transistor 3055
Abstract: DIODE IN 3055 TR 3055 6N135 6N136 VDE0884
Text: 6N135-3054/6N136-3055 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output FEATURES • • • • NC 1 8 C VCC B (VB) A 2 7 C 3 6 C (VO) NC 4 5 E (GND) i179081 DESCRIPTION The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with
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6N135-3054/6N136-3055
i179081
6N135
6N136
08-Apr-05
transistor 3055
DIODE IN 3055
TR 3055
VDE0884
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PDF
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74272
Abstract: 4686 AN609
Text: Si5944DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5944DU
AN609
27-Jun-07
74272
4686
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PDF
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74023
Abstract: AN609 Si5904DC
Text: Si5904DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5904DC
AN609
27-Jun-07
74023
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PDF
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74027
Abstract: AN609 Si5935DC
Text: Si5935DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5935DC
AN609
27-Jun-07
74027
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PDF
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AN609
Abstract: Si6423DQ
Text: Si6423DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si6423DQ
AN609
27-Jun-07
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PDF
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7935
Abstract: diode 7935 AN609 Si6410DQ n mosfet pspice parameters
Text: Si6410DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si6410DQ
AN609
27-Jun-07
7935
diode 7935
n mosfet pspice parameters
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PDF
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PS2231
Abstract: PS2136 ps223 phison
Text: 2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, R.O.C. Tel： 886-3-5833899 ext: 1001 or 1005 Fax： 886-3-5833666 Email：sales@phison.com Phison Electronics Corporation USB 2.0 Flash Controller Specification PS2231 Version 1.6
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PS2231
S-07074
PS2231
PS2136
ps223
phison
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PDF
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Untitled
Abstract: No abstract text available
Text: more than you expect ISDN-S Dual Transformers With Common Mode Chokes DigitalTelecom Features • RoHS compliant versions available • Includes Common Mode Choke • Small Size • Optional pin-outs and turns ratio • Excellent longitudinal balance • Matched to IC manufacturers’
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51935R
51936R
52124R
1500VDC
2000VAC
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diode cc 3053
Abstract: cc 3053 cc 3053 diode Infrared Temperature Sensor dip-6 IEC60065 K 3053 4N32 VDE0884 8172-1
Text: 4N32-3053 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Very high current transfer ratio, 500 % Min. • High isolation resistance, 1011 Ω typical • Standard plastic DIP package
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4N32-3053
2002/95/EC
2002/96/EC
i179005
08-Apr-05
diode cc 3053
cc 3053
cc 3053 diode
Infrared Temperature Sensor dip-6
IEC60065
K 3053
4N32
VDE0884
8172-1
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PDF
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74266
Abstract: DATA 74266 4712 74266 datasheet AN609
Text: Si5938DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5938DU
AN609
27-Jun-07
74266
DATA 74266
4712
74266 datasheet
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PDF
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DO-220AA
Abstract: JESD22-B102D J-STD-002B P2B MARKING CODE ESH2PD P2d MARKING CODE
Text: New Product ESH2PB, ESH2PC & ESH2PD Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers eSMPTM FEATURES • Very low profile - typical height of 1.0 mm Series • Ideal for automated placement • Glass passivated chip junction
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DO-220AA
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
DO-220AA
JESD22-B102D
J-STD-002B
P2B MARKING CODE
ESH2PD
P2d MARKING CODE
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PDF
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AN609
Abstract: Si6459BDQ
Text: Si6459BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si6459BDQ
AN609
27-Jun-07
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PDF
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74028
Abstract: AN609 Si5933DC
Text: Si5933DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5933DC
AN609
27-Jun-07
74028
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PDF
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AN609
Abstract: Si5905DC
Text: Si5905DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5905DC
AN609
27-Jun-07
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AN609
Abstract: Si6434DQ
Text: Si6434DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si6434DQ
AN609
27-Jun-07
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PDF
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Untitled
Abstract: No abstract text available
Text: 30L30CTPbF Vishay High Power Products Schottky Rectifier, 30 A FEATURES • • • • Base 2 common cathode 150 °C TJ operation Center tap configuration Very low forward voltage drop High frequency operation Pb-free Available RoHS* COMPLIANT • High purity, high temperature epoxy
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30L30CTPbF
O-220AB
12-Mar-07
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PDF
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TS53
Abstract: No abstract text available
Text: TS53Y Vishay Sfernice Surface Mount Miniature Trimmers Single-Turn Cermet Sealed FEATURES • 0.25 W at 70 °C • For PCB version see T53Y series RoHS • Wide ohmic range 10 Ω to 1 MΩ COMPLIANT • Small size for optimum packing density • Suitable for both manual or automatic operation
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TS53Y
TS53YL
TS53J
TS53YJ
18-Jul-08
TS53
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PDF
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74274
Abstract: 9327 AN609
Text: Si5857DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5857DU
AN609
27-Jun-07
74274
9327
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PDF
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION 5 4 2 3 - ALL RIGHTS RESERVED. LOC DIST AD 25 REVISIONS P LTR 0 1 DESCRIPTION DATE DWN 27JUN07 REVISED PER ECO-07-01 281 9 APVD DH DB HOUSING MATERIAL: GLASS-FILLED POLYMER.
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OCR Scan
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27JUN07
ECO-07-01
05MAY05
31MAR2000
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PDF
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Honeywell ES120-0030
Abstract: ES1200 F617 ES120-0030 Honeywell 8463
Text: F0-3M18-A10 I I 9 1 8 HONEYWELL 1 \^ 6 1 5 PART NUMBER 0 2 1 .9 5 ES120-0030 I 3 4 I REV 2 WANGE DOCUMENT CHANGED BY CHECK B 0031865 TSK 27JUN07 CMH I Terminals: 2 .8 0 /2 .7 5 x 0 .8 2 5 /0 .7 7 5 Brass, Tin Plated. HONEYWELL ES12 0 -0 0 3 0 MOULDED ON THIS FACE-s^
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F0-3M18-A10
ES120-0030
27JUN07
14MAY07
5M-1994
ES120-0030
Honeywell ES120-0030
ES1200
F617
Honeywell 8463
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 R E VIS IO N S LTR DESCRIPTION 01 9 5 [ 3 . 7 4 0 ] MAX HOUSING MATERIAL: POST MATERIAL: 90+0.1 [3.543+.004]-
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OCR Scan
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27JUN07
31MAR2000
S077239
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PDF
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PSR 406
Abstract: 2AC110 KCB0701
Text: i. F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER DOCUMENT REV 0032412 B 2AC110 PUSH TO OPERATE-RETURNS AUTOMATICALLY TO POSITION SHOWN PULL TO OPERATE-REMAINS IN OPERATED POSITION UNTIL RESET FOR AUTOMATIC RETURN BY NEXT FULL STROKE "PUSH" OPERATION B CHANGED
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OCR Scan
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24JUL07
2AC110
V7-6C13D8
27JUN07
5M-1994
PSR 406
2AC110
KCB0701
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PDF
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 R E VIS IO N S LTR 01 H O U SIN G 9 5 [3.74 0 ] POST MAX MATERIAL: M ATERIAL: DESCRIPTION REVISED PER E C O - 0 7 - 01 281 9
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OCR Scan
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27JUN07
05MAY05
05MAY05
31MAR2000
S077239
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY 1 T C 0 E L E C T R O N IC S P U B L IC A T IO N R IG H T S -, - RESERVED. C O R P O R A T IO N . D C 1 6 0 1 0 0 9 — A AMP 1471-9 REV 31M AR2000 TERMINALS TO UNWIND
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OCR Scan
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AR2000
27JUN07
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PDF
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