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    Altech Corporation KEM325UL-Y-R

    SWITCH 600V 25A
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    DigiKey KEM325UL-Y-R Box 438 1
    • 1 $106.98
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    Sanyo-Denki Co Ltd 109S025UL

    FAN 120X38MM 230VAC
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    DigiKey 109S025UL Box 119 1
    • 1 $46.17
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    Mouser Electronics 109S025UL
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    Sager 109S025UL 1
    • 1 $50.01
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    MH Connectors MHDCMR25-ULP

    25 WAY D-SUB HOOD DIE CAST SIDE
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    DigiKey MHDCMR25-ULP Box 97 1
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    Newark MHDCMR25-ULP Bulk 240 1
    • 1 $19.19
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    TME MHDCMR25-ULP 48 1
    • 1 $11.66
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    Amphenol Communications Solutions 57102-F08-25ULF

    CONN HEADER VERT 50POS 2MM
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    DigiKey 57102-F08-25ULF Tube 40 1
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    Newark 57102-F08-25ULF Bulk 86 220
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    TME 57102-F08-25ULF 1
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    Master Electronics 57102-F08-25ULF
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    Sanyo-Denki Co Ltd 109S425UL-30

    FAN 120X38MM 230VAC ALARM
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    DigiKey 109S425UL-30 Box 20 1
    • 1 $86.4
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    • 100 $81.1125
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    Mouser Electronics 109S425UL-30 20
    • 1 $91.68
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    Sager 109S425UL-30 1
    • 1 $112.19
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    25UL Datasheets Context Search

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    TIM6472-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		TIM6472-25UL TIM6472-25UL PDF

    TIM6472-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		TIM6472-25UL TIM6472-25UL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM3742-25UL 95GHz PDF

    TIM7785-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		TIM7785-25UL TIM7785-25UL PDF

    TIM5964-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		TIM5964-25UL 15GHz TIM5964-25UL PDF

    TIM6472-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM6472-25UL TIM6472-25UL PDF

    TIM3742-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		TIM3742-25UL 95GHz TIM3742-25UL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz n HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		TIM7785-25UL PDF

    TIM6472-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM6472-25UL TIM6472-25UL PDF

    TIM7785-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM7785-25UL TIM7785-25UL PDF

    TIM5964-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM5964-25UL 15GHz TIM5964-25UL PDF

    TIM7179-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM7179-25UL TIM7179-25UL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		TIM5964-25UL -47ds 15GHz PDF

    25ul

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM3742-25UL 95GHz 25ul PDF

    TIM4450-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		TIM4450-25UL TIM4450-25UL PDF

    TIM4450-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM4450-25UL TIM4450-25UL PDF

    TIM7785-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM7785-25UL TIM7785-25UL PDF

    TIM5964-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM5964-25UL 15GHz TIM5964-25UL PDF

    TIM7179-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		TIM7179-25UL TIM7179-25UL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM4450-25UL PDF

    TIM3742-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM3742-25UL 95GHz TIM3742-25UL PDF

    TIM7179-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM7179-25UL TIM7179-25UL PDF

    TIM4450-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		TIM4450-25UL TIM4450-25UL PDF

    TIM3742-25UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		TIM3742-25UL 95GHz TIM3742-25UL PDF