MS21340-04
Abstract: torque ms21340 21FW-R1 FED-STD-H28 MS21340 MS21340 NUT RL30-H131-30 ptc 831
Text: FO-52847-F 1 2 3 4 5 6 7 8 9 J 10 REV A B C DOCUMENT 0014471 0016113 0018560 D 0076914 CHANGED BY JM/AP 29JUL05 JM/AP 19OCT05 JM/AP 19JAN06 BM 28APR11 CHECK PH/AP PH/AP PH/AP DSK J .831 MAX 5 1 OPERATING CHARACTERISTICS .625 I ELECTRICAL SPECIFICATIONS OPERATE MAGNETIC FLUX DENSITY: 250 GAUSS MAX.
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Original
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FO-52847-F
29JUL05
19OCT05
19JAN06
28APR11
21FW-R1
5M-1994
MS21340-04
torque ms21340
FED-STD-H28
MS21340
MS21340 NUT
RL30-H131-30
ptc 831
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PDF
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MS21340-04
Abstract: MS21340 NUT JSFY10A22WR3N24 MS21340 RL30-H131-30 RL30-H111-30 21FW-74 FED-STD-H28 ptc 831
Text: FO-52847-F 1 2 J 3 4 5 6 7 8 9 REV A B C D .831 MAX 10 DOCUMENT 0014471 0016113 0018560 0076914 CHANGED BY JM/AP 29JUL05 JM/AP 19OCT05 JM/AP 19JAN06 BM 28APR11 CHECK PH/AP PH/AP PH/AP DSK J 5 .625 1 OPERATING CHARACTERISTICS I ELECTRICAL SPECIFICATIONS OPERATE MAGNETIC FLUX DENSITY: 250 GAUSS MAX.
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Original
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FO-52847-F
29JUL05
19OCT05
19JAN06
28APR11
14JUL05
5M-1994
21FW-74
MS21340-04
MS21340 NUT
JSFY10A22WR3N24
MS21340
RL30-H131-30
RL30-H111-30
21FW-74
FED-STD-H28
ptc 831
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PDF
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Untitled
Abstract: No abstract text available
Text: MUR440, MUR460 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability
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Original
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MUR440,
MUR460
DO-201AD
22-B106
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-15ETH03PbF Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES Base cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 1 Cathode TO-220AC • Compliant to RoHS Directive 2002/95/EC
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Original
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VS-15ETH03PbF
2002/95/EC
O-220AC
O-220AC
11-Mar-11
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PDF
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VS-30ETH06PBF
Abstract: No abstract text available
Text: VS-30ETH06PbF Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base cathode 2 • Reduced Qrr and soft recovery • 175 °C TJ maximum • For PFC CRM/CCM operation • Low forward voltage drop • Low leakage current 1 Cathode TO-220AC 3
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Original
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VS-30ETH06PbF
O-220AC
2002/95/EC
O-220AC
11-Mar-11
VS-30ETH06PBF
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-8ETH06PbF, VS-8ETH06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AC • Low leakage current TO-220 FULL-PAK • Fully isolated package VINS = 2500 VRMS
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Original
|
VS-8ETH06PbF,
VS-8ETH06FPPbF
O-220AC
O-220
E78996
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-MUR1520PbF Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES Base cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current TO-220AC • Compliant to RoHS Directive 2002/95/EC
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Original
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VS-MUR1520PbF
2002/95/EC
O-220AC
VS-MUR1520PbF
O-220AC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-8ETX06PbF, VS-8ETX06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK TO-220AC • Low leakage current
|
Original
|
VS-8ETX06PbF,
VS-8ETX06FPPbF
O-220AC
O-220
E78996
2002/95/EC
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-8ETX06PbF, VS-8ETX06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK TO-220AC • Low leakage current
|
Original
|
VS-8ETX06PbF,
VS-8ETX06FPPbF
O-220AC
O-220
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-MUR2020CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 10 A FRED Pt FEATURES Base common cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current TO-220AB • Compliant to RoHS Directive 2002/95/EC
|
Original
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VS-MUR2020CTPbF
2002/95/EC
O-220AB
VS-MUR2020CTPbF
O-220AB
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-15ETH03PbF Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES Base cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 1 Cathode TO-220AC • Compliant to RoHS Directive 2002/95/EC
|
Original
|
VS-15ETH03PbF
2002/95/EC
O-220AC
O-220AC
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-MUR1520PbF Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES Base cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current TO-220AC • Compliant to RoHS Directive 2002/95/EC
|
Original
|
VS-MUR1520PbF
2002/95/EC
O-220AC
VS-MUR1520PbF
O-220AC
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MUR440, MUR460 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability
|
Original
|
MUR440,
MUR460
DO-201AD
22-B106
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
|
PDF
|
VS-20CTH03FP
Abstract: No abstract text available
Text: VS-20CTH03PbF, VS-20CTH03FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AB • Low leakage current TO-220 FULL-PAK • Fully isolated package VINS = 2500 VRMS
|
Original
|
VS-20CTH03PbF,
VS-20CTH03FPPbF
O-220AB
O-220
E78996
2002/95/EC
AEC-Q101
O-220)
O-220FP)
2011/65/EU
VS-20CTH03FP
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: VS-30CTH03PbF Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current TO-220AB • Compliant to RoHS Directive 2002/95/EC
|
Original
|
VS-30CTH03PbF
2002/95/EC
O-220AB
AEC-Q101
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: VS-15ETH06PbF, VS-15ETH06FPPbF Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AC • Low leakage current TO-220 FULL-PAK Base cathode
|
Original
|
VS-15ETH06PbF,
VS-15ETH06FPPbF
O-220AC
O-220
E78996
2002/95/EC
VS-15ETH06PbF
11-Mar-11
|
PDF
|
ASA-GF30
Abstract: PBT ASA-GF30 PBT -ASA-GF30 4114435 zfw 03
Text: —U N P " R I I . S H F n COPYRIGHT RELEASED BY AL L FOR PUBLICATION RIGHTS 2004 LOC RE V I S I O N S D I ST AI RESERVED. 7 x 5 PROJEOT-NO A89-52101 C O D I N G A1 = 35±0.15 LTR F3 DE SC R I P T ION DATE R E V IS E D P E R E C O -1 1-005150 28APR11 D WN
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OCR Scan
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A89-52101
28APR11
16P0S.
