Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2716 2K EPROM 24 PIN Search Results

    2716 2K EPROM 24 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097BH/BZA Rochester Electronics LLC Microcontroller, 16-Bit, EPROM, 12MHz, NMOS, CPGA68, CERAMIC, PGA-68 Visit Rochester Electronics LLC Buy
    MG8097BH Rochester Electronics LLC Microcontroller, 16-Bit, EPROM, 12MHz, HMOS, CPGA68, CERAMIC, PGA-68 Visit Rochester Electronics LLC Buy
    D2716 Rochester Electronics LLC EPROM Visit Rochester Electronics LLC Buy
    MC2716M/BJA Rochester Electronics LLC 2716M - 2Kx8 EPROM - Dual marked (7802201JA) Visit Rochester Electronics LLC Buy
    D2716-1 Rochester Electronics LLC 2716 - 2K X 8 EPROM Visit Rochester Electronics LLC Buy

    2716 2K EPROM 24 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2716 eprom

    Abstract: GR281 2716* eprom GR281, 2K x 8
    Text: GR281 Page 1 of 2 GR281 .23rd April 1999 DESCRIPTION The GR281 is a 2048 word by 8 bits 2K x 8 non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.The pin-out of the GR281 conforms to the JEDEC standards and is fully compatible with normal static RAM.The


    Original     		PDF GR281 GR281 com/gr281 2716 eprom 2716* eprom GR281, 2K x 8

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 720-mil A0-A10 100ns 120ns

    DS1220

    Abstract: DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		PDF DS1220Y DS1220Y DS1220 DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas

    dallas date code DS1220AD

    Abstract: No abstract text available
    Text: 19-5580; Rev 10/10 DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com PIN ASSIGNMENT FEATURES • •          10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) MDT24 dallas date code DS1220AD

    CI EEPROM 2816

    Abstract: eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y DS1220Y-100 DS1220Y-120
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		PDF DS1220Y DS1220Y 24-PIN CI EEPROM 2816 eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y-100 DS1220Y-120

    2816 eeprom

    Abstract: CI EEPROM 2816 eeprom 2816 CI EPROM 2816 2816 eprom EEPROM 2816 DATASHEET 2716 eprom datasheet DS1220Y DS1220Y-100 DS1220Y-120
    Text: DS1220Y 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1220Y 24-pin 720-mil 100pF DS1220Y 24-PIN 2816 eeprom CI EEPROM 2816 eeprom 2816 CI EPROM 2816 2816 eprom EEPROM 2816 DATASHEET 2716 eprom datasheet DS1220Y-100 DS1220Y-120

    2816 eeprom

    Abstract: CI EEPROM 2816 DS1220Y-120 DS1220Y DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 24-ONS 100pF DS1220Y 720-MIL 24-PIN 2816 eeprom CI EEPROM 2816 DS1220Y-120 DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom

    DS1220

    Abstract: DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD DS1220AD-100 DS1220AD-120 ICC01 2716 eprom
    Text: DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) 100ns 120ns DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD DS1220AD-100 DS1220AD-120 ICC01 2716 eprom

    Untitled

    Abstract: No abstract text available
    Text: DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) 100ns 120ns

    DS1220

    Abstract: DS1220AB DS1220AD ICC01
    Text: DS1220AB/AD DS1220AB/AD 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		PDF DS1220AB/AD pin24 DS1220AB/AD DS1220 DS1220AB DS1220AD ICC01

    intel 2716

    Abstract: 2716 EPROM 24 PINS LM6417E eprom 2716 LM6402H LM6402 2716 2k eprom LM6416E LM6416 LM8416
    Text: L M 6 4 P G 9 9 ,9 8 ,9 7 No. 1248 CHIPS FOR EVALUATING N MOS 4-BIT SINGLE-CHIP MICROCOMPUTER LM6400 SERIES SYSTEM SA N Y O 1. General Description The LM64PG99/98/99 are system evaluation chips Intended for application development tools of 4-blt ilngle-chip


    OCR Scan     		PDF LM64PG99 LM6400 LM64PG99/98/99 LM04OO LM64O0 LM6402/05A, LM84PG98 LM6413E LMB4PG97 intel 2716 2716 EPROM 24 PINS LM6417E eprom 2716 LM6402H LM6402 2716 2k eprom LM6416E LM6416 LM8416

