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    26 M1A Price and Stock

    Swissbit SFPC160GM1AG2TO-C-8C-51P-STD

    Solid State Drives - SSD 160 GB - 3.3 V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SFPC160GM1AG2TO-C-8C-51P-STD 20
    • 1 $232.4
    • 10 $206.18
    • 100 $191.77
    • 1000 $191.77
    • 10000 $191.77
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    Swissbit SFPC480GM1AG2TO-C-8C-526-STD

    Solid State Drives - SSD 480 GB - 3.3 V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SFPC480GM1AG2TO-C-8C-526-STD 18
    • 1 $199.34
    • 10 $173.68
    • 100 $173.21
    • 1000 $173.21
    • 10000 $173.21
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    Swissbit SFPC320GM1AG4TO-I-8C-51P-STD

    Solid State Drives - SSD M.2 PCIe SSD 320GB - 3.3V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SFPC320GM1AG4TO-I-8C-51P-STD 13
    • 1 $563.86
    • 10 $563.86
    • 100 $563.86
    • 1000 $563.86
    • 10000 $563.86
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    Swissbit SFPC040GM1AG2TO-I-6B-51P-STD

    Solid State Drives - SSD M.2 PCIe SSD 40GB - 3.3V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SFPC040GM1AG2TO-I-6B-51P-STD 9
    • 1 $114.99
    • 10 $102.04
    • 100 $90.97
    • 1000 $90.97
    • 10000 $90.97
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    Swissbit SFSA010GM1AO1TO-C-5S-12P-STD

    Solid State Drives - SSD Industrial M.2 SATA SSD, X-86m2 (2242), 10 GB, 3D PSLC Flash, 0C to +70C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SFSA010GM1AO1TO-C-5S-12P-STD 3
    • 1 $65.37
    • 10 $51.59
    • 100 $45.62
    • 1000 $45.62
    • 10000 $45.62
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    Find more 26 M1A price and stock on Findchips.com

    26 M1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10Mohm LDR

    Abstract: B156 CH-2074 EM6620
    Text: EM6620 Table of Contents FEATURES _2 DESCRIPTION _2 TYPICAL APPLICATIONS _2 EM6620 AT A GLANCE _3 8.2 IRQ FROM MSC _ 26 8.3 MSC-MODES _ 27


    Original     		PDF EM6620 EM6620 B/156 CH-2074 10Mohm LDR B156

    Untitled

    Abstract: No abstract text available
    Text: TH09/2479 TH97/2478 www.eicsemi.com MZ5913A - MZ5956A IATF 0113686 SGS TH07/1033 SILICON ZENER DIODES M1A VZ : 3.3 - 200 Volts PD : 1.5 Watts FEATURES : * * * * * 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation


    Original     		PDF TH09/2479 TH97/2478 MZ5913A MZ5956A TH07/1033 UL94V-0 MIL-STD-202, MZ5949A MZ5950A MZ5951A

    20c15

    Abstract: FDS8936A LTC1628 140T3
    Text: SPECIFICATION NOTICE DEMO MANUAL DC236 May 1999 Figure 2 of Demo Manual DC236 has been changed. Power MOSFETs M1a and M2b were incorrectly placed in the drawing and the corrected version of the Figure is shown below. , LTC and LT are registered trademarks of Linear Technology Corporation.


    Original     		PDF DC236 DC236 180pF 1000pF 1000pF 140T3 20c15 FDS8936A LTC1628 140T3

    10EDA60

    Abstract: No abstract text available
    Text: Certificate TH97/10561QM 10EDA60 Certificate TW00/17276EM SILICON RECTIFIER DIODE M1A PRV : 600 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) Glass passivated junction chip High Surge Capability Low Forward Voltage drop


    Original     		PDF TH97/10561QM 10EDA60 TW00/17276EM UL94V-O MIL-STD-202, 10EDA60

    RECTIFIER DIODES SGS

    Abstract: No abstract text available
    Text: TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 LMN1A - LMN1M GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere M1A FEATURES : * * * * * * Glass passivated junction chip High current capability High reliability Low reverse current


    Original     		PDF TH97/10561QM TW00/17276EM TH07/1033 UL94V-O MIL-STD-202, RECTIFIER DIODES SGS

    Untitled

    Abstract: No abstract text available
    Text: MZ85C3V0-MZ85C200 Silicon Zener Diodes VZ : 3.0 - 200 Volts PD : 1.3 Watts Features — — — — — M1A Complete Voltage Range 3.0 to 200 Volts High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free 1.00 25.4 MIN. 0.085(2.16)


