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    Vishay Intertechnologies PSF4527162K0BZBA

    PSF4527 162K .1% T-16 B43 - Bulk (Alt: PSF4527162K0BZBA)
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    Vishay Intertechnologies PSF4527162K0BZEA

    PSF4527 162K .1% T-16 EA e3 - Tape and Reel (Alt: PSF4527162K0BZEA)
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    Vishay Intertechnologies PSF4527162K0BXEA

    PSF4527 162K .1% T-10 EA e3 - Tape and Reel (Alt: PSF4527162K0BXEA)
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    Vishay Intertechnologies PSF4527162K0DYBA

    PSF4527 162K .5% T-13 B43 - Bulk (Alt: PSF4527162K0DYBA)
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    Vishay Intertechnologies PSF4527162K0DYEK

    PSF4527 162K .5% T-13 EK e3 - Bulk (Alt: PSF4527162K0DYEK)
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    Avnet Americas PSF4527162K0DYEK Bulk 40 Weeks 100
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    Find more 2716 2K price and stock on Findchips.com

    2716 2K Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    intel 2732 eprom

    Abstract: 2716 EPROM 24 PINS 2716 eprom eprom 2716 intel 2716 memory 2716 intel 2716 eprom rom 2716 2716 2716 2k eprom
    Text: in te i 2716* 16K 2K x 8 UV ERASABLE PROM • Fast Access Time — 350 ns Max. 2716-1 — 390 ns Max. 2716-2 — 450 ns Max. 2716 — 490 ns Max. 2716-5 — 650 ns Max. 2716-6 ■ Pin Compatible to Intel 2732 EPROM ■ Single + 5V Power Supply ■ Inputs and Outputs TTL Compatible


    OCR Scan     		384-bit 2716s. 2716s intel 2732 eprom 2716 EPROM 24 PINS 2716 eprom eprom 2716 intel 2716 memory 2716 intel 2716 eprom rom 2716 2716 2716 2k eprom PDF

    ic 2716 eprom

    Abstract: ic 2716 pin diagram of ic 2716 2716 IC 27C12B 27C512V 2716 EPROM 24 PINS 2716 EPROM 2716 memory 2716
    Text: intei 2716 16K 2K x 8 UV ERASABLE PROM • Fast Access Time — 2716-1: 350 ns Max — 2716-2: 390 ns Max — 2716: 450 ns Max ■ Pin Compatible to Intel “Universal Site” EPROMs _ Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse


    OCR Scan     		384-bit ic 2716 eprom ic 2716 pin diagram of ic 2716 2716 IC 27C12B 27C512V 2716 EPROM 24 PINS 2716 EPROM 2716 memory 2716 PDF

    eprom 2716

    Abstract: 2716 eprom intel 2716 intel 2716 eprom 2716 2k eprom 2764AI 2716 memory 2716 2716 IC 2716 EPROM 24 PINS
    Text: intei 2716 16K 2K x 8 UV ERASABLE PROM Fast Access Time -2 7 1 6 -1 : 350 ns Max -2 7 1 6 -2 : 390 ns Max — 2716: 450 ns Max Pin Compatible to Intel “Universal Site” EPROMs Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse


    OCR Scan     		384-bit eprom 2716 2716 eprom intel 2716 intel 2716 eprom 2716 2k eprom 2764AI 2716 memory 2716 2716 IC 2716 EPROM 24 PINS PDF

    eprom 2716

    Abstract: 2716 eprom ic 2716 intel 2716 eprom 2764ai 2716 2k eprom 2716 2716 IC 2716 EPROM 24 PINS memory 2716
    Text: intei 2716 16K 2K x 8 UV ERASABLE PROM Fast Access Time - 2 7 1 6 -1 : 350 ns Max - 2 7 1 6 -2 : 390 ns Max — 2716: 450 ns Max Pin Compatible to Intel “Universal Site” EPROMs Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse


    OCR Scan     		384-bit eprom 2716 2716 eprom ic 2716 intel 2716 eprom 2764ai 2716 2k eprom 2716 2716 IC 2716 EPROM 24 PINS memory 2716 PDF

