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    BTS089

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors NPN Silicon MMBT5088LT1 MMBT5089LT1* C O L LE C T O R 3 'Motorola Preferred Device % MAXIMUM RATINGS Rating Sym bol 5088LT1 5089LT1 Unit Collector-Em itter Voltage VCEO 30 25 Vdc C o lle c to r-B a s e Voltage


    OCR Scan     		MMBT5088LT1 MMBT5089LT1* 5088LT1 5089LT1 25rtC BT5089LT1 BTS089 PDF

    MTP50N06E

    Abstract: TP50N06E diode 9.1 b3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP50N06E TMOS E-FET™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 50 AMPERES RDS on = 0.025 OHM 60 VOLTS This advanced TMOS E-FET is designed to withstand high


    OCR Scan     		15VVGS MTP50N06E 3b72S4 MTP50N06E TP50N06E diode 9.1 b3 PDF

    J FET AM LNA

    Abstract: No abstract text available
    Text: A fr i Coming Attractions m an A M P com pany 250 mW Power Amplifier with T/R and Diversity Switches 2.4 - 2.5 GHz AM55-0003 Features SSOP-28 • H ighly In te g ra te d P o w e r A m plifier W ith T /R a n d D iversity S w itches _ +.0025 .0275 . 0025 • O p e ra te s O v e r 2.7 V to 6 V S u p p ly Voltage


    OCR Scan     		AM55-0003 SSOP-28 AM55-0003 46F-4658, J FET AM LNA PDF