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    28C64A Search Results

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    28C64A Price and Stock

    Rochester Electronics LLC 28C64A-25B/UC

    IC EEPROM 64KBIT PARALLEL
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    DigiKey 28C64A-25B/UC Bulk 16
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    Rochester Electronics LLC 28C64A-20B/UC

    IC EEPROM 64KBIT PARALLEL
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    DigiKey 28C64A-20B/UC Bulk 15
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    Rochester Electronics LLC 28C64A-25B/YA

    IC EEPROM 64KBIT PARALLEL
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    DigiKey 28C64A-25B/YA Bulk 16
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    Rochester Electronics LLC 28C64AX-15B/UC

    IC EEPROM 64KBIT PARALLEL
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    DigiKey 28C64AX-15B/UC Bulk 14
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    Rochester Electronics LLC 28C64AX-20B/XA

    IC EEPROM 64KBIT PARALLEL
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    DigiKey 28C64AX-20B/XA Bulk 16
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    Find more 28C64A price and stock on Findchips.com

    28C64A Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    28C64A Microchip Technology 64K (8Kx8) CMOS EPROM Original PDF
    28C64A Microchip Technology 64K (8K x 8) CMOS EEPROM Original PDF
    28C64A Microchip Technology 64K (8K x 8) CMOS EEPROM Original PDF
    28C64A Microchip Technology 64K (8K x 8) CMOS EEPROM Original PDF
    28C64A Turbo IC High Speed CMOS 64K EEPROM Original PDF
    28C64A Microchip Technology 64K CMOS EEPROM Scan PDF
    28C64A-15 Microchip Technology 64K (8K x 8) CMOS EEPROM Original PDF
    28C64A-15B/UA Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/UB Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/UC Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15/BUC Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/WX Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/XA Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15/BXA Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/XB Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/XC Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/XX Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/ZX Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15I/J Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15I/K Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    ...

    28C64A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200B

    Abstract: 28C64A 28C64A-15 28C64A-20 28C64A-25 DK-2750 RG41
    Text: 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3


    Original     		PDF 28C64A Time--150 Time--200 200B 28C64A 28C64A-15 28C64A-20 28C64A-25 DK-2750 RG41

    28C64A

    Abstract: 28C64A-15 28C64A-20 28C64A-25
    Text: Obsolete Device 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13


    Original     		PDF 28C64A Time--150 Time--200 yea35-882 D-85737 NL-5152 28C64A 28C64A-15 28C64A-20 28C64A-25

    Untitled

    Abstract: No abstract text available
    Text: 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3


    Original     		PDF 28C64A Time--150 Time--200 28-pin 32-pin DS11125I-page

    28C64AP

    Abstract: 28C64A 28C64APC-2 hex55 ROM 8K x 8
    Text: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times


    Original     		PDF 28C64A 28C64AP 28C64A 28C64APC-2 hex55 ROM 8K x 8

    28C64A-15

    Abstract: 28C64A ic 8870 ttl
    Text: 28C64A 64K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K nonvolatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the


    Original     		PDF 28C64A 28C64A DS11109G-page 28C64A-15 ic 8870 ttl

    Untitled

    Abstract: No abstract text available
    Text: GENERAL INSTRUMENT PREUOMilDNIÂIRlY D 1 N IF O M Â T D O IM 28C64A 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION • High Performance CMOS Technology for Low Power Dissipation — 100 /uA Standby — 30 mA Active ■ Fast 1-ms Byte Write Time


    OCR Scan     		PDF 28C64A Ac496-0844; DS11109A-8

    2BC64

    Abstract: No abstract text available
    Text: 28C64A & DICE FORM M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM D IE C O N F IG U R A TIO N FEATURES Die Size: 134 x 206 sq. mils n (O w Tf n Q § Q O 9 | • 250ns Access Time • CMOS Technology for Low Power Dissipation cm T- o — 30m A Active


    OCR Scan     		PDF 28C64A 250ns DS11135A-6 2BC64

    Untitled

    Abstract: No abstract text available
    Text: JÊ Ë Ê È L * & 28C64A M ig z r o n c h ip i 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms


    OCR Scan     		PDF 28-pin 32-pin DS111251-page

    Untitled

    Abstract: No abstract text available
    Text: 28C64A M icro ch ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100|iA Standby • Fast Byte Write Time— 200|js or 1ms • Data Retention >10 years


