IXTV280N055T
Abstract: PLUS220SMD
Text: Preliminary Technical Information IXTV 280N055T IXTV 280N055TS TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 280 A ≤ 3.2 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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280N055T
280N055TS
PLUS220
IXTV280N055T
PLUS220SMD
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTV 280N055T IXTV 280N055TS VDSS ID25 RDS on = 55 V = 280 A ≤ 3.2 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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280N055T
280N055TS
PLUS220
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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