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    Fair-Rite Products Corp 2743019447

    FERRITE BEAD 53 OHM 2SMD 1LN
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    DigiKey 2743019447 Reel 392,000 2,800
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    Quest Components 2743019447 50,345
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    Central Technologies CT2743019447F

    FERRITE CHIP BEAD SMD
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    DigiKey CT2743019447F Reel 64,010 1
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    . 2743019447

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    Bristol Electronics 2743019447 735
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    Fairchild Semiconductor Corporation 2743019447

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    Bristol Electronics 2743019447 63,847
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    2743019447 922
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    Quest Components 2743019447 51,077
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    Central Technologies CT2743019447

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    2743019447 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2743019447 Fair-Rite Products SM Bead; Current Rating:5A; Resistance:0.6mohm; Package/Case:SMD; Ferrite Grade:43; Frequency:100MHz; Impedance:47ohm; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes Original PDF
    2743019447 Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    2743019447 Freescale Semiconductor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    2743019447 Freescale Semiconductor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    2743019447 Fair-Rite Products Over 600 obsolete distributor catalogs now available on the Datasheet Archive - EMI, Shield Bead, 47 Scan PDF
    2743019447 Fair-Rite Products Inductor: Bead: 47: 100M Scan PDF
    2743019447H Fair-Rite Products Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Chip and EMI Beads Scan PDF

    2743019447 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2013-07-03 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2014-06-11 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


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    2743019447 fair-rite

    Abstract: No abstract text available
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2009-01-16 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


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    Untitled

    Abstract: No abstract text available
    Text: Fair-Rite Catalog 2743019447LF | Page 1 of 6 Products Catalog Part Search: Technical Abo 2643168351 Lower & Broadband Frequencies 1-300 MHz 31 material Broadband Frequencies 25-300 MHz (43 material) Part Number: 2643168351 Frequency Range: Broadband Frequencies 25-300 MHz (43 material)


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    PDF 2743019447LF 2743019447LF

    2743019447

    Abstract: No abstract text available
    Text: Fair-Rite Products Corp. Catalog Page 1 of 3 Products Technical About Us Contact Us Catalog Part Search: Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz 43 & 44 materials Description: BDS2.9/3.1/4.7-43-1 43 SM BEAD Application:


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    2743019447

    Abstract: No abstract text available
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2010-11-09 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


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    AGR19045XF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


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    PDF AGR19045EF Hz--1990 AGR19045XF

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


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    PDF AGR21180EF TH 2190 HOT Transistor

    square d LC circuit breaker curves

    Abstract: MIC2590B MIC2590B-2BTQ MIC2590B-5BTQ
    Text: MIC2590B Dual-Slot PCI Hot Plug Controller General Description Features The MIC2590B is a power controller supporting power distribution requirements for Peripheral Component Interconnect PCI hot plug compliant systems incorporating the Intelligent Platform Management Interface (IPMI). The


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    PDF MIC2590B MIC2590B M9999-091808 square d LC circuit breaker curves MIC2590B-2BTQ MIC2590B-5BTQ

    6603 Shenzhen

    Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
    Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


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    PDF AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor

    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


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    PDF AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157

    transistor 7350

    Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
    Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


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    PDF AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


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    PDF MRF6P9220H MRF6P9220HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


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    PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


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    PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    e140 transformer

    Abstract: transformer E166 e141 transformer toshiba e225 Transformer E140 Fairchild E212 ADP3330ART-3.3 E212 transistor AD10242 AD10465
    Text: a Dual Channel, 14-Bit, 65 MSPS A/D Converter with Analog Input Signal Conditioning AD10465 FEATURES Dual, 65 MSPS Minimum Sample Rate Channel-to-Channel Matching, ؎0.5% Gain Error Channel-to-Channel Isolation, >90 dB DC-Coupled Signal Conditioning Included


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    PDF 14-Bit, AD10465 AD10465 C02356 68-Lead e140 transformer transformer E166 e141 transformer toshiba e225 Transformer E140 Fairchild E212 ADP3330ART-3.3 E212 transistor AD10242

    motorola MOSFET 935

    Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP
    Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices


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    PDF MRF184/D MRF184 MRF184S motorola MOSFET 935 XRF184 MRF184S 173 MHz RF CHIP

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


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    PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    Z9 TRANSISTOR SMD

    Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
    Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


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    PDF AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8

    mosfet j172

    Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


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    PDF MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X

    ICS5342

    Abstract: No abstract text available
    Text: ICS5342 GENDAC 16-Bit Integrated Clock-LUT-DAC General Description Features The ICS5342 GENDAC is a combination of dual programmable clock generators, a 256 x 18-bit RAM, and a triple 8-bit video DAC. The GENDAC supports 8-bit pseudo color applications, as well as 15-bit, 16-bit, and 24-bit True Color bypass


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    PDF ICS5342 16-Bit ICS5342 18-bit 15-bit, 16-bit, 24-bit

    SD3932

    Abstract: pF CAPACITOR 100v 700B
    Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC


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    PDF SD3932 2002/95/EC SD3932 250MHz. pF CAPACITOR 100v 700B

    pal22v10h

    Abstract: MM74HC245AWM 96F8740 PCC473BCTND MC68340 PM4314 PM4388 PM6344 PM7364 PM7375
    Text: PM4388 TOCTL PRELIMINARY INFORMATION REFERENCE DESIGN PMC-980942 ISSUE 1 CABGA TOCTL WITH FREEDM-32 REFERENCE DESIGN PM4388 CABGA TOCTL WITH FREEDM-32 REFERENCE DESIGN PRELIMINARY INFORMATION ISSUE 1: SEPT 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE


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    PDF PM4388 PMC-980942 FREEDM-32 PM4388 FREEDM-32 pal22v10h MM74HC245AWM 96F8740 PCC473BCTND MC68340 PM4314 PM6344 PM7364 PM7375

    2743037447

    Abstract: 2744555577 2773019447 2773021447 PO 118 2743019447 2744044447 2744555567
    Text: 49 15th E d itio n S M B e a d s D iffe re n tia l-M o d e Lower Frequencies < 50 MHz (73 material) Part Number Typical impedanceCi) 1 MHZ 5 MHz 10 MHz* 25 MHZ* Max Rdc<m-4 2773019447 12 25 31 40 OS 2773021447 25 50 60 78 12 2773037447 25 50 60 78 12 2773044447


    OCR Scan
    PDF 177uencies -74S3 2743037447 2744555577 2773019447 2773021447 PO 118 2743019447 2744044447 2744555567