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    2663 TRANSISTOR Search Results

    2663 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    2663 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX4790EUS

    Abstract: specifications of ic 1408 aeac MAX4793
    Text: 19-2663; Rev 1; 8/03 200mA/250mA/300mA Current-Limit Switches Features ♦ Guaranteed Current Limit: 200mA, 250mA, 300mA ♦ Thermal-Shutdown Protection ♦ Reverse Current Protection Applications ♦ ♦ ♦ ♦ 0.2Ω On-Resistance 14ms Guaranteed Blanking Time


    Original     		PDF 200mA/250mA/300mA 200mA, 250mA, 300mA MAX4789/MAX4791/MAX4793) OT23/SOT143 MAX4789EUS-T OT143-4 MAX4789EUK-T MAX4790EUS specifications of ic 1408 aeac MAX4793

    MAX4793

    Abstract: No abstract text available
    Text: 19-2663; Rev 3; 10/08 200mA/250mA/300mA Current-Limit Switches The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate


    Original     		PDF 200mA/250mA/300mA MAX4789â MAX4794 200mA, 250mA, 300mA MAX4789, MAX4791, MAX4793 /250mA/300mA

    MAX4793

    Abstract: MAX4790EUS specifications of ic 1408 MAX4785 MAX4788 MAX4789 MAX4789EUS-T MAX4790 MAX4791 MAX4792
    Text: 19-2663; Rev 0; 10/02 200mA/250mA/300mA Current-Limit Switches Features The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate


    Original     		PDF 200mA/250mA/300mA MAX4789 MAX4794 200mA, 250mA, 300mA MAX4789, MAX4791, MAX4793 MO229 MAX4790EUS specifications of ic 1408 MAX4785 MAX4788 MAX4789EUS-T MAX4790 MAX4791 MAX4792

    MAX47915

    Abstract: MAX4793 aeac IC ax 2008 IC ax 2008 circuit diagram MAX4789EUS-T MAX4785 MAX4788 MAX4789 MAX4790
    Text: 19-2663; Rev 3; 10/08 200mA/250mA/300mA Current-Limit Switches The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate


    Original     		PDF 200mA/250mA/300mA MAX4789 MAX4794 200mA, 250mA, 300mA MAX4789, MAX4791, MAX4793 MAX47915 aeac IC ax 2008 IC ax 2008 circuit diagram MAX4789EUS-T MAX4785 MAX4788 MAX4790

    MAX4793

    Abstract: AX sot23-5 MAX4790EUS specifications of ic 1408 MAX4785 MAX4788 MAX4789 MAX4789EUS-T MAX4790 MAX4791
    Text: 19-2663; Rev 2; 2/05 200mA/250mA/300mA Current-Limit Switches Features The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate


    Original     		PDF 200mA/250mA/300mA MAX4789 MAX4794 200mA, 250mA, 300mA MAX4789, MAX4791, MAX4793 T1433-2 AX sot23-5 MAX4790EUS specifications of ic 1408 MAX4785 MAX4788 MAX4789EUS-T MAX4790 MAX4791

    25Starting

    Abstract: khb9d0n90f1 khb9d0n90f 75nC 2663 transistor KHB9D0N90P1
    Text: SEMICONDUCTOR KHB9D0N90P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N90P1/F1 KHB9D0N90P1 dI/dt200A/, 25Starting khb9d0n90f1 khb9d0n90f 75nC 2663 transistor KHB9D0N90P1

    9d0n90n

    Abstract: KHB 9d0n90n khb9d0n90n khb9d0n90na 2663 transistor 9d0n90 54NC khb9d0n90 transistor marking 020
    Text: SEMICONDUCTOR KHB9D0N90NA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N90NA dI/dt200A/, 9d0n90n KHB 9d0n90n khb9d0n90n khb9d0n90na 2663 transistor 9d0n90 54NC khb9d0n90 transistor marking 020

    KHB9D0N90N1

    Abstract: khb9d0n90n khb9d0n90 2663 transistor
    Text: SEMICONDUCTOR KHB9D0N90N1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N90N1 KHB9D0N90N1 khb9d0n90n khb9d0n90 2663 transistor

    KHB 9d0n90n

    Abstract: 9d0n90n KHB9D0N90N KHB9D0N90NA 54nc
    Text: SEMICONDUCTOR KHB9D0N90NA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N90NA above25 0N90NA KHB 9d0n90n 9d0n90n KHB9D0N90N KHB9D0N90NA 54nc

    khb9d0n90n

    Abstract: khb9d0n90
    Text: SEMICONDUCTOR KHB9D0N90N1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N90N1 khb9d0n90n khb9d0n90

    RF5189

    Abstract: qfn 32 land pattern IPC-SM-782 qfn 3X3 20 pins land pattern 16 pins qfn 3x3 footprint
    Text: RF5189 3V, 2.45GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery-Powered Equipment • Wireless LAN Systems • Spread-Spectrum and MMDS Systems


    Original     		PDF RF5189 45GHz IEEE802 RF5189 203mm 330mm 025mm qfn 32 land pattern IPC-SM-782 qfn 3X3 20 pins land pattern 16 pins qfn 3x3 footprint

    smd transistor 2f

    Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
    Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.


