marking code vishay label
Abstract: Vishay 0414 resistor cecc 40101-806 vishay 0204 MBA020
Text: MBA/SMA 0204 VG06, MBB/SMA 0207 VG06, MBE/SMA 0414 VG06 Vishay Beyschlag Leaded Resistors with Established Reliability CECC 40101-806, Version E FEATURES • Approved according to CECC 40101-806, version E • • • • • MBA/SMA 0204 VG06, MBB/SMA 0207 VG06
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08-Apr-05
marking code vishay label
Vishay 0414 resistor
cecc 40101-806
vishay 0204
MBA020
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pure sinus inverter circuit diagram
Abstract: 3 phase motor soft starter circuit diagram ST7FLI19BF1U6 ATIC 64 soft starter for single phase induction motor JRC 5002 16 PIN PIR SENSOR IC PINOUT 702 TRANSISTOR smd 702 Z TRANSISTOR smd c02 sensor
Text: ST7LITE1xB 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI Memories – up to 4 Kbytes single voltage extended Flash XFlash Program memory with read-out protection, In-Circuit Programming and In-Application programming (ICP and IAP). 10K write/
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Untitled
Abstract: No abstract text available
Text: BPW83 Vishay Semiconductors Silicon PIN Photodiode Description BPW83 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .
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BPW83
BPW83
2002/95/EC
18-Jul-08
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74297
Abstract: SUM52N20-39P SUM52N20-39P-E3
Text: SUM52N20-39P Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.038 at VGS = 15 V 52 0.039 at VGS = 10 V 52 Qg (Typ) 81 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested
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SUM52N20-39P
O-263
SUM52N20-39P-E3
08-Apr-05
74297
SUM52N20-39P
SUM52N20-39P-E3
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74398
Abstract: Si1972DH Si1972DH-T1-E3
Text: Si1972DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS 0.91 nC SOT-363 SC-70 (6-LEADS)
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Si1972DH
OT-363
SC-70
Si1972DH-T1-E3
08-Apr-05
74398
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74344
Abstract: SI4388DY
Text: Si4388DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 Channel-2 rDS(on) (Ω) 0.016 at VGS = 10 V 0.024 at VGS = 4.5 V 0.015 at VGS = 10 V 0.017 at VGS = 4.5 V 30 30 ID (A)a 10.7
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Si4388DY
08-Apr-05
74344
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Si1970DH
Abstract: No abstract text available
Text: SPICE Device Model Si1970DH Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1970DH
18-Jul-08
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74347
Abstract: 74347 datasheet si4674
Text: SPICE Device Model Si4674DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4674DY
18-Jul-08
74347
74347 datasheet
si4674
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SUM40N10-30
Abstract: No abstract text available
Text: SPICE Device Model SUM40N10-30 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM40N10-30
18-Jul-08
SUM40N10-30
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74418
Abstract: TX+315+wxc-810 s-video composite vga s-video 8 pin to composite Tx_315 DG2707
Text: SDG2707 Vishay Siliconix Differential 4:1 Multiplexer DESCRIPTION FEATURES • Low Voltage Operation 2.8 V to 3.6 V The SDG2707 is a DIFFERENTIAL 4 to 1 MULTIPLEXER designed for high performance mix signal switching. It is configured to handle VGA… signals. To optimize the switch signal integrity, there are two types of switching elements in the
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SDG2707
SDG2707
18-Jul-08
74418
TX+315+wxc-810
s-video composite vga
s-video 8 pin to composite
Tx_315
DG2707
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S186P
Abstract: No abstract text available
Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters λ p ≥ 900 nm .
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S186P
S186P
08-Apr-05
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BPW77NA
Abstract: BPW77NB BPW77N
Text: BPW77N Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ± 10° makes it insensible to ambient straylight.
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BPW77N
BPW77N
08-Apr-05
BPW77NA
BPW77NB
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BPW96
Abstract: BPW96A BPW96B BPW96C
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared
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BPW96
BPW96
2002/95/EC
2002/96/EC
08-Apr-05
BPW96A
BPW96B
BPW96C
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SUM110N04-02L
Abstract: No abstract text available
Text: SPICE Device Model SUM110N04-02L Vishay Siliconix N-Channel 40-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110N04-02L
S-62314Rev.
27-Nov-06
SUM110N04-02L
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marking code aj
Abstract: 74276
Text: Si1458DH Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.058 at VGS = 4.5 V 4.1a 0.082 at VGS = 2.5 V 3.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 4.85 RoHS APPLICATIONS
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Si1458DH
OT-363
SC-70
Si1458DH-T1-E3
08-Apr-05
marking code aj
74276
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Si1470DH
Abstract: Si1470DH-T1-E3 Si1470
Text: Si1470DH Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.066 at VGS = 4.5 V 4.0a 0.095 at VGS = 2.5 V 4.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 4.85 RoHS APPLICATIONS
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Si1470DH
OT-363
SC-70
Si1470DH-T1-E3
18-Jul-08
Si1470
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Si7326DN
Abstract: 74444 Si7326DN-T1-E3
Text: Si7326DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0195 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile
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Si7326DN
Si7326DN-T1-E3
08-Apr-05
74444
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R0100
Abstract: SR55L
Text: SR Vishay Dale Wirewound Resistors, Open Air, Current Sense, Low Value FEATURES • Open air design • Low resistance values for all types of current sensing, voltage division and pulse applications including switching and linear supplies, instrumentation and power amplifiers
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R0100
SR55L
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Untitled
Abstract: No abstract text available
Text: ST7LITE1xB 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI Memories – up to 4 Kbytes single voltage extended Flash XFlash Program memory with read-out protection, In-Circuit Programming and In-Application programming (ICP and IAP). 10K write/
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74344
Abstract: si4388
Text: Si4388DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 Channel-2 rDS(on) (Ω) 0.016 at VGS = 10 V 0.024 at VGS = 4.5 V 0.015 at VGS = 10 V 0.017 at VGS = 4.5 V 30 30 ID (A)a 10.7
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Si4388DY
Si4388DY-T1-E3
18-Jul-08
74344
si4388
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BPW76A
Abstract: BPW76 BPW76B
Text: BPW76 Vishay Semiconductors Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics.
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BPW76
BPW76
08-Apr-05
BPW76A
BPW76B
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BPW46
Abstract: No abstract text available
Text: BPW46 Vishay Semiconductors Silicon PIN Photodiode Description BPW46 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives
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BPW46
BPW46
2002/95/EC
2002/96/EC
08-Apr-05
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BPW16N
Abstract: CQY36N
Text: CQY36N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
CQY36N
BPW16N
08-Apr-05
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K612
Abstract: smith trigger T64 SERIES TERMINAL LOCK leonard 140ct98 8907 K61-2 ta 8907
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC ALL RIGHTS RESERVED. R E V IS IO N S DIST 00 AD LTR B DESCRIPTION REVISED PER EC -0G 3G -0005-05 DATE DWN APVD 27NOV06 GS MG - .0 1 0 c l+ ho o .375, I —
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EC-0G3G-0005-05
27NOV06
8907K292
14apr98
o0F10
31MAR2000
K612
smith trigger
T64 SERIES TERMINAL LOCK
leonard
140ct98
8907
K61-2
ta 8907
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