    Untitled

    Abstract: No abstract text available
    Text: rZ J SGS'THOMSON ^7 # E ülD »[llLll @ (M a(@ i M 2716 NMOS 16K (2Kx 8 UV EPROM • 2048x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED


    OCR Scan     		2048x 525mW 132mW M2716-1 350ns M2716 450ns PDF

    M2716-1F1

    Abstract: M2716F1 M2716-F1 SGS-THOMSON M2716F1 et2716 eprom ET2716Q
    Text: SGS-THOMSON G ì, ET2716 M 2716 mi 16K 2K x 8 NMOS UV EPROM 2048 x 8 ORGANIZATION. 525 MW MAX ACTIVE POWER, 132 MW MAX STANDBY POWER. ACCESS TIME M/ET2716-1,350 ns ; M/ET2716, 450 ns. SINGLE 5V SUPPLY. STATIC-NO CLOCKS REQUIRED. INPUTS AND OUTPUTS TTL COMPATIBLE


    OCR Scan     		ET2716 M/ET2716-1 M/ET2716, M/ET2716 24-pin M/ET2716 T2716Q ET2716Q-1 M2716F1 M2716-1F1 M2716-F1 SGS-THOMSON M2716F1 et2716 eprom ET2716Q PDF

    ic rom 27128

    Abstract: 27512 27LV010 ic 2716 27010 27512 data sheet IC 2732 rom 2716 2732 rom 8K 27040
    Text: WICE-M4 4MB ROM EMULATOR Supported Devices Capacity Quantity Low voltage Device Device Features 2K 8 2 2716 - 4K 8 2 2732 - 8K 8 2 2764 - 16K 8 2 27128 27LV128 32K 8 2 27256 27LV256 64K 8 2 27512 27LV512 128K 8 2 27010 27LV010 256K 8 2 27020 27LV020 512K 8


    Original     		27LV128 27LV256 27LV512 27LV010 27LV020 27LV040 9X/ME/2000/XP 5000m ic rom 27128 27512 27LV010 ic 2716 27010 27512 data sheet IC 2732 rom 2716 2732 rom 8K 27040 PDF

    CDFP4-F24

    Abstract: HM-6617 HS1-6617RH-8 HS1-6617RH-Q HS-6617RH HS-80C85RH HS-80C86RH
    Text: HS-6617RH Radiation Hardened 2K x 8 CMOS PROM August 1995 Features • • • • • • • • • • • • • • • Pinouts 5 Total Dose 1 x 10 RAD Si Latch-Up Free >1 x 1012 RAD (Si)/s Field Programmable Functionally Equivalent to HM-6617 Pin Compatible with Intel 2716


    Original     		HS-6617RH HM-6617 100ns -55oC 125oC MIL-STD-1835 CDIP2-T24 CDFP4-F24 HM-6617 HS1-6617RH-8 HS1-6617RH-Q HS-6617RH HS-80C85RH HS-80C86RH PDF

    49LF002A

    Abstract: 2732 eprom 49lf003a N82802AB EPROM 271024 49lf004a IC 2732 pdf datasheet 6264 SRAM ic 6264 pdf datasheet 49LF008A
    Text: WICE-8MA EPROM/SRAM Emulaor WICE-8MA Capacity Quantity Device Low voltage Device 2K 8 2 2716 4K 8 2 2732 8K 8 2 2764 16K 8 2 27128 32K 8 2 27256 64K 8 2 27512 128K 8 2 27010 27LV010 256K 8 2 27020 27LV020 512K 8 2 27040 27LV040 1024K 8 1 27080 27LV080 64K 16


    Original     		27LV010 27LV020 27LV040 1024K 27LV080 27LV1024 27LV2048 27LV4096 5000m 9X/2000/NT 49LF002A 2732 eprom 49lf003a N82802AB EPROM 271024 49lf004a IC 2732 pdf datasheet 6264 SRAM ic 6264 pdf datasheet 49LF008A PDF

