30g 124
Abstract: 200G
Text: REED RELAYSsenrEs4o APPLICATION ADVANTAGES. SER'ES 40 RELAYSOFFERMANYUNIQUEDESIGN TRACEABLE USINGMATERIALS THEIRUNIQUEPACKAGEDESIGNIS MANUFACTURED TO UL 94VO RATINGSCOUPLEDWITHITS ECONOMICALPRICEMAKETHISRELAYFAR RELAYS. TOCOMPETITIVE SUPERIOR AND ANDCONTROLSMEETMIL.Q.9858.A,
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MIL-1452084.
575M1N1-
s50MMl
42sft
950lvlA
lffi-71
1385I
30g 124
200G
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DL15
Abstract: OABI 78dl
Text: 8DLOOP, T A 7 8 D L 0 0 Si -y — gKn-,~f3 TA78DLQÜP -G TA 78D L05 P DDOUT ”0 ” coütü . (SLtÜfl 25OmA wmM wmwm | 7 'D -, í> 0 íspbi^ t , esR 100/íF i n u r 1. At) 2. ñ \tl • 3. «* •«SílW* (I 1OmA, Tj —25C] TA78DL i 5P TA78DL15S aÜ ^
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ta78dl0
100/iF
35VSV,
TA78DLOOP
TA78DLOOS
DL15
OABI
78dl
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CVSD modulator
Abstract: Continuously Variable Slope Delta Modulator package marking WTP
Text: REVISIONS LTR DATE YB-MO-OA DESCRIPTION Table I, Ir e f > correct minimum limit. Table II, remove subgroups 4, 5, and 6 from groups C and D end-point electrical parameters. Update format. Editorial charges throughout. APPROVED 1989 NOV 15 0J.&- REV SHEET
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5962-8764301EX
3517/BEAJC
5962-87643012X
3517/B2AJC
CVSD modulator
Continuously Variable Slope Delta Modulator
package marking WTP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs MMIC bE4,ìfl2Il DDlflD^l 74^ MGF7122 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION MGF7122 is a monolithic microwave integrated circuit for use in 1,9GHz band power amplifiers. FEATURES •H igh output power Po=21 dBm, 7C/4DQPSK •Sm all size
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MGF7122
MGF7122
600kHz)
900kHz)
21dBm
-13dBm
600kHz,
21dBm
900kHz,
25OmA
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2N6717
Abstract: 2N6730 2N6728 2N6718 2N6716 2N6729 World transistors and ic
Text: Data Sheet Central 2N671 6 2 N6728 Sem iconductor Corp. 2 N6 7 18 2N6730 2N6717 2N67.29. NPN PNP COMPLEMENTARY S IL IC O N 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 POWER TRANSISTORS M anufacturers of W orld Class Discrete Semiconductors
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2N6716
2N6717
2N6718
2N6728
2N6729
2N6730
T0-237
2N6716,
World transistors and ic
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2N3741
Abstract: 2N3740 2N3740A 2N3741A
Text: 2N3740, A 2N3741, A PNP S I L I C O N & S I 1 Ì I C S I 1 0 I J S S 0 ? WiCll^pS*» POWER TRANSISTORS Central Sem iconductor Corp. 145 Adams Avenue Hauppauge, New York 11 788 J EDEC TO-66 CASE DE S CR I P T I ON The CENTRAL SEMICONDUCTOR 2N3740 s e r i e s t y p e s a r e s i l i c o n PNP power t r a n s i s t o r s
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2N3740,
2N3741,
T0-66
2N3740
125mA
250mA
100mA
250mA
500mA
100mA,
2N3741
2N3740A
2N3741A
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km44c16104ak
Abstract: No abstract text available
Text: KMM364E1600AK/AS KMM364E1680AK/AS DRAM MODULE KMM364E1600AK/AS & KMM364E1680AK/AS Fast Page with EDO Mode 16Mx64 DRAM DIMM based on 16Mx4, 4K & 8K Refresh, 5V G E N E R A L DESCRIPTIO N FEATURES The Samsung KMM364E160 8 0A is a 4M bit x 64 Dynamic RAM high density memory module. The
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KMM364E1600AK/AS
KMM364E1680AK/AS
KMM364E1600AK/AS
KMM364E1680AK/AS
16Mx64
16Mx4,
KMM364E160
KMM364E1600AK
KMM364E1600AS
km44c16104ak
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dual P-CHANNEL 30V DS MOSFET
Abstract: NDS8958 Dual N & P-Channel MOSFET
Text: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDS8958
035fi
b5D113D
dual P-CHANNEL 30V DS MOSFET
NDS8958
Dual N & P-Channel MOSFET
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GL7805
Abstract: GL7809 GL 7805 GL7815 GL7812 GL7808 gl7806 GL7818 GL7824 7805 12v to 5v 3a
Text: GL78XX Series POSITIVE VOLTAGE REGULATOR Description Pin Configuration The GL78XX Series are monolithic integrated circuits designed as fixed -vo ltag e regulator. T h ese regulators employ internal current limiting, thermal shutdown, and safe-area compensation.
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GL78XX
GL7805
GL7809
GL 7805
GL7815
GL7812
GL7808
gl7806
GL7818
GL7824
7805 12v to 5v 3a
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2N4238
Abstract: 2N4234 2N4235 2N4237
Text: 2N 4234 2N4235 2N4237 2N4238 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES •I .+'\ 'í ' s'.' ! - i. V •/ *94 : - I • • ' ¿ /«• . •: i. > * r I« r . •• V •: I •- ' V - A " k m .-*; •>.* > . ► ,i • g ¡ i S ;*i *•.
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2N4235
2N4237
2N4238
2N4234Â
2N4235
2N4237,
2F4238
2N4234
2N4237
2N4234
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605-LF
Abstract: SDR600 SDR601 SDR602 SDR603 SDR604 SDR605 SDR606 SDR607
Text: nr SOLID STATE DEVICES INC 12E D |fl3L,t,011 OODlfl4fl 4 I _ T - Q 3 - / 7 SDR600 THRU SDR607 15 AMPS ULTRA FAST RECOVERY RECTIFIERS 5 0 -7 0 0 VOLTS CASE STYLE G D O -4 FEATURES • • • • • • • • MAXIMUM RATINGS ULTRA FAST RECOVERY 45 NSEC MAX
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T-03-/7
SDR600
SDR607
O-59/111
SDR602
SDR603
SDR604
SDR605
SDR606
605-LF
SDR601
SDR607
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IC 74142
Abstract: KMM364E224BJ
Text: Preliminary KMM364E224BJ DRAM MODULE KMM364E224BJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 16, 1K Refresh, 5V G EN ERA L DESCRIPTION FEATURES The Samsung KMM364E224BJ is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364E224BJ consists of eight CMOS
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KMM364E224BJ
KMM364E224BJ
2Mx64
1Mx16bit
42-pin
400mil
48pin
168-pin
IC 74142
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GL7809
Abstract: GL7812 GL7815 GL7805 GL7808 GL7824 GL7806 GL7818 GL7812 PIN DIAGRAM GL78XX
Text: GL78XX Series POSITIVE VOLTAGE REGULATOR Description Pin Configuration The GL78XX Series are monolithic integrated circuits designed as fixed-voltage regulator. These regulators employ internal current limiting, thermal shutdown, and safe-area compensation.
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GL78XX
GL7809
GL7812
GL7815
GL7805
GL7808
GL7824
GL7806
GL7818
GL7812 PIN DIAGRAM
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