BTS089
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors NPN Silicon MMBT5088LT1 MMBT5089LT1* C O L LE C T O R 3 'Motorola Preferred Device % MAXIMUM RATINGS Rating Sym bol 5088LT1 5089LT1 Unit Collector-Em itter Voltage VCEO 30 25 Vdc C o lle c to r-B a s e Voltage
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MMBT5088LT1
MMBT5089LT1*
5088LT1
5089LT1
25rtC
BT5089LT1
BTS089
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MTP50N06E
Abstract: TP50N06E diode 9.1 b3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP50N06E TMOS E-FET™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 50 AMPERES RDS on = 0.025 OHM 60 VOLTS This advanced TMOS E-FET is designed to withstand high
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15VVGS
MTP50N06E
3b72S4
MTP50N06E
TP50N06E
diode 9.1 b3
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J FET AM LNA
Abstract: No abstract text available
Text: A fr i Coming Attractions m an A M P com pany 250 mW Power Amplifier with T/R and Diversity Switches 2.4 - 2.5 GHz AM55-0003 Features SSOP-28 • H ighly In te g ra te d P o w e r A m plifier W ith T /R a n d D iversity S w itches _ +.0025 .0275 . 0025 • O p e ra te s O v e r 2.7 V to 6 V S u p p ly Voltage
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AM55-0003
SSOP-28
AM55-0003
46F-4658,
J FET AM LNA
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