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TXC Corporation AU-12.288MBE-T XTAL OSC XO 12.2880MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AU-12.288MBE-T	Digi-Reel	6,512		1	1 $2.26 10 $1.964 100 $1.707 1000 $1.4837 10000 $1.4837	Buy Now
	AU-12.288MBE-T	Cut Tape	6,512		1	1 $2.26 10 $1.964 100 $1.707 1000 $1.4837 10000 $1.4837	Buy Now
	AU-12.288MBE-T	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.33072	Buy Now
Mouser Electronics	AU-12.288MBE-T					1 - 10 - 100 - 1000 - 10000 $1.31	Get Quote
Newark	AU-12.288MBE-T	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.36	Buy Now
	AU-12.288MBE-T	Cut Tape			3,000	1 - 10 - 100 - 1000 $1.79 10000 $1.79	Buy Now
TXC Corporation 7W-12.288MBB-T XTAL OSC XO 12.2880MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	7W-12.288MBB-T	Cut Tape	335		1	1 $1.59 10 $1.52 100 $1.2726 1000 $1.2726 10000 $1.2726	Buy Now
TXC Corporation 8N-12.288MBE-T 2.0X1.6 CMOS QUARTZ OSCILLATOR /
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DigiKey	8N-12.288MBE-T	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.8125	Buy Now
FTS 8N-12.288MBE-T 2.0x1.6x.75 XO 3.3V 50ppm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	8N-12.288MBE-T	Reel			1	1 $1.29 10 $1.125 100 $0.819 1000 $0.6 10000 $0.474	Buy Now
TXC Corporation 7W-12.288MBA-T XTAL OSC XO 12.2880MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	7W-12.288MBA-T	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	7W-12.288MBA-T	Digi-Reel			1	1 $1.93 10 $1.93 100 $1.93 1000 $1.93 10000 $1.93	Buy Now
	7W-12.288MBA-T	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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288MB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MICRON BGA PART MARKING Abstract: No abstract text available Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate	Original	288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING	PDF
K4R571669A-FCK8 Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9 Text: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary	Original	K4R571669A/K4R881869A 256/288Mbit 16/18bit 1066MHz 260mV 300mV 800MHz 1066MHz 256/288Mb) K4R571669A-FCK8 K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9	PDF
code A106 Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106 Text: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V	Original	MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms code A106 MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106	PDF
Untitled Abstract: No abstract text available Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V	Original	MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms	PDF
TC59LM836DKB Abstract: TC59LM836DKB-33 Text: TC59LM836DKB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network	Original	TC59LM836DKB-33 288Mbits 152-WORDS 36-BITS TC59LM836DKB	PDF
Untitled Abstract: No abstract text available Text: Preliminary GS82582DT19/37E-450/400/375/333 288Mb SigmaQuad-II+TM Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface	Original	GS82582DT19/37E-450/400/375/333 165-Bump 165-bump, 165-bum GS82582DTxxE-300T. 82582DT1937	PDF
BW211 Abstract: GS82582Q38E-500I Text: Preliminary GS82582Q20/38E-500/450/400/375 288Mb SigmaQuad-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.5 clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface	Original	GS82582Q20/38E-500/450/400/375 165-Bump 165-bump, 82582Q2038 BW211 GS82582Q38E-500I	PDF
Untitled Abstract: No abstract text available Text: Preliminary GS82582T19/37E-450/400/375/333 288Mb SigmaDDR-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus • JEDEC-standard pinout and package	Original	GS82582T19/37E-450/400/375/333 165-Bump 165-bump, GS82582TxxE-300T. GS82582T1937	PDF
EL B17 Abstract: No abstract text available Text: UGD128R16 8 08U6J(7J) Data sheets can be downloaded at www.unigen.com 256/288MB Bytes (128M x 16/18 bits) RAMBUS SO-RIMM MODULE 160 Pin SO-RIMM based on 8 pcs 8M x 16/18 RDRAM & 16K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION	Original	UGD128R16 08U6J 256/288MB 18bits 800MHz 600MHz 160-Pin UGD128R1608U6J-L6/G6/T6 256MB 128Mx16) EL B17	PDF
200-ball Abstract: A79 marking code MN18R1628EF0 samsung resitor Text: MN18R1624 8 EF0 MP18R1624(8)EF0 Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Version 1.0 May 2004	Original	MN18R1624 MP18R1624 288Mbit 16Mx18) 288Mb 16K/32ms 200-ball A79 marking code MN18R1628EF0 samsung resitor	PDF
09005aef809f284b Abstract: No abstract text available Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9‡ Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288MB 288Mb MT49H8M36 MT49H16M18 09005aef80a41b46/zip: 09005aef809f284b	PDF
MT49H16M18C Abstract: No abstract text available Text: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)	Original	288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C MT49H16M18C	PDF
a65 1021 Abstract: No abstract text available Text: MR16R1622 4/8/G AF0(1) MR18R1622(4/8/G)AF0(1) Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002)	Original	MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb a65 1021	PDF
MICRON BGA PART MARKING Abstract: NF 034 T6N 700 MT49H16M18 Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate	Original	288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING NF 034 T6N 700 MT49H16M18	PDF