    OCR Scan     		PDF 28C64A 150ns DS11109D-7 28C64AF 200jxs 11109D-8

    Untitled

    Abstract: No abstract text available
    Text: 28C64A/KM28C65A CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • S im ple Byte W rite & Page W rite — Single TTL Level W rite Signal


    OCR Scan     		PDF KM28C64A/KM28C65A 28C64A/65A: I/65A 28C65A) 64-Byte 150ns 00f/Aâ

    Untitled

    Abstract: No abstract text available
    Text: Military 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns Maximum • C M O S Technology for Low Power Dissipation — 30 mA Active — 100 |iA Standby • Fast Byte Write Time— 200 us or 1 ms


    OCR Scan     		PDF 28C64A DS60003A-8

    Untitled

    Abstract: No abstract text available
    Text: 28C64A PR O D UC T PREVIEW 64 High Speed CMOS K Electrically Erasable PROM October 1989 Block Diagram Features • ■ ■ ■ High Speed: 90, 120, 150 ns Access Times ROW ADDRESS LATCHES Commercial and Military Temperature Ranges CMOS Technology Low Power


    OCR Scan     		PDF 28C64A 28C64A

    Untitled

    Abstract: No abstract text available
    Text: 3890002 GENL mCROCHIP $ TECHNOLOGY I NS T R / INC GENERAL INSTRUMENT 83D MICROCHIP A3 D 28C64A 03412 bl03SGl 0GD341S D T-M q-i3~27 1 I P B i y H D I i M I R V O lN lF Û IR tl T D Û IN l 64K (8K x 8 CMOS ElectricaUy Erasable PROM FEATURES • High Performance CMOS Technology for Low


    OCR Scan     		PDF bl03SGl 0GD341S 28C64A DS11109A-8

    28C64A

    Abstract: A12C HA11
    Text: 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation — 30mA Active — 10OjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years


    OCR Scan     		PDF 28C64A 150ns 200ns 28-pin 32-piny DS11109E-page 28C64AF 150nsec 28C64A A12C HA11

    26c64

    Abstract: 26C64A *26C64
    Text: a 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		PDF 28C64A Time--200 S11109F-page 26c64 26C64A *26C64

    Untitled

    Abstract: No abstract text available
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non­ volatile etectricaly Erasable PROM. The 28C64A is accessed ike a static RAM for the read orwrite cycles without


    OCR Scan     		PDF 28C64A Time--200 DS111091-page 28C64A 8x20mm

    Untitled

    Abstract: No abstract text available
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 jxs or 1 ms • Data Retention >10 years


    OCR Scan     		PDF 28C64A 28-pin DS11109F-page Q01B421

    Untitled

    Abstract: No abstract text available
    Text: $ 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100nA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years


    OCR Scan     		PDF 28C64A 100nA 28-pin 28-Lead, 44-Lead, 10x10mm) bl03201 001DS11 DS00049E

    Untitled

    Abstract: No abstract text available
    Text: 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 n-A Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write


    OCR Scan     		PDF 28C64A 28-pin 32-pin DS11109G-I

    28C64A

    Abstract: 28C64A-15 28C64A-20 28C64A-25 MS-011
    Text: 28C64A 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write


    OCR Scan     		PDF 28C64A 28-pin 32-pin MS-016AE DS00049M-page 28C64A 28C64A-15 28C64A-20 28C64A-25 MS-011

    28C64A

    Abstract: A12C
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years


    OCR Scan     		PDF 28-pin 32-pin 28C64A A12C

    KM28C64A20

    Abstract: KM28C64A-20
    Text: 28C64A/KM28C65A CMOS EEPROM 8 K /8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • Sim ple Byte W rite & Page W rite — Single TTL Level W rite Signal


    OCR Scan     		PDF KM28C64A/KM28C65A 28C64A/65A: I/65A 28C65A) 64-Byte 150ns 1555H KM28C64A20 KM28C64A-20

    Untitled

    Abstract: No abstract text available
    Text: t>3E D • bl03201 D0D7540 Mflñ IMCHP MICROCHIP TECHNOLOGY INC 28C64A Q M icrochip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 100mA Standby


    OCR Scan     		PDF bl03201 D0D7540 28C64A 150ns 100mA 200ns DS11109E-page 28C64AF

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip 28C64A 64K 8K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |xA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write


    OCR Scan     		PDF 28C64A 28-pin 32-pin 28C64A 8x20mm DS11109H-page