ASA-GF30
PBT ASA-GF30
PBT -ASA-GF30
4114435
zfw 03
|
PDF
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Untitled
Abstract: No abstract text available
Text: LOC RE V I S I O N S D I ST CÛ LU p LTR A1 17.5 DESCRIPTION DWN DATE 28APR11 R E V IS E D P E R E C O -1 1-005150 RK APVD HMR 25.0 10.0 in rn >0 if MIOxO.75 2.4 3.2 1.5 9.0 RoHS Compliant FOR FURTHER INFORMATION SEE DATA SHEET FOR SERIES TW - W IRE WOUND SPINDLE OPERATED POTENTIOMETER
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OCR Scan
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28APR11
JAN-09
08-JAN-09
08-JAN-09
|
PDF
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163007-1
Abstract: 163007-5
Text: TH I S D R A W I NG IS COPYRIGHT U N PU B LI SHED. - RELEASED FOR ALL BY PUBLICATION RIGHTS LOC D I ST RE V I S I ONS RESERVED. LTR D1 DIMENSIONS a— IN DESCRIPTION REVISED PER ECO-11-005294 DATE DWN APVD 28APR11 RK HMR mm 16,8 — e IL 1 s T 9. I •■
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OCR Scan
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ECO-11-005294
28APR11
I4AUG07
4AUG07
I4AUG07
163007-1
163007-5
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PDF
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Junior-Power
Abstract: No abstract text available
Text: TH I S C DRAW ING IS COPYRIGHT UNPUBLI SHED. RELEASED BY FOR ALL PUBLICATION RIGHTS 2006 LOC RESERVED. REV I S I ONS D I ST A A3 around c DESCR I PTION LTR R E V IS E D P E R E C O -1 1-005150 DATE D WN APVD 28APR11 RK HMR 1.5 c 1 1 1 73.4 1 1 3 UD 3 928 554-6
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OCR Scan
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ECO-11-005150
28APR11
13MAR1986
25AUG2006
S-828657
Junior-Power
|
PDF
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PA66-GF35
Abstract: pbt-gf30 PA66GF35 PBT-GF-30 PBTGF-30 PBTGF30 967067-1 967056-1 11703498
Text: 8 THIS C DR AWI NG IS UNPUBLISHED. RELEASED FOR ALL COPYRIGHT 2007 PUBLICATION RIGHTS DIST LOC RESERVED. REV I S I O N S A LTR C3 SHOWN CODINGS 11703498-1 2:1 - SHOWN DWN APVD RK HMR DATE R EV ISE D P ER ECO-11-005150 28APR11 SHOWN CODINGS 11703498-3 2:1 1 1703498-2
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OCR Scan
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ECO-11-005150
28APR11
2-1670ll-Nr.
19JUN2007
JUN2007
PA66-GF35
pbt-gf30
PA66GF35
PBT-GF-30
PBTGF-30
PBTGF30
967067-1
967056-1
11703498
|
PDF
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338068-8
Abstract: 338068-0
Text: T H 10 PBAWt WO I S UNPUOLt OHEO. COPYRIGHT - RELEASED BY F OR ALL PUBLICATION RIGHTS L OC D I ST REV I S IONS RESERVED. LTR E1 REFERENCE MATING INTERFACE ,27 STAGGERED PITCH x 1,5 DATE DWN APVD 28APR11 RK HMR DESCRIPTION REVISED PER ECO-11-005294 PATTERN
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OCR Scan
|
ECO-11-005294
338068-8
338068-0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG C IS UNPUBLI SHED. RELEASED ALL BY COPYRIGHT FOR PUBLICATION RIGHTS 20 0 0 L OG R E V I S IO NS D I ST GW RESERVED. C1 1 SEE S H E E T 2 FOR M O D U L A R J A C K ô P O S . / 4 C O N T A C T S 2 FOR A P P L I C A T I O N 3 T O L E R A N C E S ONL ES S O T H E R W I S E
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OCR Scan
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28APR11
FEB05
S-1705950
|
PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR ALL C O P Y R I G H T 2000 PUBLICATION RIGHTS LOC RESERVED. DIST R E V I S IONS R [ 1 SEE SHEET 2 FOR MODULAR JAEK 2 FOR APPLI CA TIO N 3 TOLERANEES ONLESS 4 DORABILITY THIS WILL IS 2 0 0 E Y E L E S M A X A E E O R D I N O T O T E S T
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OCR Scan
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28APR11
26AU011
14FEB05
|
PDF
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