N-7075
Abstract: No abstract text available
Text: Objective Product Specification nAD1280-18 12-Bit 80MSPS Sampling Analog-to-Digital Converter FEATURES APPLICATIONS • • • • • • • • • • • • • • 1.8V/3.3V power supply SINAD typ 67dB for fin = 50MHz Low power (288mW@1.8V) Sample rate: 15-80MSPS
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nAD1280-18
12-Bit
80MSPS
50MHz)
288mW
15-80MSPS
nAD1280-18
N-7075
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KAD5512P
Abstract: 001lV matte Power Supply Control IC dap 07 500MSPS KAD5512 KAD5512HP KAD5514P-25
Text: KAD5512HP Data Sheet December 5, 2008 High Performance 12-Bit, 250/210/170/125MSPS ADC FN6808.0 Features The KAD5512HP is the high-performance member of the KAD5512 family of 12-bit analog-to-digital converters. Designed with Intersil’s proprietary FemtoCharge
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KAD5512HP
12-Bit,
250/210/170/125MSPS
FN6808
KAD5512HP
KAD5512
12-bit
250MSPS.
14-bit
KAD5512P
001lV
matte
Power Supply Control IC dap 07
500MSPS
KAD5514P-25
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MSM51V17405F
Abstract: CA10 MSM51V17405
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM51V16405F
Abstract: MSM51V16405
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM51V17805
Abstract: SOJ28
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0129-17-61
MSM51V17805D/DSL
MSM51V17805D/DSL
152-Word
MSM51V17805D/DSLCMOS2
42CMOS
28SOJ28TSOP
04832ms2
048128msSL
28400milSOJ
MSM51V17805
SOJ28
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SOJ28
Abstract: bsl 100 MSM51V16800B
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0074-17-41
MSM51V16800B/BSL
MSM51V16800B/BSL
152-Word
MSM51V16800B/BSLCMOS2
42CMOS
28SOJ28TSOP
09664ms4
096128msSL
28400milSOJ
SOJ28
bsl 100
MSM51V16800B
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Untitled
Abstract: No abstract text available
Text: Preliminary SUF-2000 Product Description Sirenza Microdevices’ SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from
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SUF-2000
SUF-2000
EDS-105416
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Untitled
Abstract: No abstract text available
Text: LTC3855 Dual, Multiphase Synchronous DC/DC Controller with Differential Remote Sense FEATURES n n n n n n n n n n n n n n n n DESCRIPTION Dual, 180° Phased Controllers Reduce Required Input Capacitance and Power Supply Induced Noise High Efficiency: Up to 95%
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LTC3855
250kHz
770kHz
12-Phase
50kHz
900kHz,
LT3845
100kHz
500kHz,
TSSOP-16
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HY51V16160BJC
Abstract: No abstract text available
Text: HY51V18160B,HY51V16160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V18160B
HY51V16160B
1Mx16,
16-bit
1Mx16
HY51V16160BJC
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HY51V17800B
Abstract: HY51V17800C
Text: HY51V17800C,HY51V16800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17800C
HY51V16800C
HY51V17800B
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64128K-RGB
Abstract: 5mm RGB led 4 pin 64128K
Text: Displaytech Ltd LCD MODULE 64128K-RGB SERIES Version : 1.1 Displaytech Ltd. Website: www.displaytech.com.hk LCD Module Product Specification Product: 64128K Series LCD Module 128 x 64 DOTS P 1 of 21 Displaytech Ltd LCD MODULE 64128K-RGB SERIES Version : 1.1
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64128K-RGB
64128K
5mm RGB led 4 pin
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RS560C
Abstract: RS560 common base amplifier circuit common emitter amplifier
Text: Issued July 1983 004-591 Data Pack J RF amplifier IC RS560C Data Sheet RS stock number 303-214 A high performance low noise RF amplifier i.c. in an 8 pin DIL package. The large number of circuit nodes accessible from the outside of the package affords great flexibility, enabling the operating currents and
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RS560C
RS560C
RS560
common base amplifier circuit
common emitter amplifier
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Untitled
Abstract: No abstract text available
Text: PEDD51V18160F-01 1Semiconductor MSM51V18160F This version: May. 2000 Previous version : Preliminary 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate
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PEDD51V18160F-01
MSM51V18160F
576-Word
16-Bit
MSM51V18160F
42-pin
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Untitled
Abstract: No abstract text available
Text: PEDD51V17400F-01 1Semiconductor MSM51V17400F This version: May. 2000 Previous version : Preliminary 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate
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PEDD51V17400F-01
MSM51V17400F
304-Word
MSM51V17400F
26/24-pin
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TC51V16405
Abstract: TC51V16405c
Text: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The
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TCS1V1c405
TC51V16405CSJS/CSTS
300mil)
TCS1V16405
TC51V16405
SOJ26
TSOP26
TC51V16405c
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
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TC51V16400BST-60/70
51V16400B
TC51V16400BST
300mil)
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process
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1Mx16,
16-bit
1Mx16
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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Untitled
Abstract: No abstract text available
Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques
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HY51V16100B
4b750flÃ
1AD43-00-MAY95
QQ04374
HY51V16100BJ
HY51V16100BSU
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Untitled
Abstract: No abstract text available
Text: PRE LIM IN AR Y- - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB8 1 V16405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains
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V16405A-60/-70
MB81V16405A
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Untitled
Abstract: No abstract text available
Text: HM51W16400 Series HM51W17400 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-649A Z Rev. 1.0 Oct. 14, 1996 Description The Hitachi H M 51W 16400 Series, H M 51W 17400 Series are CMOS dynamic RAMs organized 4 ,194,304word X 4-bit. They employ the m ost advanced 0.5 Jim CMOS technology for high performance and low
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HM51W16400
HM51W17400
304-word
ADE-203-649A
304word
300-mil
26-pin
ns/70
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16410A
HY51V1641
D32-00-MAY94
4b75Dflfl
HY51V16410AJC
HY51V16410ASLJC
HY51V16410ATC
HY51V16410ASLTC
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Untitled
Abstract: No abstract text available
Text: HM51W16400 Series HM51W17400 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-649C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM51W16400 Series, HM51W17400 Series are CMOS dynamic RAMs organized 4,194,304word x 4-bit. They employ the most advanced 0.5 |i.m CMOS technology for high performance and low
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HM51W16400
HM51W17400
304-word
ADE-203-649C
304word
300-mil
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Untitled
Abstract: No abstract text available
Text: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400B
HY51V16400B
1A047-00-MAY95
HY51V16400BJ
HY51V16400BSL
HY51V16400BT
HY51V16400BSLT
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