    Original     		PDF MZ85C3V0-MZ85C200 UL94V-O MIL-STD-202, MZ85C27 MZ85C30 MZ85C33 MZ85C36 MZ85C39 MZ85C43 MZ85C47

    MZ85C200

    Abstract: MZ85C3V0 MZ85C3V3 MZ85C3V6 MZ85C3V9 MZ85C4V3
    Text: Certificate : TH97/10561QM MZ85C3V0~MZ85C200 SILICON ZENER DIODES M1A VZ : 3.0 - 200 Volts PD : 1.3 Watts FEATURES : * * * * * Certificate : TW00/17276EM 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) Complete Voltage Range 3.0 to 200 Volts High peak reverse power dissipation


    Original     		PDF TH97/10561QM MZ85C3V0 MZ85C200 TW00/17276EM UL94V-O MIL-STD-202, MZ85C200 MZ85C3V3 MZ85C3V6 MZ85C3V9 MZ85C4V3

    1n448* diode

    Abstract: 1N4465 1N4475 1N4479 1N4474 1N4469 1N4460 1N4496 1N6486 1N6487
    Text: Certificate TH97/10561QM 1N4460 - 1N4496 and 1N6485 - 1N6491 Certificate TW00/17276EM SILICON ZENER DIODES M1A VZ : 3.3 - 200 Volts PD : 1.5 Watts FEATURES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation


    Original     		PDF TH97/10561QM 1N4460 1N4496 1N6485 1N6491 TW00/17276EM UL94V-O MIL-STD-202, 1N4491 1N4492 1n448* diode 1N4465 1N4475 1N4479 1N4474 1N4469 1N6486 1N6487

    Untitled

    Abstract: No abstract text available
    Text: MZ55C3V0-MZ55C200 Silicon Zener Diodes VZ : 3.0 - 200 Volts PD : 500 mW M1A Features — — — — — — Complete 3.0 to 200 Volts High surge current capability High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free 0.085 2.16


    Original     		PDF MZ55C3V0-MZ55C200 UL94V-O MIL-STD-202, MZ55C75 MZ55C82 MZ55C91 MZ55C100 MZ55C110 MZ55C120 MZ55C130

    MZ55C27

    Abstract: MZ55C200 MZ55C3V0 MZ55C3V3 MZ55C3V6 MZ55C3V9 MZ55C4V3
    Text: Certificate TH97/10561QM MZ55C3V0 ~ MZ55C200 Certificate TW00/17276EM SILICON ZENER DIODES M1A VZ : 3.0 - 200 Volts PD : 500 mW 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) FEATURES : * Complete 3.0 to 200 Volts * High surge current capability * High peak reverse power dissipation


    Original     		PDF TH97/10561QM MZ55C3V0 MZ55C200 TW00/17276EM UL94V-O MIL-STD-202, MZ55C27 MZ55C200 MZ55C3V0 MZ55C3V3 MZ55C3V6 MZ55C3V9 MZ55C4V3

    MZ55B200

    Abstract: MZ55B3V0 MZ55B3V3 MZ55B3V6 MZ55B3V9 MZ55B4V3
    Text: Certificate TH97/10561QM MZ55B3V0 ~ MZ55B200 Certificate TW00/17276EM SILICON ZENER DIODES M1A VZ : 3.0 - 200 Volts PD : 500 mW 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) FEATURES : * Complete 3.0 to 200 Volts * High surge current capability * High peak reverse power dissipation


    Original     		PDF TH97/10561QM MZ55B3V0 MZ55B200 TW00/17276EM UL94V-O MIL-STD-202, position12 MZ55B200 MZ55B3V0 MZ55B3V3 MZ55B3V6 MZ55B3V9 MZ55B4V3

    bosch servo module SM 10/20

    Abstract: FA58 hd64f2635 21c16 LDC7 bc 547 557 LSI Message Passing Interface MPI specification Nippon capacitors 64F2630 HD6432634
    Text: REJ09B0103-0700 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2639, H8S/2638, H8S/2636,


    Original     		PDF REJ09B0103-0700 H8S/2639, H8S/2638, H8S/2636, H8S/2630, H8S/2635 16-Bit Family/H8S/2600 bosch servo module SM 10/20 FA58 hd64f2635 21c16 LDC7 bc 547 557 LSI Message Passing Interface MPI specification Nippon capacitors 64F2630 HD6432634

    PMM Bd-5701

    Abstract: PowerPC Power ISA Architecture
    Text: PowerPC 405EP Embedded Processor User’s Manual Preliminary SA14-2696-00  Preliminary First Preliminary Edition October 2002 This edition of the IBM PPC405EP Evaluation Board Kit User’s Manual applies to the IBM PPC405EP 32-bit embedded controller, until otherwise indicated in new versions or application notes.


