Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    280N055T Search Results

    SF Impression Pixel

    280N055T Price and Stock

    IXYS Corporation IXTQ280N055T

    MOSFET N-CH 55V 280A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ280N055T Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXTH280N055T

    MOSFET N-CH 55V 280A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH280N055T Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Integrated Circuits Division IXTV280N055T

    MOSFET DIS.280A 55V N-CH PLUS220 TRENCHMV THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTV280N055T
    • 1 $3.69391
    • 10 $3.69391
    • 100 $3.3581
    • 1000 $3.3581
    • 10000 $3.3581
    Get Quote

    280N055T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTV280N055T

    Abstract: PLUS220SMD
    Text: Preliminary Technical Information IXTV 280N055T IXTV 280N055TS TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 280 A ≤ 3.2 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original
    PDF 280N055T 280N055TS PLUS220 IXTV280N055T PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTV 280N055T IXTV 280N055TS VDSS ID25 RDS on = 55 V = 280 A ≤ 3.2 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original
    PDF 280N055T 280N055TS PLUS220

    280N055T

    Abstract: No abstract text available
    Text: Advance Technical Information Trench Gate Power MOSFET IXTF 280N055T VDSS ID25 = 55 V = 150 A Ω ≤ 3.5 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    PDF 280N055T T-280N055T 280N055T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Trench Gate Power MOSFET 280N055T VDSS ID25 = 55 V = 150 A ≤ 3.5 m Ω RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original
    PDF IXTF280N055T 280N055T T-280N055T

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2