Untitled
Abstract: No abstract text available
Text: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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15N120C
O-247
O-268
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15N12
Abstract: 575 C2
Text: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES
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15N120B
O-220AB
O-263
15N12
575 C2
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Untitled
Abstract: No abstract text available
Text: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW
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15N120B
O-247
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IC IGBT 15N120
Abstract: 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits
Text: IXRP 15N120 IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability IXRP 15N120 C IXRA 15N120 TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector
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15N120
O-220
O-263
O-220
IC IGBT 15N120
15n120
15n120 igbt
IXRP 15N120 IXYS
IXRA15N120
bi-directional switches IGBT
"bi-directional switches" IGBT
IXRP15N120
induction heating circuits
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15N120
Abstract: IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS
Text: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C
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15N120
O-220
20070703a
15N120
IC IGBT 15N120
bi-directional switches IGBT
"bi-directional switches" IGBT
15n120 igbt
igbt clip
igbt for induction heating ic
IXRP 15N120 IXYS
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15N120BD1
Abstract: 15N120 15N120CD1 IXGT15N120BD1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N120BD1
15N120CD1
O-247AD
15N120BD1
15N120
15N120CD1
IXGT15N120BD1
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IXSH15N120B
Abstract: No abstract text available
Text: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200
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15N120B
O-247
O-268
O-247)
13/1or
IXSH15N120B
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Untitled
Abstract: No abstract text available
Text: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C
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15N120C
O-220AB
O-263
728B1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N120C
O-220AB
O-263
O-220
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15N120
Abstract: No abstract text available
Text: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N120BD1
15N120
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IC IGBT 15N120
Abstract: 15n120 "bi-directional switches" IGBT bi-directional switches IGBT
Text: IXRH 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability C TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions
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15N120
O-220
O-263
O-263
O-220
IC IGBT 15N120
15n120
"bi-directional switches" IGBT
bi-directional switches IGBT
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HIGH Voltage IGBT with Diode = 30 A IXSH 15N120BD1 IC25 IXST 15N120BD1 V = 1200 V CES VCE sat = 3.4 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N120BD1
O-247
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15N120BD1
Abstract: 15N120CD1 IXGT15N120BD1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N120BD1
15N120CD1
O-247AD
O-268
15N120CD1
IXGT15N120BD1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V
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15N120B
15N120B
O-220
O-263
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20
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15N120B
15N120B
O-247
O-268
O-268AA
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V IC25 = 30 A VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20
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15N120B
15N120B
O-247
O-268
O-268AA
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFASTTM IGBT IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20
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15N120B
O-268
O-247
O-247)
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IC IGBT 15N120
Abstract: 15n120 H1AA1 "bi-directional switches" IGBT 15n120 igbt
Text: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220AB 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES
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15N120
O-220AB
20110120b
IC IGBT 15N120
15n120
H1AA1
"bi-directional switches" IGBT
15n120 igbt
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IC IGBT 15N120
Abstract: bi-directional switches IGBT 15n120
Text: IXRA 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES
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15N120
O-263AB
20110120b
IC IGBT 15N120
bi-directional switches IGBT
15n120
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms
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15N120AU1
O-247
-100/ps;
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RGE 17-18
Abstract: TO220-4 weight
Text: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i
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15N120C
O-220
O-263
RGE 17-18
TO220-4 weight
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM
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15N120C
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001-045
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20
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15N120B
15N120B
O-268
001-045
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RGE 17-18
Abstract: 10i2 TRI 1461
Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGA 15N120B IXGP 15N120B V CES IC25 V CE sat ^ fi(typ) Symbol T e s tC o n d itio n s V CES ^ = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES V GEM Continuous ±20 V
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15N120B
15N120B
T0-220
O-263
RGE 17-18
10i2
TRI 1461
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