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    27BSC Search Results

    27BSC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    27BSC Semtech Silicon Planar Zener Diode Scan PDF

    27BSC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SEMTECH 11BSC

    Abstract: 5v6bsb colour code diode zener SEMTECH 11BSB 27BSB 20BSB 10BS 10BSA 10BSB 11BS
    Text: BS Series min. 27.5 SILICON PLANAR ZENER DIODES max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.45 Glass case JEDEC DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Power Dissipation Symbol Ptot Value Unit 1)


    Original     		PDF DO-34 36BSB 36BSC 36BSD 39BSA 39BSB 39BSC 39BSD SEMTECH 11BSC 5v6bsb colour code diode zener SEMTECH 11BSB 27BSB 20BSB 10BS 10BSA 10BSB 11BS

    30BSD

    Abstract: 27BSB 3v3bs 20BSB BS Series 10BSB 10BSC 11BS 11BSA 11BSB
    Text: BS Series SILICON PLANAR ZENER DIODES Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Power Dissipation Ptot Value Unit 1) mW 500


    Original     		PDF DO-34 36BSB 36BSC 36BSD 39BSA 39BSB 39BSC 39BSD 30BSD 27BSB 3v3bs 20BSB BS Series 10BSB 10BSC 11BS 11BSA 11BSB

    27BSB

    Abstract: 20BSB 22bsc 6.2BSB 12bsb 20bsc 8.2BSB 10BS 10BSA 10BSB
    Text: BZM55C-BS SERIES 4.7V to 36V SILICON PLANAR ZENER DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * LS-31 Micro-melf Glass Package .0 53 m (1. ax 35 ) . MICRO-MELF .049 (1.25) DIA. .047 (1.20) R > 2.5 Glass .083 (2.10) .075 (1.90) .010 (0.26) .008 (0.21)


    Original     		PDF BZM55C-BS LS-31 27BSB 20BSB 22bsc 6.2BSB 12bsb 20bsc 8.2BSB 10BS 10BSA 10BSB

    4947

    Abstract: 2gb2 ANPEC 27BSC APM4947
    Text: APM4947 Dual P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-2.5A , RDS ON =90mΩ(typ.) @ VGS=-10V • • • 5 RDS(ON)=145mΩ(typ.) @ VGS=-4.5V  / Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged & , %


    Original     		PDF APM4947 -30V/-2 4947 2gb2 ANPEC 27BSC APM4947

    BZV55C

    Abstract: 20BSB 10BSB zener diode 4.7V datasheet 10BS 10BSA 10BSC 11BS 11BSA BZV55-C
    Text: BZV55C-BS SERIES 4.7V to 36V SILICON PLANAR ZENER DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * LL-34 Mini-MELF Package * Hermetically Sealed, Glass Silicon Diodes SOD-80C .059(1.50) .056(1.42) R.004(0.10) .112(0.30) .112(0.30) .057(1.45) .053(1.35)


    Original     		PDF BZV55C-BS LL-34 OD-80C BZV55C 20BSB 10BSB zener diode 4.7V datasheet 10BS 10BSA 10BSC 11BS 11BSA BZV55-C

    ANPEC

    Abstract: Anpec Electronics APM9935 9935 mosfet A999 27BSC APM9935K MARKING CODE 9935
    Text: APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -20V/-6A, RDS ON =45mΩ(max.) @ VGS=-4.5V 5 RDS(ON)=65mΩ(max.) @ VGS=-2.5V  / Super High Dense Cell Design for Extremely & , % , Low RDS(ON) 5 ! $ , Reliable and Rugged


    Original     		PDF APM9935 -20V/-6A, ANPEC Anpec Electronics APM9935 9935 mosfet A999 27BSC APM9935K MARKING CODE 9935

    zener 6c2

    Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
    Text: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		PDF BZX84C-BS OT-23 OT-23 MIL-STD-202E zener 6c2 sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C

    27BSB

    Abstract: 3.9BS 39BSB 10BSB 20BSB 10BS 10BSA 10BSC 11BS 11BSA
    Text: BS Series SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Zener Current see table “Characteristics” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.


    Original     		PDF 30BSD 33BSA 33BSB 33BSC 33BSD 36BSA 36BSB 39BSC 36BSD 39BSA 27BSB 3.9BS 39BSB 10BSB 20BSB 10BS 10BSA 10BSC 11BS 11BSA

    27BSB

    Abstract: 20BSB 24BSB 3.9BS 4.7BSB 6.2BSB 10BS 10BSA 8.2BS 10BSC
    Text: BS Series SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Zener Current see table “Characteristics” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.


    Original     		PDF 30BSD 33BSA 33BSB 33BSC 33BSD 36BSA 36BSB 39BSC 36BSD 39BSA 27BSB 20BSB 24BSB 3.9BS 4.7BSB 6.2BSB 10BS 10BSA 8.2BS 10BSC

    27BSB

    Abstract: 3v3bs 22bsc 20BSB 39bsb 10BS 10BSA 10BSB 10BSC 11BS
    Text: BS Series min. 27.5 SILICON PLANAR ZENER DIODES max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.45 Glass case JEDEC DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Power Dissipation Symbol Ptot Value Unit 1)


    Original     		PDF DO-34 30BSC 30BSD 33BSA 33BSB 33BSC 33BSD 36BSA 36BSB 36BSC 27BSB 3v3bs 22bsc 20BSB 39bsb 10BS 10BSA 10BSB 10BSC 11BS

    ANPEC

    Abstract: APM4429 Anpec Electronics diode marking H2
    Text: APM4429 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-13A, RDS ON = 8mΩ(typ.) @ VGS = -20V 5 RDS(ON) = 9mΩ(typ.) @ VGS = -10V RDS(ON) =13mΩ(typ.) @ VGS = -4.5V • • •  5 Super High Density Cell Design & , % , 5 ! $ , / "


