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    27CS12 Search Results

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    27CS12 Price and Stock

    NBK America LLC XGT-27CS-12-12

    Anti-Vibration Coupling: 1 Clamp
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XGT-27CS-12-12 Ammo Pack 1
    • 1 $54.27
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    NBK America LLC XGS-27CS-12-12

    Anti-Vibration Coupling: Short
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XGS-27CS-12-12 Ammo Pack 1
    • 1 $54.27
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    NBK America LLC XGS-27CS-12-14

    Anti-Vibration Coupling: Short
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XGS-27CS-12-14 Ammo Pack 1
    • 1 $54.27
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    NBK America LLC XGT-27CS-12-14

    Anti-Vibration Coupling: 1 Clamp
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XGT-27CS-12-14 Ammo Pack 1
    • 1 $54.27
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    • 100 $54.27
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    TURCK Inc CSM CKM 16-16-27/CS12206 (ALTERNATE: U-59712)

    CSM CKM 16-16-27/CS12206, U-59712 | Turck CSM CKM 16-16-27/CS12206
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    RS CSM CKM 16-16-27/CS12206 (ALTERNATE: U-59712) Bulk 9 Weeks 1
    • 1 $884.2
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    27CS12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    27pc512-2

    Abstract: 27PC512-20 TMS27C512
    Text: TMS27C512 65536 BY frBITUV ERASABLE TMS27PC512 65536 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES _ SMLS812G - NOVEMBER 1985 - REVISED SEPTEMBER 1997 • Organization. . . 65 536 by 8 Bits J PACKAGE • Single 5-V Power Supply TO P VIEW • Pin Compatible With Existing 512K MOS


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    PDF TMS27C512 TMS27PC512 SMLS812G 27C/PC512-10 27C/PC512-12 27C/PC512-15 27C/PC512-20 27C/PC512-25 400-mV 27pc512-2 27PC512-20

    Untitled

    Abstract: No abstract text available
    Text: 27C512A M ic r o c h ip 512K 64K x 8 CMOS EPROM FEATURES PACKAGE TYPE TSOP • High speed performance • CMOS Technology for low power consumption - 25 mA Active current - 30 n-A Standby current • Factory programming available • Auto-insertion-compatible plastic packages


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    PDF 27C512A 28-pin DS11173D-page blD3501 0013cm

    intel 27C011

    Abstract: 27C128 INTEL 27C513 27C128 st make 27C011 27C128 27C256 27C64 27CS12 87C64
    Text: in te i 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ Software Carrier Capacity ■ Automatic Page Clear — Resets to Page 0 on Power Up and


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    PDF 27C513 7128A 28-Pin 27C513 288-bit 27CS13 intel 27C011 27C128 INTEL 27C128 st make 27C011 27C128 27C256 27C64 27CS12 87C64

    C27C64Q

    Abstract: MC27C64 C27C B634
    Text: NMC27C64 tß National Semiconductor NMC27C64 65,536-Bit 8192 x 8 CMOS EPROM General Description Features The N M C27C64 is a 64K UV erasable, e lectrically re pro ­ gram m able and one-tim e program m able (OTP) CM OS EPROM ideally suited fo r a pplications w here fa s t tu rn ­


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    PDF NMC27C64 NMC27C64 536-Bit C27C64 28-pin bSQ112b C27C64Q MC27C64 C27C B634

    27C512

    Abstract: 27C512-15 27C512-150 eprom 27C512 CY27C512
    Text: r CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the


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    PDF CY27C512 -32-pin 28-pin 28-pin, 600-mil 32-pin CY27C512 27C512 27C512-15 27C512-150 eprom 27C512

    27CS12

    Abstract: 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD 27C256
    Text: INTEL CORP flEflORY/PLD/ 44E D 405bl7b GDVIS^ ' T 7% in ta l T • ITL2 ' ß - 2 ci 27C256 256K (32K x 8 CHMOS EPROM High Speed — 120 ns Access Time Low Power Consumption — 100 /xA Standby, 30 mA Active Fast Programming — Quick-Pulse Programming


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    PDF 405bl7b 27C256 28-Pin 32-Lead 144-bit 27C256 OD71t T-46-13-29 27CS12 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD

    k5m capacitor

    Abstract: 27C128 INTEL eprom 27c64 PROGRAMMER CIRCUIT ic 27c64 intel 27C011 27CS12 2732A TVR 07 spec 27C011 27C128
    Text: in te i 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ 170 ns Access Time ■ Two Line Control ■ Low Power — 30 mA max. Active — 100 f i A max. Standby


