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    28F020 Search Results

    28F020 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy
    MD28F020-12/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    MD28F020-90/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    TN28F020-90 Rochester Electronics LLC Flash, 256KX8, 90ns, PQCC32, 0.450 X 0.550 INCH, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    MD28F020-90/B Rochester Electronics LLC Replacement for Intel part number MD28F020-90. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
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    28F020 Price and Stock

    onsemi CAT28F020L90

    IC FLASH 2MBIT PARALLEL 32DIP
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    onsemi CAT28F020G90

    IC FLASH 2MBIT PARALLEL 32PLCC
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    onsemi CAT28F020G12

    IC FLASH 2MBIT PARALLEL 32PLCC
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    onsemi CAT28F020L12

    IC FLASH 2MBIT PARALLEL 32DIP
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    onsemi CAT28F020HI12

    IC FLASH 2MBIT PARALLEL 32TSOP
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    Rochester Electronics CAT28F020HI12 2,037 1
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    Find more 28F020 price and stock on Findchips.com

    28F020 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28F020 Intel 2048K (256K x 8) CMOS FLASH MEMORY Original PDF
    28F020 Intel 2048K (256K x 8) CMOS FLASH MEMORY Original PDF
    28F020 Intel 2048K (256K x 8) FLASH MEMORY Original PDF
    28F020 Intel 2048K (256K x 8) CMOS Flash Memory Scan PDF
    28F020 Intel 2048K CMOS Flash Memory Scan PDF
    28F020 Intel 2048K (256K x 8) CMOS Flash Memory Scan PDF
    28F020 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F020 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F020 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    28F020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    intel 28F256

    Abstract: intel 28F256 flash 28F256 a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16
    Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming T S O P 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 01h v Socket : IC191-0322-001 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020


    Original     		PDF IC191-0322-001 28F256A, 28F256 28F512, 28F010, 28F020 32-LEAD intel 28F256 intel 28F256 flash a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16

    intel 80c186

    Abstract: F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read


    Original     		PDF 28F020 2048K 32-Pin 32-Lead ER-28 AP-316 AP-325 ER-20 -80V05 intel 80c186 F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020

    29F020

    Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
    Text: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program


    Original     		PDF 28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010

    a6628

    Abstract: intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 28F256
    Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming P L C C 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 0Bh v Socket : IC51-0324-453 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020


    Original     		PDF IC51-0324-453 28F256A, 28F256 28F512, 28F010, 28F020 a6628 intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020

    B1560

    Abstract: B1560 equivalent 28f020 transistor B1560 294005 B1205 b1770 b439 AP-316 AP-325
    Text: 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Y Flash Electrical Chip Erase 2 Second Typical Chip Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte Program 4 Second Chip Program Y 100K Erase Program Cycles Typical Y 12 0V g 5% VPP


    Original     		PDF 28F020 2048K 8F020 X28F020-90 ER-20 ER-24 RR-60 AP-316 B1560 B1560 equivalent transistor B1560 294005 B1205 b1770 b439 AP-325

    transistor a13

    Abstract: transistor A16 28F010 28F020 TSOP32 IC191 A1727 A1221
    Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming TSOP32 -2.HSP SOCKET BOARD REVERSE PINOUT OF TSOP32.HSP v Date : 1998/11/25 v Board ID : 17h v Socket : IC191-0322-001 (YAMAICHI) v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F010, 28F020


    Original     		PDF TSOP32 IC191-0322-001 28F010, 28F020 32-LEAD transistor a13 transistor A16 28F010 28F020 IC191 A1727 A1221

    TN28F020-150

    Abstract: 28F020 80C186 intel 28F020
    Text: E n n n n n n n 28F020 2048K 256K X 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase  2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µS Typical Byte-Program  4 second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% VPP


    Original     		PDF 28F020 2048K 32-Lead E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28F020-150 N28F020-150 TN28F020-150 80C186 intel 28F020

    28F002-T

    Abstract: No abstract text available
    Text: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package


    Original     		PDF 28F200-T 28F200-B 28F002-T 28F002-B 28F020 MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P 28F002-T

    IN6AG

    Abstract: 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		PDF 28F020 2048K AP-316 AP-325 -80V05, -80V05 28F020 4a2bl75 Qlbb077

    Untitled

    Abstract: No abstract text available
    Text: ££ Cost E ffective Solution fo r the 2 MB F lash C A T 2 8 F0 1 5 < = ^ T ^ L _ Y S - r L icen sed In tel second source 1.5 Megabit CMOS Flash Memory FEATURES • Fully Compatible to 2 MB Flash 28F020 - No hardware or software changes Stop Tim er for Program/Erase


    OCR Scan     		PDF 28F020) 32-pin 24-40-LEAD M0-015

    SSC16E

    Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program


    OCR Scan     		PDF 28F020 2048K 28F020 32-PIN 32-LEAD P28F020-150 N28F020-150 P28F020-200 SSC16E N28F020-200 28F020-150 29024 intel 28F020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 296052 F la s h L ite W o rd w id e M e m o ry C a r d — In te l 2 8 F 0 2 0 NOV 95 REV A Product Features • Thin Profile— PCMCIA Type I Package, 3.3 mm Thick ■ Memory Capacity of 512 KBytes based on Intel 28F020 Flash Technology ■ 150 ns Access Time


    OCR Scan     		PDF 28F020

    intel eprom Intelligent algorithm

    Abstract: 28F020 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020
    Text: int ! 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jlls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP High-Performance Read


    OCR Scan     		PDF 28F020 2048K 28F020 AP-316 AP-325 -80V05, -80V05 intel eprom Intelligent algorithm 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020

    28f020-150

    Abstract: 28F020-200 intel 28F020
    Text: in te i, 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Qulck-Pulse P r o g r a m m in g T M Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles Typical


    OCR Scan     		PDF 28F020 2048K TE28F020-150 TF28F020-150 TE28F020-90 TF28F020-90 ER-20, ER-24, ER-28, RR-60, 28f020-150 28F020-200 intel 28F020

    P28F020-150

    Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F020 2048K ER-20, ER-24, ER-28, RR-60, AP-316, AP-325 -80V05, -80V05 P28F020-150 28F020 80C186 E28F020 F28F020 intel 28F020

    Untitled

    Abstract: No abstract text available
    Text: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for


    OCR Scan     		PDF 28F020 2048K AP-325 -80V05, -80V05 28F020

    n28f020-150

    Abstract: No abstract text available
    Text: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read


    OCR Scan     		PDF 28F020 2048K -80V05, -80V05 n28f020-150

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		PDF 28F020 2048K 32-Lead E28F020-90 E28F020-120 E28F020-150 TE28F020-90 TE28F020-120 TE28F020-150

    29F020

    Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface


    OCR Scan     		PDF 28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020

    2046K

    Abstract: 28F020 SmartDie 29024
    Text: in t e * 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 /xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325, 2046K SmartDie 29024

    Untitled

    Abstract: No abstract text available
    Text: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash E lectrical C h ip-E rase — 2 S ec o n d T yp ic al C h ip -E rase ■ Q uick-P ulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 4 S ec o n d C h ip -P ro g ram ■


    OCR Scan     		PDF 28F020 2048K 32-Pin -80V05, -80V05

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% Vpp ■ High-Performance Read


    OCR Scan     		PDF 28F020 2048K 32-Pin 32-Lead

    i80C186

    Abstract: M28F020 29024
    Text: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F020 2048K 32-Pin 32-Lead -32-Lead -80V05, -80V05 AP-325 i80C186 M28F020 29024