    Original     		PDF APM4429 -30V/-13A, ANPEC APM4429 Anpec Electronics diode marking H2

    Untitled

    Abstract: No abstract text available
    Text: APR 7 1993 Comlinear Corporation Ultra Low Noise Wideband Op Amp Preliminary CLC425 APPLICA TIO NS: FEATURES typical : • • • • • • • • • • • • • • • • instrum entation sense am plifiers ultrasound pre-am ps m agnetic tape & disk pre-am ps


    OCR Scan     		PDF CLC425 05nV/VHz 50V/ns 00V/V CLC425

    2n3817

    Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
    Text: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEON. ^AYTUFnin RAYTHEON J 0005557 S E M IC O N D U C T O R 94D 05527 Low Level, Low Noise D j - z - f - Z ' l H j g h G a j n A m p | j f ¡e r s Popular Types Description G eneral purpose a m p lifier for low level, low noise and high gain amplifier


    OCR Scan     		PDF 75T73fc 2604/JA 2605/JA 54BSC O-116) 14-Lead 100BSC 2n3817 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn

    Untitled

    Abstract: No abstract text available
    Text: 1 Chip CODEC for Digital Answering phone KS8620 INTRODUCTION The KS8620 consists of on-chip PCM encoders, decoders PCM CODECs and PCM line filter. This 16-DIP-300 device provide all the functions required to interface a fullduplex voice telephone circuit, digital answering phone.


    OCR Scan     		PDF KS8620 KS8620 16-DIP-300 16-SOP-BD300 -40dBm0 7Tb4142 003blfl5 16-SOP-BD300-SG 27BSCl

    Untitled

    Abstract: No abstract text available
    Text: i 8 '.991 Product Specifications Linear Integrated RV4145 Raytheon RV4145 Low Power Ground Fault Interrupter Contained internally are a 26V zener shunt regulator, an op amp, and a SCR driver. With the addition of two sense transformers, a bridge


    OCR Scan     		PDF RV4145 5-1840A

    HY5117404A

    Abstract: HY5117404Aj
    Text: HYUNDAI HY5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117404A Y5117404A q0083 27BSC 1AD38-10-MAY95 5117404AJ HY5117404ASLJ HY5117404Aj

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF

    2N2937

    Abstract: 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484
    Text: RAYTHEON/ "ä ? SEMICONDUCTOR 7597360 D eT | 7 5 ^ 7 3 ^ 0 G G D B S a S Ì 27C RAYTHEON CO» D Low Level, Low Noise, High Gain Amplifiers RAYTHEON CL 0353 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS NPN Popular Types Description General purpose am plifier for low


    OCR Scan     		PDF 2N930/JAN 2N2484/JAN 2N3117 2N930JAN 2N2484JAN 54BSC 27BSC 100BSC 050BSC -100BSC 2N2937 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484

    CLC402A

    Abstract: No abstract text available
    Text: Low-Gain Op Amp with Fast 14-Bit Settling APPLICATIONS: FEATURES typical : • • • • • • • • • • high-accuracy A/D system s (12-14 bits) high-accuracy D/A converters high-speed com m unications IF signal processing video distribution CLC402


    OCR Scan     		PDF 14-Bit CLC402 150mW CLC402 OA-12 OA-15. CLC402A

    Untitled

    Abstract: No abstract text available
    Text: KT8554B/7B 1 CHIP CODECS INTRODUCTION 16-CERDIP The KT8554B/7B are single-chip PCM encoders and decoders PCM CODECs and PCM line filters. These devices provide all the functions required to interface a full-duplex voice telephone circuit with a time-division-multiplex (TDM)


    OCR Scan     		PDF KT8554B/7B 16-CERDIP KT8554B/7B 048MHz 16-SOP-BD300-SG 27BSCl Q03b302

    Untitled

    Abstract: No abstract text available
    Text: RAYTHEON/ SEMICONDUCTOR 33E D • 7S^73t,Q □□07471 1 B f R T N Product Specifications Sm all S ign a l Transistors C B NPN R a y tfe & o a i 1 7=-27-2 p * 7~-27-27 Medium Current General Purpose Amplifiers and Switches C B NPN Description General purpose medium power amplifier and


    OCR Scan     		PDF 500mA. 2N2222A/JAN 2N2221A/JAN 2N2219A/JAN 2N2218A/JAN 968-9211um T-27-27 O-116) 14-Lead 100BSC

    Untitled

    Abstract: No abstract text available
    Text: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran­


    OCR Scan     		PDF 100mA. 2N2369A/JAN 2N4137 2N706A 2N2368 27BSC -050BSC 54BSC

    Untitled

    Abstract: No abstract text available
    Text: _ i _ s-RAYTHEON/ bb SEMICONDUCTOR d e Its ^ L iO DOOSOñi O T - 3 7~<5Product Specifications Sm all Signal Transistors G A PNP Raytheon Low Level, General Purpose Amplifiers and Switches Description G A PNP General purpose low power amplifier and


    OCR Scan     		PDF 100mA. 2N3250A/JAN 2N3251A/JAN 5-1022A DDDS01S 27BSC 254BSC 050BSC 100BSC

    sp3725

    Abstract: 2N3252 raytheon 2n
    Text: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEO N. D E | ? 5 c173t.D 0 0 0 5 5 3 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS S E M IC O N D U C T O R 94D 05535 High Current, High Speed Switches RAYTHEON D T -ss*-/ 7 Popular Types Description T he CK is a gold doped transistor


    OCR Scan     		PDF 3724/A 3725/A 3735/JA 2N3736 3737/JAN 2N4013 2N4014 2N4013, 2N3724 54BSC sp3725 2N3252 raytheon 2n