract: No abstract text available
Text: VS-8ETH06PbF, VS-8ETH06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AC • Low leakage current TO-220 FULL-PAK • Fully isolated package VINS = 2500 VRMS
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VS-8ETH06PbF,
VS-8ETH06FPPbF
O-220AC
O-220
E78996
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-8ETX06PbF, VS-8ETX06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK TO-220AC • Low leakage current
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VS-8ETX06PbF,
VS-8ETX06FPPbF
O-220AC
O-220
E78996
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-8ETX06PbF, VS-8ETX06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK TO-220AC • Low leakage current
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VS-8ETX06PbF,
VS-8ETX06FPPbF
O-220AC
O-220
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-MUR2020CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 10 A FRED Pt FEATURES Base common cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current TO-220AB • Compliant to RoHS Directive 2002/95/EC
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VS-MUR2020CTPbF
2002/95/EC
O-220AB
VS-MUR2020CTPbF
O-220AB
11-Mar-11
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ASA-GF30
Abstract: PBT ASA-GF30 PBT -ASA-GF30 4114435 zfw 03
Text: —U N P " R I I . S H F n COPYRIGHT RELEASED BY AL L FOR PUBLICATION RIGHTS 2004 LOC RE V I S I O N S D I ST AI RESERVED. 7 x 5 PROJEOT-NO A89-52101 C O D I N G A1 = 35±0.15 LTR F3 DE SC R I P T ION DATE R E V IS E D P E R E C O -1 1-005150 28APR11 D WN
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A89-52101
28APR11
16P0S.
ASA-GF30
PBT ASA-GF30
PBT -ASA-GF30
4114435
zfw 03
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Untitled
Abstract: No abstract text available
Text: LOC RE V I S I O N S D I ST CÛ LU p LTR A1 17.5 DESCRIPTION DWN DATE 28APR11 R E V IS E D P E R E C O -1 1-005150 RK APVD HMR 25.0 10.0 in rn >0 if MIOxO.75 2.4 3.2 1.5 9.0 RoHS Compliant FOR FURTHER INFORMATION SEE DATA SHEET FOR SERIES TW - W IRE WOUND SPINDLE OPERATED POTENTIOMETER
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28APR11
JAN-09
08-JAN-09
08-JAN-09
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163007-1
Abstract: 163007-5
Text: TH I S D R A W I NG IS COPYRIGHT U N PU B LI SHED. - RELEASED FOR ALL BY PUBLICATION RIGHTS LOC D I ST RE V I S I ONS RESERVED. LTR D1 DIMENSIONS a— IN DESCRIPTION REVISED PER ECO-11-005294 DATE DWN APVD 28APR11 RK HMR mm 16,8 — e IL 1 s T 9. I •■
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ECO-11-005294
28APR11
I4AUG07
4AUG07
I4AUG07
163007-1
163007-5
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Junior-Power
Abstract: No abstract text available
Text: TH I S C DRAW ING IS COPYRIGHT UNPUBLI SHED. RELEASED BY FOR ALL PUBLICATION RIGHTS 2006 LOC RESERVED. REV I S I ONS D I ST A A3 around c DESCR I PTION LTR R E V IS E D P E R E C O -1 1-005150 DATE D WN APVD 28APR11 RK HMR 1.5 c 1 1 1 73.4 1 1 3 UD 3 928 554-6
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ECO-11-005150
28APR11
13MAR1986
25AUG2006
S-828657
Junior-Power
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PA66-GF35
Abstract: pbt-gf30 PA66GF35 PBT-GF-30 PBTGF-30 PBTGF30 967067-1 967056-1 11703498
Text: 8 THIS C DR AWI NG IS UNPUBLISHED. RELEASED FOR ALL COPYRIGHT 2007 PUBLICATION RIGHTS DIST LOC RESERVED. REV I S I O N S A LTR C3 SHOWN CODINGS 11703498-1 2:1 - SHOWN DWN APVD RK HMR DATE R EV ISE D P ER ECO-11-005150 28APR11 SHOWN CODINGS 11703498-3 2:1 1 1703498-2
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ECO-11-005150
28APR11
2-1670ll-Nr.
19JUN2007
JUN2007
PA66-GF35
pbt-gf30
PA66GF35
PBT-GF-30
PBTGF-30
PBTGF30
967067-1
967056-1
11703498
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338068-8
Abstract: 338068-0
Text: T H 10 PBAWt WO I S UNPUOLt OHEO. COPYRIGHT - RELEASED BY F OR ALL PUBLICATION RIGHTS L OC D I ST REV I S IONS RESERVED. LTR E1 REFERENCE MATING INTERFACE ,27 STAGGERED PITCH x 1,5 DATE DWN APVD 28APR11 RK HMR DESCRIPTION REVISED PER ECO-11-005294 PATTERN
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ECO-11-005294
338068-8
338068-0
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG C IS UNPUBLI SHED. RELEASED ALL BY COPYRIGHT FOR PUBLICATION RIGHTS 20 0 0 L OG R E V I S IO NS D I ST GW RESERVED. C1 1 SEE S H E E T 2 FOR M O D U L A R J A C K ô P O S . / 4 C O N T A C T S 2 FOR A P P L I C A T I O N 3 T O L E R A N C E S ONL ES S O T H E R W I S E
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28APR11
FEB05
S-1705950
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