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    2N671 Search Results

    2N671 Datasheets (194)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N671 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N671 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N671 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N671 Unknown Vintage Transistor Datasheets Scan PDF
    2N671 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N671 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N671 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6710 Continental Device India PNP SILICON PLANAR EPITAXIAL TRANSISTOR Original PDF
    2N6710 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    2N6710 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6710 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6710 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6710 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6710 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6710 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6710 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6710 National Semiconductor Medium Power Transistors Scan PDF
    2N6710 National Semiconductor PNP Transistors Scan PDF
    2N6710 National Semiconductor Medium Power Transistors Scan PDF
    2N6710 National Semiconductor Medium Power Transistors Scan PDF
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    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 2N6715 2N6716 TO-237 Plastic Package NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.


    Original     		PDF 2N6714 2N6715 2N6716 O-237 C-120

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N6719 TO-237 Plastic Package Designed for Applilcation as a Video Output to Drive Color CRT ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF QSC/L-000019 2N6719 O-237 C-120 2N6719 Rev110302D

    2N6718

    Abstract: 2n6717 2N6716 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718
    Text: 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter


    Original     		PDF 2N6716 2N6717 2N6718 2N6716 2N6717 250mA, 2N6718 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718

    IT 237

    Abstract: 2N6710
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6710 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage


    Original     		PDF ISO/TS16949 2N6710 O-237 C-120 IT 237 2N6710

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A


    Original     		PDF 2N6718 2N6718 850mW 2N6718L-x-AB3-R 2N6718G-x-AB3-R 2N6718L-x-T6C-K 2N6718G-x-T6C-K 2N6718L-x-T92-B 2N6718G-x-T92-B 2N6718L-x-T92-K

    2N6715

    Abstract: No abstract text available
    Text: 2N6715 SILICON NPN TRANSISTOR PACKAGE STYLE TO-237 DESCRIPTION: The 2N6715 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS IC 2.0 A VCE 40 V PDISS 2.0 W @ TC = 25 OC 0.85 W @ TA = 25 OC TJ -55 OC to +150 OC TSTG -55 OC to +150 OC


    Original     		PDF 2N6715 O-237 2N6715

    2N6715

    Abstract: 2N6714 2N6716
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N6714 2N6715 2N6716 TO-237 Plastic Package NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. E 1 = EMITTER 2 = BASE


    Original     		PDF ISO/TS16949 2N6714 2N6715 2N6716 O-237 C-120 2N6715 2N6714 2N6716

    Untitled

    Abstract: No abstract text available
    Text: 2N6719 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V).75 @I(C) (A) (Test Condition)30m


    Original     		PDF 2N6719 Freq30M

    2N6718

    Abstract: IC350 2N6718L
    Text: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 *High Power: 850mW *High Current: 1A


    Original     		PDF 2N6718 2N6718 850mW O-126C 2N6718L 2N6718-T6C-A-K 2N6718L-T6C-A-K O-126C QW-R217-007 IC350 2N6718L

    2N6718

    Abstract: No abstract text available
    Text: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR


    Original     		PDF 2N6718 2N6718 850mW QW-R201-056

    Untitled

    Abstract: No abstract text available
    Text: 2N6715 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.0


    Original     		PDF 2N6715 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: 2N6713 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)300 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)30m


    Original     		PDF 2N6713 Freq40M

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6718 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF 2N6718 250mA 500mA 250mA

    2N6714

    Abstract: 2N6715
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6714 2N6715


    Original     		PDF 2N6714 2N6715 2N6714 100mA* 100mA, 2N6715

    2N6715

    Abstract: MPS6715 HOTS
    Text: 2N6715/PN6715/MPS6715 NATL S E M I CO ND n r Sç Cr Rh Ef T tE f DI 11E » | • bSG113D 0 2 * 5- | I . 0 3 7 2 ^QC- C Tl National Semiconductor 2N6715 t PN6715 MPS6715 J^ ^*'237 El^ "92 Bc Bc TL/G/10100-S 'OS ebc TUG/10100-1 TUG/10100-4 NPN General Purpose Amplifier