    Untitled

    Abstract: No abstract text available
    Text: /T T SGS-THOMSON ^7# ETC2716 [ÜD g[K](Q |[L[l(g¥ (Q)K!]0(gi 16K BIT (2K x 8) CMOS UV ERASABLE PROM • CMOS POWER CONSUMPTION ■ PERFORMANCE COMPATIBLE TO MARKET STANDARD 8-BIT CMOS MICROP. ■ 2048 x 8 ORGANISATION ■ PIN COMPATIBLE TO 2716 ■ ACCESS TIME DOWN TO 350 ns


    OCR Scan     		ETC2716 DIP-24 DIP-24 24-PIN PDF

    M2716-1F1

    Abstract: M2716F1 SGS M2716 m27161f1 bull thomson M2716-F1 M2716 SGS ET2716Q DIP-24 ET2716
    Text: 7 e!EJ S 3_7_0D.2731.2_7 • S G S -T H O M S O N Ü L iÊ T O R D D Ê i _ ET2716 M 2716 3QZ * 16K 2K x 8 NMOS UV ERASABLE PROM S G S-THOMSON ■ 2048 x 8 ORGANIZATION ■ 525 MW MAX ACTIVE POWER, 132 MW MAX STANDBY POWER ■ LOW POWER DURING PROGRAMMING


    OCR Scan     		ET2716 M2716 M/ET2716-1, 350ns; M/ET2716, 450ns M/ET2716 packag85Â DIP-24 M2716-1F1 M2716F1 SGS M2716 m27161f1 bull thomson M2716-F1 M2716 SGS ET2716Q DIP-24 ET2716 PDF

    SN76477

    Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
    Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p


    OCR Scan     		2114L 6116P3 6116LP3 AY-3-1270 AY-3-1350 AY-3-8910 AY-3-8912 AY-5-1230 CA3080E CA3130E SN76477 TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131 PDF

    2716J

    Abstract: No abstract text available
    Text: V T C INC TTD D | □□□ISSA fa 9 3 8 8 9 2 9 ' V T C INC 99D 0 1 2 8 8 V A 2716 DUAL HIGH-SPEED, FAST-SETTLING OPERATIONAL AMPLIFIER FEATURES • Complete Dual Version of VA706 Fast-Settling Op Amp • Dual Includes Balance for Both Amplifiers • Fast Settling Time: ±0.1% in 200ns


    OCR Scan     		VA706 200ns 25MHz VA2716 theVA706 032-5M 2716J PDF

    la7630

    Abstract: 2SA606 2716 JL LA7830 4vm9 So2716-6 X 27163 A STK78501 LA7650 NV20
    Text: r _ IN O . = ^ m w - = L - x 3178 « « ¿K a a n n » S T K 7 8 5 0 1 - * A * S 'V i t a t e s i ! a k / / - * ¥ 2716 * f i W Ä * | I V l s ] i 'X S •CRT r > a * fi£ .3¡f* — Í* 'f «Ä > T > f 4 - r < O W m & J tL * lÌ E » T * 4 . / / 'S y 7 * , X > Y / f ? J ' - i ' f l h & O / c a M t i t


    OCR Scan     		2512sV> 3178JN^ STK78501 2716-nm la7630 2SA606 2716 JL LA7830 4vm9 So2716-6 X 27163 A STK78501 LA7650 NV20 PDF

    2716A EPROM

    Abstract: 2716A eprom 2716a
    Text: SGS-THOMSON *7#. G NMOS 16K 2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525 mW Max ACTIVE POWER, 132 mW Max STANDBY POWER ■ ACC ESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS AND O U TPU TS TTL COMPATIBLE


    OCR Scan     		M2716-1 350ns M2716 450ns VA30767 M2716 FDIP24W 2716A EPROM 2716A eprom 2716a PDF

    2716 eprom datasheet

    Abstract: SGS 2716 ETC2716Q DIP-24 ETC2716 ETC2716-1 ETC2716Q-1 ETC2716Q-V
    Text: S G S -T H O M S O N „ r o 7 i fi _ ETC2716 16K BIT 2Kx 8 CMOS UV ERASABLE PROM • C M O S P O W ER C O N S U M P T IO N ■ P ER F O R M A N C E C O M P A TIB LE TO M ARKET STA N D A R D 8-BIT C M O S M IC R O P. ■ 2048 x 8 O R G A N IS A T IO N


