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Rochester Electronics LLC


Rochester Electronics LLC MD28F020-90-R MD28F020-90/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MD28F020-90-R	Bulk	4,873		2	1 - 10 $209.23 100 $209.23 1000 $209.23 10000 $209.23	Buy Now
Rochester Electronics LLC MD28F020-90 FLASH, 256KX8, 90NS, CDIP32
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MD28F020-90	Bulk	807		2	1 - 10 $245.99 100 $245.99 1000 $245.99 10000 $245.99	Buy Now
Rochester Electronics	MD28F020-90		807		1	1 $203.2 10 $203.2 100 $191.01 1000 $178.82 10000 $178.82	Buy Now
Rochester Electronics LLC MD28F020-90-B 256K X 8 ETOX FLASH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MD28F020-90-B	Bulk	523		1	1 $340.22 10 $340.22 100 $340.22 1000 $340.22 10000 $340.22	Buy Now
Rochester Electronics LLC TN28F020-90 FLASH, 256KX8, 90NS, PQCC32
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TN28F020-90	Bulk	501		8	1 - 10 $42.05 100 $42.05 1000 $42.05 10000 $42.05	Buy Now
Rochester Electronics	TN28F020-90		501		1	1 - 10 - 100 $36.3 1000 $32.48 10000 $30.57	Buy Now
Rochester Electronics LLC TN28F020-150 EEPROM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TN28F020-150	Bulk	398		8	1 - 10 $38.73 100 $38.73 1000 $38.73 10000 $38.73	Buy Now
Rochester Electronics	TN28F020-150		398		1	1 - 10 - 100 $33.43 1000 $29.91 10000 $28.15	Buy Now

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28F020 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
28F020	Intel	2048K (256K x 8) CMOS FLASH MEMORY	Original	PDF
28F020	Intel	2048K (256K x 8) CMOS FLASH MEMORY	Original	PDF
28F020	Intel	2048K (256K x 8) FLASH MEMORY	Original	PDF
28F020	Intel	2048K (256K x 8) CMOS Flash Memory	Scan	PDF
28F020	Intel	2048K CMOS Flash Memory	Scan	PDF
28F020	Intel	2048K (256K x 8) CMOS Flash Memory	Scan	PDF
28F020	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
28F020	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
28F020	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

28F020 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IN6AG Abstract: 28F020 intel 28F020 Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp	OCR Scan	28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020	PDF
Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read	OCR Scan	28F020 2048K AP-316 AP-325 -80V05, -80V05 28F020 4a2bl75 Qlbb077	PDF
Contextual Info: ££ Cost E ffective Solution fo r the 2 MB F lash C A T 2 8 F0 1 5 < = ^ T ^ L _ Y S - r L icen sed In tel second source 1.5 Megabit CMOS Flash Memory FEATURES • Fully Compatible to 2 MB Flash 28F020 - No hardware or software changes Stop Tim er for Program/Erase	OCR Scan	28F020) 32-pin 24-40-LEAD M0-015	PDF
intel 28F256 Abstract: intel 28F256 flash 28F256 a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16 Contextual Info: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming T S O P 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 01h v Socket : IC191-0322-001 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020	Original	IC191-0322-001 28F256A, 28F256 28F512, 28F010, 28F020 32-LEAD intel 28F256 intel 28F256 flash a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16	PDF
SSC16E Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020 Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program	OCR Scan	28F020 2048K 28F020 32-PIN 32-LEAD P28F020-150 N28F020-150 P28F020-200 SSC16E N28F020-200 28F020-150 29024 intel 28F020	PDF
Contextual Info: Data Sheet 296052 F la s h L ite W o rd w id e M e m o ry C a r d — In te l 2 8 F 0 2 0 NOV 95 REV A Product Features • Thin Profile— PCMCIA Type I Package, 3.3 mm Thick ■ Memory Capacity of 512 KBytes based on Intel 28F020 Flash Technology ■ 150 ns Access Time	OCR Scan	28F020	PDF
intel 80c186 Abstract: F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020 Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read	Original	28F020 2048K 32-Pin 32-Lead ER-28 AP-316 AP-325 ER-20 -80V05 intel 80c186 F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020	PDF
intel eprom Intelligent algorithm Abstract: 28F020 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020 Contextual Info: int ! 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jlls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP High-Performance Read	OCR Scan	28F020 2048K 28F020 AP-316 AP-325 -80V05, -80V05 intel eprom Intelligent algorithm 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020	PDF
PPH 2222 36 Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010 Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface	OCR Scan	28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N	PDF
29F020 Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010 Contextual Info: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program	Original	28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010	PDF
a6628 Abstract: intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 28F256 Contextual Info: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming P L C C 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 0Bh v Socket : IC51-0324-453 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020	Original	IC51-0324-453 28F256A, 28F256 28F512, 28F010, 28F020 a6628 intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020	PDF
28f020-150 Abstract: 28F020-200 intel 28F020 Contextual Info: in te i, 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Qulck-Pulse P r o g r a m m in g T M Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles Typical	OCR Scan	28F020 2048K TE28F020-150 TF28F020-150 TE28F020-90 TF28F020-90 ER-20, ER-24, ER-28, RR-60, 28f020-150 28F020-200 intel 28F020	PDF
P28F020-150 Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020 Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp	OCR Scan	28F020 2048K ER-20, ER-24, ER-28, RR-60, AP-316, AP-325 -80V05, -80V05 P28F020-150 28F020 80C186 E28F020 F28F020 intel 28F020	PDF
Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for	OCR Scan	28F020 2048K AP-325 -80V05, -80V05 28F020	PDF

Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp	OCR Scan	28F020 2048K 32-Lead E28F020-90 E28F020-120 E28F020-150 TE28F020-90 TE28F020-120 TE28F020-150	PDF
B1560 Abstract: B1560 equivalent 28f020 transistor B1560 294005 B1205 b1770 b439 AP-316 AP-325 Contextual Info: 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Y Flash Electrical Chip Erase 2 Second Typical Chip Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte Program 4 Second Chip Program Y 100K Erase Program Cycles Typical Y 12 0V g 5% VPP	Original	28F020 2048K 8F020 X28F020-90 ER-20 ER-24 RR-60 AP-316 B1560 B1560 equivalent transistor B1560 294005 B1205 b1770 b439 AP-325	PDF
29F020 Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020 Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface	OCR Scan	28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020	PDF
2046K Abstract: 28F020 SmartDie 29024 Contextual Info: in t e * 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 /xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical	OCR Scan	28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325, 2046K SmartDie 29024	PDF
Contextual Info: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash E lectrical C h ip-E rase — 2 S ec o n d T yp ic al C h ip -E rase ■ Q uick-P ulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 4 S ec o n d C h ip -P ro g ram ■	OCR Scan	28F020 2048K 32-Pin -80V05, -80V05	PDF
transistor a13 Abstract: transistor A16 28F010 28F020 TSOP32 IC191 A1727 A1221 Contextual Info: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming TSOP32 -2.HSP SOCKET BOARD REVERSE PINOUT OF TSOP32.HSP v Date : 1998/11/25 v Board ID : 17h v Socket : IC191-0322-001 (YAMAICHI) v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F010, 28F020	Original	TSOP32 IC191-0322-001 28F010, 28F020 32-LEAD transistor a13 transistor A16 28F010 28F020 IC191 A1727 A1221	PDF
Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% Vpp ■ High-Performance Read	OCR Scan	28F020 2048K 32-Pin 32-Lead	PDF
TN28F020-150 Abstract: 28F020 80C186 intel 28F020 Contextual Info: E n n n n n n n 28F020 2048K 256K X 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase  2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µS Typical Byte-Program  4 second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% VPP	Original	28F020 2048K 32-Lead E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28F020-150 N28F020-150 TN28F020-150 80C186 intel 28F020	PDF
28F002-T Contextual Info: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package	Original	28F200-T 28F200-B 28F002-T 28F002-B 28F020 MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P 28F002-T	PDF
i80C186 Abstract: M28F020 29024 Contextual Info: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp	OCR Scan	28F020 2048K 32-Pin 32-Lead -32-Lead -80V05, -80V05 AP-325 i80C186 M28F020 29024	PDF

28F020 Search Results

28F020 Price and Stock

Rochester Electronics LLC MD28F020-90-R

Rochester Electronics LLC MD28F020-90

Rochester Electronics LLC MD28F020-90-B

Rochester Electronics LLC TN28F020-90

Rochester Electronics LLC TN28F020-150

28F020 Datasheets (9)

28F020 Datasheets Context Search

IN6AG

intel 28F256

SSC16E

intel 80c186

intel eprom Intelligent algorithm

PPH 2222 36

29F020

a6628

28f020-150

P28F020-150

B1560

29F020

2046K

transistor a13

TN28F020-150

28F002-T

i80C186

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