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    PDF 27C513 7128A 28-Pin 27C513 288-bit 27CS13 k5m capacitor 27C128 INTEL eprom 27c64 PROGRAMMER CIRCUIT ic 27c64 intel 27C011 27CS12 2732A TVR 07 spec 27C011 27C128

    Untitled

    Abstract: No abstract text available
    Text: NATL SENICOND -CNENORY} 10E D I bSDiisy aohiST? e | National Semiconductor T -4 6 -1 3-25 - PRELIMINARY NMC27C020 2,097,152-Bit 256k x 8 UV Erasable CMOS PROM General Description Features The NMC27C020 Is a high-speed 2048k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited


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    PDF NMC27C020 NMC27C020 152-Bit 2048k 32-pin

    nmc27c256

    Abstract: NMC27C256Q NMC27C256Q250 NMC27C256QE NMC27C256Q25 national semiconductor 27c32 NMC27C256Q200 NMC27C256Q20 J28A NMC27C256Q 200
    Text: NAT L S E MI C O N D MEMORY 31E b 5 G l 1 2 h Gü b 3 3 7 3 D T NMC27C256 National Semiconductor NMC27C256 262,144-Bit (32k x 8) UV Erasable CMOS PROM General Description Features The NMC27C256 is a high-speed 256k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited


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    PDF NMC27C256 NMC27C256 144-Bit NMC27C266 28-pln NMC27C256Q NMC27C256Q250 NMC27C256QE NMC27C256Q25 national semiconductor 27c32 NMC27C256Q200 NMC27C256Q20 J28A NMC27C256Q 200

    AT27C512R-15DC

    Abstract: AT-27C512R-12LM
    Text: AT27C512R Features • Fast Head Access Time - 90 ns • Low Power CMOS Operation 100 jiA max. Standby 20 mA max. Active at 5 MHz • Wide Selection of JEDEC Standard Packages 28-Lead 600-mil Cerdlp and OTP Plastic DIP, SOIC, or TSOP 32-Pad LCC, 32-Lead JLCC and OTP PLCC


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    PDF AT27C512R 28-Lead 600-mil 32-Pad 32-Lead AT27C512R AT27C512R-90TC AT27C512R-120TC AT27C512R-150TC 28DW6 AT27C512R-15DC AT-27C512R-12LM

    intel 27c512 eprom

    Abstract: 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2
    Text: INTEL CORP MEMORY/LOGIC 50E D • 4fl2hl7b GObböOH *4 ■ In te l' T -V L -lS -tS 27C512 *T“-V6-/3 -29 512K (64K x 8) CHMOS PRODUCTION AND UV ERASABLE PROMS ■ Software Carrier Capability ■ 120 ns Access Time ■ Two-Line Control ■ Inteligent identifier Mode


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    PDF 27C512 27C512 288-bit T-46-13-29 intel 27c512 eprom 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2

    27c32

    Abstract: NMC27CP1280 NMC27C256 27c16 eprom 27C16 27C256 27C512 27C64 NMC27CP128Q200
    Text: NMC27CP128 NATL SEMICOND {MEMORY} IDE D | b S Q H E b - _- OOt.l4fl4 □ | f_46-13-29 National Semiconductor NMC27CP128 131,072-Bit 16k x 8 UV Erasable CMOS PROM ) . General Description Features The NMC27CP128 is a high-speed 128k UV erasable and


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    PDF f-46-13-29 NMC27CP128 072-Bit NMC27CP128 28-pin 27c32 NMC27CP1280 NMC27C256 27c16 eprom 27C16 27C256 27C512 27C64 NMC27CP128Q200

    27128 block diagram

    Abstract: No abstract text available
    Text: NM27C128 National Semiconductor NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C120 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manu­ factured with National’s latest CMOS split gate EPROM


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    PDF NM27C128 NM27C128 072-Bit NM27C120 100ns 27128 block diagram

    27C512-70

    Abstract: 1N3064 27C512 27C512-150 CY27C512 CY27C512-150WC
    Text: ?/ CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the


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    PDF CY27C512 -32-pin 28-pin 28-pin, 600-mil 32-pin 27C512-70 1N3064 27C512 27C512-150 CY27C512-150WC