hitachi hn27c256
Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
Text: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /
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HM514100
HM514400
HM514800
HM51S4800
HM514900
HN62W4116
HN62W5016N
HM62W4018N
50/40ns)
hitachi hn27c256
hm514280
256K RAM HM62256
1M x 16-Bit x 4 Banks synchronous sRAM
BLS 16K-X
hitachi HM6264
Hitachi 32k static RAM
16M x8 55ns 72 pin flash dimm
sop-40 16-bit
hm6264 application note
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27c eeprom
Abstract: AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F
Text: STAND ARD MEMOR Y PRODUCT SELECT OR GUIDE ANDARD EMORY ELECTOR CERAMIC CONFIGURATIONS COMMITTED TO PROVIDING HIGH-QUALITY, INNOVATIVE SOLUTIONS TO THE HIGH-RELIABILITY MARKETPLACE STANDARD MEMORY PRODUCTS CERAMIC CONFIGURATIONS SRAM 16MEG MCM Configurable as
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16MEG
64Kx4)
256Kx1)
256Kx4)
512Kx32
1Mx16,
2Mx32
4Mx16,
1Mx32
2Mx16,
27c eeprom
AS27C256
92132
eeprom dip 36 uv
4lc eeprom
4Mx1 sram
FPM DRAM
MT42C4256
256Kx4 ZIP
FLASH MEMORY 29F
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philips diode PH 33J
Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without
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10-BIT
QS3L384)
QS3L2384
QS3L384
QS3L2384
philips diode PH 33J
UM61256FK-15
sem 2106 inverter diagram
IDT7024L70GB
um61256
UM61256ak sram
um61256fk15
HIGH VOLTAGE ISOLATION DZ 2101
C5584
IDT74LVC1G07ADY
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UM61256FK-15
Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
Text: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch
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74F257,
74FCT257,
74FCT257T
QS32257
QS3257
QS32257
UM61256FK-15
YD 6409
philips diode PH 33J
um61256
um61256ak-15
PZ 5805 PHILIPS
UM6164
KM6264BLS-7
UM61256ak sram
IDT8M624
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M5M418165
Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16
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Q4--2000
1Mx18
512Kx36
SE-597
x2255
M5M418165
NEC 2581
CSP-48
AS7C33256PFS18A
tc5588
KM6865
FLASH CROSS
256K16
TR-81090
la 4620
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DATA SHEET OF IC 317
Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,
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77106
Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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CBV2
Abstract: HN27C301
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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HM629127HB
Abstract: HM629127HBJP-15 HM629127HBJP-20 HM629127HBLJP-15 Hitachi Scans-001
Text: HM629127HB Series 1 M High Speed SRAM 128-kword x 9-bit HITACHI ADE-203-738A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The HM629127HB is an asynchronous high speed static RAM organized as 128-k word x 9-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit
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HM629127HB
128-kword
ADE-203-738A
128-k
400-mil
36-pin
HM629127HBJP/HBLJP
HM629127HBJP-15
HM629127HBJP-20
HM629127HBLJP-15
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed
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HM62W4100H
ADE-203-774A
400-mil
32-pin
ns/12
ns/15
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TI410
Abstract: No abstract text available
Text: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit HITACHI ADE-203-751A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM 62W 16255H is an asynchronous high speed static RAM organized as 256-kword X 16-bit. It has realized high speed access tim e (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed
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HM62W16255H
256-kword
16-bit)
ADE-203-751A
16255H
16-bit.
400-mil
44-pin
TI410
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Untitled
Abstract: No abstract text available
Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword X 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed
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HM62W4100H
ADE-203-774A
400-mil
32-pin
ns/12
ns/15
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Untitled
Abstract: No abstract text available
Text: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit HITACHI ADE-203-751A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W16255H is an asynchronous high speed static RAM organized as 256-kword x 16-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed
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HM62W16255H
256-kword
16-bit)
ADE-203-751A
16-bit.
400-mil
44-pin
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8128 RAM
Abstract: No abstract text available
Text: HM62A9128/8128 Series Preliminary 131,072-Word x 9 8 -Bit Synchronous Cache SRAM • FEATURES • For high speed cache memory applications • Pipeline access capability with on-chip address, strobe and I/O registers • Organization: 128 kword x 9(8) bit
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HM62A9128/8128
072-Word
32-pin
62A9128JP-20
62A8128JP-20
32-pin
CP-32D)
50MHz)
8128 RAM
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CBV2
Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: HM629127HB Series 1 M High Speed SRAM 128-kword x 9-bit HITACHI ADE-203-738A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The HM629127HB is an asynchronous high speed static RAM organized as 128-k word x 9-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit
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HM629127HB
128-kword
ADE-203-738A
128-k
400-mil
36-pin
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HM629127HB
Abstract: HM629127HBJP-15 HM629127HBJP-20 HM629127HBLJP-15 Hitachi Scans-001
Text: HM629127HB Series 1 M High Speed SRAM 128-kword x 9-bit HITACHI ADE-203-738A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The HM629127HB is an asynchronous high speed static RAM organized as 128-k word x 9-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit
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HM629127HB
128-kword
ADE-203-738A
128-k
400-mil
36-pin
D-85622
HM629127HBJP-15
HM629127HBJP-20
HM629127HBLJP-15
Hitachi Scans-001
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CBV2
Abstract: 27x10
Text: Reliability o f Hitachi IC Memories 1. Structure IC m em ory devices are classified as N M O S type, C M O S type, and B i-C M O S type. T here are advantages to it's circuit design, layout pattern, degree o f integration, and m anufacturing process. A ll H itachi m em ories are produced using standardized design, m anufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: HM621664HB Series 1 M High Speed SRAM 64-kword x 16-bit HITACHI ADE-203-349B(Z) Rev. 2.0 Nov. 1997 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am CMOS process and high speed circuit designing
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HM621664HB
64-kword
16-bit)
ADE-203-349B
16-bit.
400-mil
44-pin
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Untitled
Abstract: No abstract text available
Text: HM62W8511H Series 4M High Speed SRAM 512-kword x 8-bit HITACHI ADE-203-750A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W8511H is an asynchronous high speed static RAM organized as 512-kword X 8-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed
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HM62W8511H
512-kword
ADE-203-750A
400-mil
36-pin
ns/12
ns/15
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Untitled
Abstract: No abstract text available
Text: HM621400H Series 4M High speed SRAM 4-Mword x 1-bit HITACHI ADE-203-787A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM621400H is an asynchronous high speed static RAM organized as 4-Mword X 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed circuit
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HM621400H
ADE-203-787A
400-mil
32-pin
ns/12
ns/15
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Untitled
Abstract: No abstract text available
Text: HM628127HB Series 1 M High Speed SRAM 128-kword x 8-bit HITACHI ADE-203-350D (Z) Rev. 4.0 Nov. 1997 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit
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HM628127HB
128-kword
ADE-203-350D
128-k
400-mil
32-pin
HM628127HB-25
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Untitled
Abstract: No abstract text available
Text: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-789A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM624100H is an asynchronous high speed static RAM organized as 1-Mword X 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed circuit
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HM624100H
ADE-203-789A
400-mil
32-pin
ns/12
ns/15
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