Si6963DQ
Abstract: No abstract text available
Text: Si6963DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D Si6963DQ 8 7 6 5 G1 D2 S2 S2 G2 G2 Top View D1 D2 P-Channel MOSFET
|
Original
|
PDF
|
Si6963DQ
S-53246--Rev.
26-May-97
|
zl 9352
Abstract: AM DEMODULATOR USING PLL AFC marking TDA8012 tda8010a TDA8010
Text: INTEGRATED CIRCUITS DATA SHEET TDA8012AM Low power PLL FM demodulator for satellite TV receivers Product specification File under Integrated Circuits, IC02 1997 May 26 Philips Semiconductors Product specification Low power PLL FM demodulator for satellite TV receivers
|
Original
|
PDF
|
TDA8012AM
TDA8012AM
TDA8012AM/C1
OT266
zl 9352
AM DEMODULATOR USING PLL
AFC marking
TDA8012
tda8010a
TDA8010
|
TBA 129
Abstract: No abstract text available
Text: ,~V PRODUCT NO SEE TABLE REV DESCRPTON REVD BY CATE A ECR S70163 RLSO BS LOW 26MAY97 DIM B g g 0,83 »0,0 2X1 ,033 *-005 1,27 -0.05 .0501002 1.27 «ftps TYP ,050 <002 (NON-ACCUM n n n mmm mmm U □ □ m m mm @0 m m !l~ T T T J 3,28 <,42 *ojs .129 .174 <oio
|
OCR Scan
|
PDF
|
S70163
26MAY97
t3/J00W
DESCRPT10N
TBA 129
|
Untitled
Abstract: No abstract text available
Text: T e m ic Si6963DQ Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) Id (A) ±3.5 ±2.7 rDS(on) (£2) 0.050 @ VGs = -4.5 V 0.085 @ VGs = -2.5 V 20 Si S2 o p 6 6 P-Channel MOSFET P-Channel MOSFET TSSOP-8 Si6963DQ Top View Di D2
|
OCR Scan
|
PDF
|
Si6963DQ
25Source
S-53246â
26-May-97
|
si6963
Abstract: No abstract text available
Text: Tem ic SÌ6963DQ S e m i c o n d u c t o r s Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary v DS(V) Id *DS<on) ( ß ) 20 (A) 0.050 @ Vqs = -4.5 V ±3.5 0.085 @ Vqs - “2.5 V ± 2.1 iteà ts & Si Si o Q T SSO P-8 " IE Top View Ô Dl Ô D2 P-Channel M OSFET
|
OCR Scan
|
PDF
|
6963DQ
S-53246--
26-May-97
S-53246--Rev.
si6963
|
s63d
Abstract: No abstract text available
Text: SÌ6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET 4 # V d s (V) Rds<on} (&) Id (A) 0.050 @ V q s = -4.5 V ±3.5 0.085 @ V Gs = -2-5 V ±2.7 %$r* 20 s2 Q TS S O P -8 02 "IS Top View Ô d P-Channel M O SFET 2 P-Channel M O SFET A B S O L U T E M A X I M U M R A T I N G S |T A - 25 C U N L E S S O T H E R W
|
OCR Scan
|
PDF
|
6963DQ
S-53246--
26-May-97
s63d
|