    OCR Scan     		PDF hSG113D 2N6715 O-237 MPS6715 T0-22ME TL/G/10100-8 TUG/10100-1 TL/G/10100-4 10mAdc, 2N6715 MPS6715 HOTS

    2N6717

    Abstract: 2N6728 2N6716 92GU05 92GU06 T060
    Text: 92GU05,06 2N6716.17 NPN POWER TRANSISTORS 60-80 VOLTS 2 AMPS, 1.2 WATTS COMPLEMENTARY TO THE 2N6728, 29/92GU55, 56 SERIES Applications: • High Vc e ratings: 92GU05 = 60V min. VCEO 92GU06 = 80V min. VcEO EMITTER • Exceptional power-to-price ratio C A S E S TY LE TO-237


    OCR Scan     		PDF 2N6728, 29/92GU55, 92GU05 92GU06 92GU05/2N6716 92GU06A/2N6717 92GU05 2N6716 92GU06 2N6717 2N6728 2N6716 T060

    2N6730

    Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
    Text: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250


    OCR Scan     		PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 2N6730 2N6719

    CENW64

    Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
    Text: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50


    OCR Scan     		PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 CENW64 2N6730 2N6719

    2N6715

    Abstract: No abstract text available
    Text: 2N6714 2N6715 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH FE A T U R E S * * * 40 Volt V CE0 Gain of 50 at lc= 1 Am p P,0,= 1W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


    OCR Scan     		PDF 2N6714 2N6715 2N6715 100mA* 100mA

    2n6719

    Abstract: No abstract text available
    Text: . . w . . bflF- High VoltageAmplifiers Device V CE0 sust (Volts) Min 300 k bSQ113D 003^532 hfiT « N S C 5 NATL SEHIC0ND (DISCRETE ) lc (mA) V CE(sal) lc 4 U (Volts) Min fT Max Mia (mA) 2N6719 500 40 30 MMBTA42 500 40 30 0.5 20 500 40 30 0.5 20 500


    OCR Scan     		PDF 2N6719 MMBTA42 MPSA42 MMBTA92 MPSA92 bSQ113D 2N5401 MMBT5401 2N5400 MPSL51

    nsdu57

    Abstract: TO-237 2N6556 2N5415
    Text: NATL SEMICÔND DISCRETE ESE D • bSG113Q 0D377flfi 7 ■ T-2 7-01 PNP Medium Power Transistors by Ascending Vceo (Continued) H fe @ Ic/V ce Vce (sat) (V) Max Part No. Vceo (V) Min Max (mA/V) 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 D43C11


    OCR Scan     		PDF bSG113Q 0D377flfi 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 nsdu57 TO-237 2N6556 2N5415

    2sc498

    Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
    Text: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA­ CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE­ min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237


    OCR Scan     		PDF 2N6428 O-92A 2N6714 O-237 2N6726 2N6715 2N6727 2N6716 2sc498 2SC875 2SA503 2sc1175 FT501 2SA532 2SA606 2sa708

    2N6730

    Abstract: 2N6728 SE194 2N6716 7292n 2n 6718 2N6718 SE-194
    Text: Silicon Planar Medium Power Transistors NPN 2N6716 2N6717 2N6718 PNP 2N6728 2N6729 2N6730 FEATURES • High V CE ratin g s up to 1 00 vo lts • Exceptional p o w e r dissip atio n cap a bility - 2 W @ T c a s e = 2 5 °C - 1W @ T amb = 2 5 °C • h FE specified up to 5 0 0 m A


    OCR Scan     		PDF 2N6716 2N6717 2N6718 2N6728 2N6729 2N6730 SE194 2N6730 SE194 7292n 2n 6718 SE-194

    2N6726

    Abstract: 2N6714 2N6727 SE192 TRANSITON
    Text: Silicon Planar Medium Power Transistors 2N6715 2N6727 NPN 2N6714 PNP 2N6726 FEATU RES • Exceptional p ow er dissipation capability -2 W @ T case = 25°C - 1 W @ T amb = 2 5 ° C • h FE specified up to 1A • L o w saturation volatages D E S C R IP T IO N


    OCR Scan     		PDF 2N6714 2N6726 2N6715 2N6727 SE192 2N6726 2N6727 SE192 TRANSITON