    OCR Scan     		PDF Tap15 FTO-220 S10VB S15VB S15VBA S25VB S50VB S10WB S15WB S20WB smd transistor 2f 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z

    IC AL 6001

    Abstract: rjz ce 6002 transistor PTC6003
    Text: 6115950 MICROSEMI 02E CORP/POWER □5 00448 D D e | ^ 1 1 5 ^ 5 0 o p p c m ita 1 f PTC PTC PTC PTC TECH N O LO GY Power Technology Components 6000 6001 6002 6003 FAST-SWITCHING HIGH POWER DARLINGTON TRANSISTORS 15 AMPERES 500 VOLTS Ö -o * 0 384| JÔ50 -{2663! MAX“


    OCR Scan     		PDF 6001I 6002PTC IC AL 6001 rjz ce 6002 transistor PTC6003

    SMD T26

    Abstract: S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000
    Text: Standard Ordering Quantity and Packing Form Explanation of Packing Form 1. lype No. • S t a n d a r d label spec for ta p e & reel products. Example 1 D1N □ Example 2 2SK 2663 4_ -R e v e rse voltage divided by 10. -JE IT A No. -JE1TA Classification. 2SA, 2SB, 2SC, 2SD: T ran sisto r


    OCR Scan     		PDF AX057 AX078 AX057 SMD T26 S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000

    Untitled

    Abstract: No abstract text available
    Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10


    OCR Scan     		PDF 2SK1861 F05B23VR 2SK1195 STO-220 STO-220

    Untitled

    Abstract: No abstract text available
    Text: Surface-Mount Devices Power Transistors w E-pack Bipolar transistors A bsolute M axim um Ratings Type No. 2SA 1795 1796 1876 1877 VcBO VcEO V ebo Ic [V] [V] [V] [A] -6 0 -4 0 -5 -7 -8 0 -8 0 60 40 2SC 4668 -1 -5 -1 .5 100 80 4979 Tj sus (min) [W] [°C] P C ]


    OCR Scan     		PDF OT-89 2SK1861 2SK1195

    2SC460

    Abstract: No abstract text available
    Text: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E IA J Absolute Maximum Ratings Electrical C haracteristics V cbo VCEO V ebo Ic Ib Pt T stg [V] [V] [V] [A ] [A ] [W] [•c] [•c] Vceo s u s (min) [V] -5 — 7 -1.5 -55 -40 -3 -1 -5 7 -1.5


    OCR Scan     		PDF 2SA1795 2SC460S Enhance861 F05B23VR 2SK2489 STO-220 2SC460

    e-pack

    Abstract: 2SK1861 2SK1195 F05B23VR
    Text: Bipolar transistors Absolute Maximum Ratings Type No. lliliM S lii» I ä ä S ä 1876 È èÊ ë ÊÊÈîM iÎ ilïlilÈ V cbo VCEO V ebo Ic Ib Pt Tstg Ti sus (min) [V ] [V ] [V ] [A ] [A ] [W ] C-c] [°G ] [V ] -6 0 iÎ ï — 5 -4 0 L -8 0 60 7 40 7 100


    OCR Scan     		PDF STO-220 D005172 e-pack 2SK1861 2SK1195 F05B23VR

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6403 is designed for 1.8 GHz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and


    OCR Scan     		PDF MRF6403 C9toC12

    LB1287

    Abstract: 2663 transistor booc power transistors LB1288
    Text: 266E Ordering number : EN , Monolithic Digital 1C LB1287.1288 N0.266E Darlington Transistor Array These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in equip­


    OCR Scan     		PDF LB1287J288 14-pin LB1287 2663 transistor booc power transistors LB1288

    2663 transistor

    Abstract: mpsa70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon MPSA70 COLLECTOR 3 1 EMITTER CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ T/\ = 25°C


    OCR Scan     		PDF MPSA70 O-226AA) AN-569. 2663 transistor mpsa70

    17611

    Abstract: 2sc2652 138D 2SA1020 2SA1133
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 930MHz 58MHz 17611 2sc2652 138D 2SA1020 2SA1133

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device


    OCR Scan     		PDF AN215A, MRF5035. AN721, MRF5035

    Untitled

    Abstract: No abstract text available
    Text: Temic U2403B S e m i c o n d u c t o r s Charge Timer Description The U2403B is a monolithic, integrated-bipolar circuit which can be used in applications for time-controlled, constant-current charge. Selection of charge current versus timing is carried out by using the external circuit


    OCR Scan     		PDF U2403B U2403B 20-Mar-96