Untitled
Abstract: No abstract text available
Text: APS00B MOUNTING DIMENSIONS ABSOLUTE MAXIMUM RATINGS MAGNETIC FLUX ROTATION -q SUPPLY VOLTAGE +q #12V POWER DISSIPATION 200mW TEMPERATURE -55 TO 150C CHARACTERISTICS @ 25C & 5V UNLESS OTHERWISE STATED 0.193 0.189 0.050 0,0 MIN SUPPLY VOLTAGE TEMPERATURE 0.016
|
Original
|
PDF
|
APS00B
200mW
AMOV04
25NOV04
08JUN11
25NOV03
5M-1982
|
M48T59Y-70PC1D
Abstract: No abstract text available
Text: M48T59 M48T59Y, M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, AND BATTERY FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION
|
Original
|
PDF
|
M48T59
M48T59Y,
M48T59V*
M48T59:
M48T59Y:
28-LEAD
M48T59Y-70PC1DS
M48T59Y
M48T59Y-70PC1D
|
BF964
Abstract: BF964SA BF964S BF964SB TO50 package
Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
|
Original
|
PDF
|
BF964S
BF964SA
BF964SB
BF964SA
BF96s
D-74025
BF964
BF964S
BF964SB
TO50 package
|
BF966SA
Abstract: BF966S BF966 BF966SB TO50 package MA1300
Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
|
Original
|
PDF
|
BF966S
BF966SA
BF966SB
BF966SA
BF966S
D-74025
BF966
BF966SB
TO50 package
MA1300
|
BF961
Abstract: TO50 package BF961A BF961B
Text: BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
|
Original
|
PDF
|
BF961
BF961A
BF961B
BF961s
D-74025
25-Nov-04
BF961
TO50 package
BF961B
|
BF988A
Abstract: BF988 BF988B TO50 package
Text: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance
|
Original
|
PDF
|
BF988
BF988A
BF988B
BF988A
BF988s
D-74025
25-Nov-04
BF988
BF988B
TO50 package
|
M48T59
Abstract: M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28
Text: M48T59 M48T59Y, M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, AND BATTERY FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION
|
Original
|
PDF
|
M48T59
M48T59Y,
M48T59V*
M48T59:
M48T59Y:
28-LEAD
M48T59
M48T59V
M48T59Y
M4T28-BR12SH
M4T32-BR12SH
SOH28
|
evi 330
Abstract: No abstract text available
Text: MOUNTING DIMENSIONS ABSOLUTE MAXIMUM RATINGS SUPPLY P OWE R VOLTAGE db 1 2 V DISSIPATION 2 0 OmW TEMPERATURE -55 TO 1500 CHARACTERISTICS * 25C & 5V UNLESS OTHERWISE STATED M 1N SUPPLY VOLTAGE MAX 5 TEMPERATURE BRIDGE TYP 50. 0 C .6 K OHMS 0. 9 .25 MA X O U T P U T A M P L I T U D E
|
OCR Scan
|
PDF
|
25NOV04
200mW
evi 330
|