    LC6502

    Abstract: LC6505C CSB400P LC6502B LC6500 2716 TI eprom LC6599 LC65PG99 KBR-400B eprom 2532
    Text: No. 1247 LC65PG99 I I CHIP FOR EVALUATING C MOS 4-BIT SINGLE-CHIP MICROCOMPUTER LC6500 SERIES S AN VO 1. General Description The LC65PG99 is a simulation chip intended for use in evaluating C MOS 4-bit single-chip microcomputer LC6500 series. With a 24-pin socket for program EPROM provided on the package surface, it is designed to facilitate the develop­


    OCR Scan     		PDF LC65PG99 LC6500 24-pin 7T17Q7b 0D17t LCC5PG90 LC6502 LC6505C CSB400P LC6502B 2716 TI eprom LC6599 KBR-400B eprom 2532

    2316 rom

    Abstract: 2516 2k eprom 2316 8 bit rom memory rom 2316 2316 EPROM TA-350 ground eeprom 2716 2716 eeprom 27C58 ROM 2316
    Text: MV23SC16 _ ADVANCE INFORMATION P .M T K Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have ‘pre-production’ status. Details given may, therefore, change without notice although we would expect this performance data to


    OCR Scan     		PDF MV23SC16 MV23SC16 16384-bit 16364-bit 27C58) MV23SC16-012 2316 rom 2516 2k eprom 2316 8 bit rom memory rom 2316 2316 EPROM TA-350 ground eeprom 2716 2716 eeprom 27C58 ROM 2316

    GR2732

    Abstract: IC 2732 ROM 2764 GREENWICH INSTRUMENTS USA 2732 rom 4K GR2716 GR2764 ROM 2764 2732 eprom
    Text: G R E E N W IC H IN S T R U M E N T S LT» 4 tE 412477*4 0 0 0 0 0 0 4 D SYMBOL MIN -0.3 -0.3 -1 0 Vdd V i/0 Temp. MAX UNIT 7.0 Vdd + 0.3 + 60 Volts Volts deg. C OPERATING CONDITIONS SYMBOL Vdd Vin 1 V in ( 0 ) lin (any pin)* V o u tO ) ( lo u t = _ 1 V o u t( 0 ) ( lo u t


    OCR Scan     		PDF 24-pin 28-pin GR2716/2732/2764 GR2716 GR2732 GR2732 IC 2732 ROM 2764 GREENWICH INSTRUMENTS USA 2732 rom 4K GR2716 GR2764 ROM 2764 2732 eprom

    6716

    Abstract: ic 2716 eprom 2716 2k eprom HM-6716 2k x 8 EPROM harris QC02 eprom 2716 HM-6758 harris eprom harris hm-6716
    Text: HARRIS U li HM-6716 SEM ICO N D U CTO R P R O D U C T S DIVISION A DIVISION OF HARRIS CORPORATION 2K x 8 C M O S U V E P R O M Preview Pinout Features TO P V IE W SUPER LOW POW ER S T A N D B Y 5 0 0 /iW M A X . IN D U S T R Y S T A N D A R D P IN O U T 1


    OCR Scan     		PDF HM-6716 500/iW 50mW/MHz 350ns HM-6716 HM-6758, 6716 ic 2716 eprom 2716 2k eprom 2k x 8 EPROM harris QC02 eprom 2716 HM-6758 harris eprom harris hm-6716

    rom 2716

    Abstract: eprom 2716 memory 2716 2716 ROM intel 8085 2716s 2716 2716 eprom intel 2716 eprom 2716A
    Text: in te i 16K 2K X m 12716 8 UV ERASABLE PROM INDUSTRIAL Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse Fast Access Time: 450 ns Max • Industrial Grade Temperature Range: - 4 0 8C t o + 8 5 ° C ■ Single + 5V Power Supply


    OCR Scan     		PDF 384-bit I2716operates rom 2716 eprom 2716 memory 2716 2716 ROM intel 8085 2716s 2716 2716 eprom intel 2716 eprom 2716A

    2716A EPROM

    Abstract: 2716A eprom 2716a
    Text: SGS-THOMSON *7#. G NMOS 16K 2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525 mW Max ACTIVE POWER, 132 mW Max STANDBY POWER ■ ACC ESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS AND O U TPU TS TTL COMPATIBLE


