Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itch in g D iodes 2835LT1 MMBD2836LT1 CATHODE ANODE 3 o- - » -N - O 1 —O 2 % CATHODE 2 C A S E 318-08, S T Y L E 12 S O T - 23 T O -2 3 6 A B M A XIM U M R AT IN G S (EACH DIODE) Rating Reverse Voltage
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MMBD2835LT1
MMBD2836LT1
2835LT1
2836LT1
225Device
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Untitled
Abstract: No abstract text available
Text: M A X IM U M RATINGS EACH DIODE Rating R eve rse V oltage Symbol Value Unit Vr 75 35 V dc If 100 m A dc Symbol Max Unit PD 225 mW 1.8 m w rc R flJA 556 °C/W Pd 300 mW 2.4 m W /X RflJA 417 °C/W T j.T stq - 55 to + 1 5 0 °C M M BD 2836LT1 2835LT1 Forw ard Current
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2836LT1
MMBD2835LT1
MMBD2836LT1
OT-23
O-236AB)
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diode RA 225 R
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Reverse Voltage Symbol Value Unit Vr 75 35 Vdc if 100 m Adc MMBD2836LT1 2835LT1 Forward C urrent 2835LT1 MMBD2836LT1 CASE 318-07, STYLE 12 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Sym bol Max Unit pd 225 mW 1.8
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OCR Scan
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MMBD2836LT1
MMBD2835LT1
MMBD2836LT1
OT-23
O-236AB)
diode RA 225 R
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