    OCR Scan     		ETC2716 24IP-24 ETC2716Q-V DIP-24 24-PIN P058-B/8 2716 eprom datasheet SGS 2716 ETC2716Q DIP-24 ETC2716 ETC2716-1 ETC2716Q-1 PDF

    NEC D2716

    Abstract: D2716 PD8048 PD2716 nec d2716 eprom uPD2716-2 NPD2 PD42S18160 iPD2716 ud271
    Text: NEC f*PD2716 v' J1PD2716-2 NEC Electronics U.S.A. Inc. Microcomputer Division 16,384 2K X 8 BIT UV ERASABLE PROM D ESC RIP T IO N The /j P D 2 71 6 is a 16,384 bit (2048 x 8 bit) Ultraviolet Erasable and Electrically Pro­ grammable Read-Only Mem ory (E P R O M ). It operates from a single +5 volt supply,


    OCR Scan     		uPD2716 uPD2716-2 PD2316E LM27S2S //PD42S18160, NEC D2716 D2716 PD8048 PD2716 nec d2716 eprom NPD2 PD42S18160 iPD2716 ud271 PDF

    m2716a

    Abstract: M2732 M2732 25v m2716 M2716M Intel 1030 EPROM M2732 eprom m2716
    Text: intei M27Î6/M2716M 16K 2K x 8 UV ERASABLE PROM M IL IT A R Y • Fast A c c e ss Time; 450 ns maximum Military Temperature Range M2716M: -55°C to 125°C M2716: -55°C to 100°C ■ Static Standby M ode ■ Low Power Dissipation of 165 mW maximum standby power


    OCR Scan     		M2716M: M2716: M2732 M2716/M2716M M2716M M2716 384-bit M2716. m2716a M2732 25v Intel 1030 EPROM M2732 eprom m2716 PDF

    2716 eprom

    Abstract: 2716 eprom datasheet GR281 eprom 2716 2716* eprom GR281, 2K x 8
    Text: GR281 Page 1 of 2 GR281 DESCRIPTION The GR281 is a 2048 word by 8 bits 2K x 8 non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.The pin-out of the GR281 conforms to the JEDEC standards and is fully compatible with normal static RAM.The power down circuit is fully


    Original     		GR281 GR281 \www1\gr281 2716 eprom 2716 eprom datasheet eprom 2716 2716* eprom GR281, 2K x 8 PDF

    2716 eprom

    Abstract: GR281 2716* eprom GR281, 2K x 8
    Text: GR281 Page 1 of 2 GR281 .23rd April 1999 DESCRIPTION The GR281 is a 2048 word by 8 bits 2K x 8 non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.The pin-out of the GR281 conforms to the JEDEC standards and is fully compatible with normal static RAM.The


    Original     		GR281 GR281 com/gr281 2716 eprom 2716* eprom GR281, 2K x 8 PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF

    intel 2716

    Abstract: 2716 EPROM 24 PINS LM6417E eprom 2716 LM6402H LM6402 2716 2k eprom LM6416E LM6416 LM8416
    Text: L M 6 4 P G 9 9 ,9 8 ,9 7 No. 1248 CHIPS FOR EVALUATING N MOS 4-BIT SINGLE-CHIP MICROCOMPUTER LM6400 SERIES SYSTEM SA N Y O 1. General Description The LM64PG99/98/99 are system evaluation chips Intended for application development tools of 4-blt ilngle-chip


    OCR Scan     		LM64PG99 LM6400 LM64PG99/98/99 LM04OO LM64O0 LM6402/05A, LM84PG98 LM6413E LMB4PG97 intel 2716 2716 EPROM 24 PINS LM6417E eprom 2716 LM6402H LM6402 2716 2k eprom LM6416E LM6416 LM8416 PDF

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116 PDF

    2816 eeprom

    Abstract: IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic
    Text: DS 1220AB/AD DALLAS DS1220AB/AD ^ s e m ic o n d u c to r FEATURES Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		1220AB/AD DS1220AB/AD 24-pin DS1220AD) DS1220AB) 2816 eeprom IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic PDF