    OCR Scan     		PDF M2716-1 350ns M2716 450ns VA30767 M2716 FDIP24W 2716A EPROM 2716A eprom 2716a

    gr281

    Abstract: static ram 4802 pd446 4016 RAM
    Text: GREENWICH INSTRUMENTS USA • Plug-in replacement for Static RAM • 10 years data retention • No erasure required • Fast power down • Functions as Data or Program RAM • No limit to number of programming cycles • Standard 24-pin JEDEC pinout GR281 is 2 kilobyte of non-volatile memory which is pin-compatible


    OCR Scan     		PDF 24-pin GR281 static ram 4802 pd446 4016 RAM

    ram 8416

    Abstract: No abstract text available
    Text: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout


    OCR Scan     		PDF GR281-4 24-pin GR281 PD446 ram 8416

    intel 2732 eprom

    Abstract: intel 2732 2732 eprom IC 2732 pin diagram of ic 2732 pin diagram of ic 2764 4Kx8 rom ttl eprom 2732 ram 2732 2kx8 sram
    Text: A O M IN ! OMIF©fôlîMïrD@Kl in te i 2048 X 2K X 8 8-BIT STATIC RAM Fully Static Operation; No Clocks, Refresh or Latches Two Line Control, CE Controls PowerDown, OE Controls Output Buffers — Eliminates Bus Contention EPROM Compatible Pinout 150 ns Maximum Access Time


    OCR Scan     		PDF 24-Pin 384-bit 28-pin The2732s 2732s. 2732s intel 2732 eprom intel 2732 2732 eprom IC 2732 pin diagram of ic 2732 pin diagram of ic 2764 4Kx8 rom ttl eprom 2732 ram 2732 2kx8 sram

    eprom 2716

    Abstract: P7q-P73 PD7227 7507H eprom 2732 upD757 PD7507HC nec 2716 eprom PD7500 7S08H
    Text: jk / X V " * IfH é W A/PD7507H/08H/75CG08HE 4-Bit, Single-Chip CMOS Microcomputers NEC Electronics Inc. Description The aiPD7507H, //PD7508H, and //PD75CG08HE are pin-compatible, high-speed (4.19 MHz , 4-bit, single­ chip CMOS microcomputers with the//PD7500 series


    OCR Scan     		PDF uPD7507H uPD7508H uPD7575CG08HE aiPD7507H, //PD7508H, //PD75CG08HE the//PD7500 //PD7507H //PD7508H //PD7500 eprom 2716 P7q-P73 PD7227 7507H eprom 2732 upD757 PD7507HC nec 2716 eprom PD7500 7S08H

    intel 2732 eprom

    Abstract: 2716 EPROM 24 PINS 2716 eprom eprom 2716 intel 2716 memory 2716 intel 2716 eprom rom 2716 2716 2716 2k eprom
    Text: in te i 2716* 16K 2K x 8 UV ERASABLE PROM • Fast Access Time — 350 ns Max. 2716-1 — 390 ns Max. 2716-2 — 450 ns Max. 2716 — 490 ns Max. 2716-5 — 650 ns Max. 2716-6 ■ Pin Compatible to Intel 2732 EPROM ■ Single + 5V Power Supply ■ Inputs and Outputs TTL Compatible


    OCR Scan     		PDF 384-bit 2716s. 2716s intel 2732 eprom 2716 EPROM 24 PINS 2716 eprom eprom 2716 intel 2716 memory 2716 intel 2716 eprom rom 2716 2716 2716 2k eprom

    Untitled

    Abstract: No abstract text available
    Text: MPU 830 MPU 831 STANDARD MICROSYSTEMS CORPORATION, PRELIMINARY MPU 830 ROM I/O Device MPU 831 I/O Device FEATURES □ □ □ □ □ □ □ □ □ PIN CONFIGURATION Variable Power Supply: 2.4V-6.0V Pin-Compatible With NSC830/NSC831 Three Programmable I/O Ports


    OCR Scan     		PDF NSC830/NSC831 MPU830) MPU800 2708s C123-45

    1220Y

    Abstract: DS1220
    Text: DS1220Y DALLAS SEM ICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF DS1220Y DS1220Y 24-PIN A0-A10 1220Y DS1220