smd dk qk Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O	Original	288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM	PDF
MT49H16M18C Abstract: No abstract text available Text: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O	Original	288Mb 288Mb MT49H8M18C MT49H16M18C	PDF
Untitled Abstract: No abstract text available Text: K4C89093AF Target 288Mb Network-DRAM-II Specification Version 0.2 - 1 - REV. 0.2 Aug. 2003 K4C89093AF Target Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.	Original	K4C89093AF 288Mb 800Mbps 400Mhz) K4C89363AF-GC 8K/32ms 667Mbps/pin 333MHz,	PDF
Untitled Abstract: No abstract text available Text: K4C89183AF 288Mb Network-DRAM-II Specification Version 0.11 - 1 - REV. 0.11 Apr. 2003 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.	Original	K4C89183AF 288Mb 800Mbps 400Mhz) 8K/32ms 800Mbps/pin 400MHz, 667Mbps/pin 333MHz,	PDF
direct rdram rac Abstract: No abstract text available Text: MD16R1624 8/G AF0 MD18R1624(8/G)AF0 Change History Version 1.0 (April 2002) * First copy. * Based on 1.0 version Rambus 256/288Mbit 32 Bit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(April 2002) 256/288Mbit A-die 32 Bit RIMM Module Datasheet	Original	MD16R1624 MD18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) direct rdram rac	PDF
DRAM material declaration Abstract: No abstract text available Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004	Original	MR16R1624 MR18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb DRAM material declaration	PDF
MARKING CODE 11gb Abstract: No abstract text available Text: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V	Original	MR18R326GAG0 256/288Mbit 32Mx18) 16pcs 576Mb 32K/32ms MARKING CODE 11gb	PDF
LLDRAM Abstract: No abstract text available Text: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II	Original	GS4288C09/18/36L 144-Ball 067Gb/s/pin GS4288C09-533T. 288Mb 4288Cxx LLDRAM	PDF
TOP SIDE MARKING OF MICRON Abstract: 84 FBGA 84-PIN MT6V16M16F2-3C MT6V16M16F2-3M MT6V16M18F2-3M RDRAM FBGA 84 MICRON fBGA package code Text: ADVANCE 256Mb/288Mb: 16 MEG x 16/18 RDRAM RAMBUS DRAM MT6V16M16 - 512K x 16 x 32 banks MT6V16M18 - 512K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES 84-PIN FBGA TOP VIEW	Original	256Mb/288Mb: MT6V16M16 MT6V16M18 84-PIN 18-bit) 256MRDRAM TOP SIDE MARKING OF MICRON 84 FBGA MT6V16M16F2-3C MT6V16M16F2-3M MT6V16M18F2-3M RDRAM FBGA 84 MICRON fBGA package code	PDF
Untitled Abstract: No abstract text available Text: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II	Original	GS4288C09/18/36L 144-Ball 067Gb/s/pin 200MHz 4288Cxx	PDF

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288MB Search Results

288MB Price and Stock

TXC Corporation AU-12.288MBE-T

TXC Corporation 7W-12.288MBB-T

TXC Corporation 8N-12.288MBE-T

FTS 8N-12.288MBE-T

TXC Corporation 7W-12.288MBA-T

288MB Datasheets Context Search

MICRON BGA PART MARKING

K4R571669A-FCK8

code A106

Untitled

TC59LM836DKB

Untitled

BW211

Untitled

EL B17

200-ball

09005aef809f284b

MT49H16M18C

a65 1021

MICRON BGA PART MARKING

smd dk qk

MT49H16M18C

Untitled

Untitled

direct rdram rac

DRAM material declaration

MARKING CODE 11gb

LLDRAM

TOP SIDE MARKING OF MICRON

Untitled