    Original     		PDF 405EP SA14-2696-00 PPC405EP 32-bit PMM Bd-5701 PowerPC Power ISA Architecture

    Untitled

    Abstract: No abstract text available
    Text: AUTOMOTIVE GRADE AUIRFL014N HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant


    Original     		PDF AUIRFL014N

    A3P3000l

    Abstract: IO270 A3P3000
    Text: v1.0 ProASIC3L Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • Dramatic Reduction in Dynamic and Static Power Savings • 1.2 V / 1.5 V Core and I/O Voltage Support for Low Power • Low Power Consumption in Flash*Freeze Mode Allows for


    Original     		PDF 130-nm, A3P3000l IO270 A3P3000

    ARMv6

    Abstract: cortex a15 core Cortex-m1 Cortex R4 TRANSISTOR ww1 AES-128 FG256 FG484 T8 851
    Text: v1.2 IGLOOe Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation Flash*Freeze Technology Enables Ultra-Low Power


    Original     		PDF 130-nm, ARMv6 cortex a15 core Cortex-m1 Cortex R4 TRANSISTOR ww1 AES-128 FG256 FG484 T8 851

    Untitled

    Abstract: No abstract text available
    Text: v1.3 IGLOOe Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation Flash*Freeze Technology Enables Ultra-Low Power


    Original     		PDF 130-nm,

    Untitled

    Abstract: No abstract text available
    Text: D-Subminiature connectors Solder pin straight high density Socket connector Plug connector Kat 1 i MOA Kat 1 i M1A A -0 .7 6 B - 0,25 C A -0 .7 6 B + 0,25 C D - 0,30 31,19 16,46 25,00 "o'il 15 31,19 16,79 25,00 +Do:;3 6,12 39,52 24,79 26 39,52 25,12 53,42


    OCR Scan     		PDF 15-polig/way 25-polig/way 37-polig/way 50-polig/way 26-polig/way 44-polig/way 62-polig/way 78-poliq/way

    TC-131M-3A-94

    Abstract: TC221
    Text: W O U N D TOROIDS TC SERIES TC Series are inductors wound on Amidon #26 Iron Powder material toroids. Arnidon provides low volume hand windings to high volume automatic machine windings. Please call for the most competitive pricing, and delivery schedules.


    OCR Scan     		PDF TC-101 TC-131M-3A-94 TC221

    29RD120

    Abstract: 29RD100 SF2500EX21 29RD80 39RC40 11RC40 11rc80 SF1500GX21 21RC10 21RC60
    Text: - 26 - Ä s s tt S Vrrm V drm Vr s m V SF1500EX24 SF15 0 0G 27 SF1500GX21 SF1500J27 SF1500L27 j s s * 2 SRIFnO Q97 SF15 0 0U2 7 j8 £ SF2500EX21 SF3000GX21 URSF05G49-1P * 2 (V) I tcavd Te CC) (A) 275 0 500 4 40 0 720 960 1 11; n 250 0 400 4 00 0 600 800


    OCR Scan     		PDF 2-10ms SF1500EX24 SF1500G27 SF1500GX21 SF1500J27 H-101 29RD120 29RD100 SF2500EX21 29RD80 39RC40 11RC40 11rc80 SF1500GX21 21RC10 21RC60

    29RD100

    Abstract: 29RD120 29RD80 29RD60 21RC60 11RC40 4a2d SF2500Ex21 11RC60 39RC20
    Text: - 26 - Ä s s tt S Vr r m V d rm Vr s m V SF1 5 0 0 EX 2 4 js s SF1500G27 SF1500GX21 * 2 S F 1 5 0 0 J2 7 SF1 5 0 0 L2 7 SRIFnO Q 9 7 SF1500U 27 j8 £ SF2 5 0 0 EX 2 1 SF3000GX21 U R SF0 5 G 4 9 -1 P * 2 (V ) I tcavd Te CC) (A ) 2750 500 4400 720 960 1 11; n


    OCR Scan     		PDF 2-10ms SF1500EX24 SF1500G27 SF1500GX21 SF1500J27 H-101 29RD100 29RD120 29RD80 29RD60 21RC60 11RC40 4a2d SF2500Ex21 11RC60 39RC20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY HY514400 HYUNDAI SEMICONDUCTOR 1 MX 4-Bit CMOS DRAM M1A1200A-MAY91 DESCRIPTION FEATURES The H Y 514400 is the new generation dyna­ mic RAM organized 1,048,576 words by 4 bits. The HY514400 utilizes HYUNDAI’S CMOS process technology as well as advanced circuit


    OCR Scan     		PDF HY514400 M1A1200A-MAY91 HY514400 HY514400. 512KX8

    T23N

    Abstract: au1017 4100 dram HYS14400 IPC 4104
    Text: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability


    OCR Scan     		PDF 4b750Ã DG0Q333 HY514400 HYS14400 M1A1200A-MAY91 -23-n FEA11 T23N au1017 4100 dram IPC 4104

    W41J

    Abstract: IPC 4104
    Text: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability


    OCR Scan     		PDF DG00333 M1A1200A-MAY91 HY514400 HY514400. 512KX W41J IPC 4104