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    25MJ Search Results

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    PAL20L10-25MJT/BV Rochester Electronics PAL20L10 - XOR Registered 24-Pin TTL Programmable Array Logic Visit Rochester Electronics Buy
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    25MJ Price and Stock

    ATGBICS QSFP-100G-AOC25M-JNP-C

    Compatible AOC 100G 25m
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    DigiKey QSFP-100G-AOC25M-JNP-C Bulk 7,156 1
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    STMicroelectronics VN5E025MJTR-E

    IC PWR SWTCH N-CHAN 1:1 PWRSSO12
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    DigiKey VN5E025MJTR-E Cut Tape 1,309 1
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    Newark VN5E025MJTR-E Reel 2,500
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    Chip 1 Exchange VN5E025MJTR-E 1,032
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    Avnet Silica VN5E025MJTR-E 143 Weeks 2,500
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    EBV Elektronik VN5E025MJTR-E 143 Weeks 2,500
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    Rochester Electronics LLC TLC1225MJB

    SINGLE ADC SAR 12 BIT+SIGN PARAL
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    DigiKey TLC1225MJB Bulk 51 5
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    STMicroelectronics VN5E025MJ-E

    IC PWR DRVR N-CHAN 1:1 PWRSSO12
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    KEMET Corporation PEH225MJ4140QE4

    CAP ALUM RAD 125C
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    25MJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IDT79RV3081-25MJ 1/3 IL08 C-MOS RISC CONTROLLER WITH FLOATING POINT ACCELERATOR VDD (+5 V) GND GND VDD (+5 V) GND VDD (+5 V) VDD (+5 V) GND GND VDD (+5 V) GND VDD (+5 V) NC GND VDD (+5 V) GND VDD (+5 V) GND VDD (+5 V) 74 73 72 71 70 69 68 67 66 65 64 63


    Original     		PDF IDT79RV3081-25MJ R3051

    Untitled

    Abstract: No abstract text available
    Text: * IDT79R3081-25MJ 1/3 IL00 C-MOS RISC CPU 1 GND VDD(+5V) 80 75 GND 5 VDD(+5V) 10 GND VDD(+5V) —TOP VIEW— GND VDD(+5V) 15 70 VDD(+5V) GND 20 GND VDD(+5V) 65 25 60 GND VDD(+5V) VDD(+5V) 35 PIN I/O No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


    Original     		PDF IDT79R3081-25MJ 32X32) R3051 16KB/8KB)

    NTE2954

    Abstract: No abstract text available
    Text: NTE2954 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Low Gate Charge: 147nC Typ D Low Reverse Transfer Capacitance: 300pF Typ D Fast Switching D 100% Avalanche Tested D Imporved dv/dt Capability Absolute Maximum Ratings: TC = +25°C unless otherwise specified


    Original     		PDF NTE2954 147nC 300pF NTE2954

    FUR460

    Abstract: GUR460 UF4007 SMD Spice UF5408 MUR Motorola fast diode UF5400 "spice model" uf5408 SMD diode SMA UF4007 GENERAL SEMICONDUCTOR SMD DIODES mur 460 data
    Text: N E GUR440 & GUR460 MUR440 & MUR460 Ultrafast Axial-Leaded Rectifiers W P R O New Four Ampere Axial Introduction GUR460 Features Cross Reference GUR460 Applications Ultrafast Recovery FER Selector Chart Spice Model Parameters D U To view the datasheets please click here ➔


    Original     		PDF GUR440 GUR460 MUR440 MUR460 GUR460 GUR440, GUR460, MUR440 MUR460. FUR460 UF4007 SMD Spice UF5408 MUR Motorola fast diode UF5400 "spice model" uf5408 SMD diode SMA UF4007 GENERAL SEMICONDUCTOR SMD DIODES mur 460 data

    g7n60

    Abstract: g7n60a
    Text: HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		PDF HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 HGTG7N60A4 150oC. 100kHz 200kHz 125oC g7n60 g7n60a

    G60T120

    Abstract: IGW60T120 IGBT 1200V 60A PG-TO-247-3
    Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications


    Original     		PDF IGW60T120 G60T120 IGW60T120 IGBT 1200V 60A PG-TO-247-3

    2SD1325

    Abstract: 25mJ
    Text: Power Transistors 2SD1325 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage


    Original     		PDF 2SD1325 2SD1325 25mJ

    SGW25N120

    Abstract: IGBT 1200V 60A
    Text: Preliminary SGW25N120 Fast S-IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		PDF SGW25N120 O-247AC Q67040-S4277 Mar-00 SGW25N120 IGBT 1200V 60A

    sgw25n120

    Abstract: No abstract text available
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original     		PDF SGW25N120 SGW25N120

    Untitled

    Abstract: No abstract text available
    Text: Target IGW60T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers :


    Original     		PDF IGW60T120 O-247AC Q67040-S4521 Feb-02

    k25n120

    Abstract: No abstract text available
    Text: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode • 40lower Eoff compared to previous generation  Short circuit withstand time – 10 s  Designed for: - Motor controls - Inverter G - SMPS  NPT-Technology offers:


    Original     		PDF SKW25N120 40lower PG-TO-247-3 K25N120 k25n120

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1325 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 ● ● Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage


    Original     		PDF 2SD1325

    g25n120

    Abstract: SGW25N120 PG-TO-247-3-21 G25N120 TSC
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original     		PDF SGW25N120 PG-TO-247-3-1 O-247AC) G25N120 PG-TO-247-3-21 SGW25N120 PG-TO-247-3-21 G25N120 TSC

    igbt sgw25n120

    Abstract: 50S INFINEON SGW25N120 ir igbt 1200V 40A IGBT 1200V 60A igbt to247 PG-TO-247-3 igbt 1200V 40A short circuit
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original     		PDF SGW25N120 PG-TO-247-3 SGW25N120 igbt sgw25n120 50S INFINEON ir igbt 1200V 40A IGBT 1200V 60A igbt to247 PG-TO-247-3 igbt 1200V 40A short circuit

    SKW25N120

    Abstract: IGBT 200A 1200V
    Text: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		PDF SKW25N120 40lower P-TO-247-3-1 O-247AC) O-247AC Q67040-S4282 Jul-02 SKW25N120 IGBT 200A 1200V

    PowerDI-123

    Abstract: SBR3U30P1 PowerDI123 RSX101M-30 PMDU SBR2U30P1 336V RB160M 16kv 5ma diode Schottky Diode 30V 1A SOD diodes toshiba
    Text: New Product Announcement January 17, 2007 Announcing Industry-First 3 Ampere High Performance SBR Technology in PowerDITM123 Package SBR® Super Barrier Rectifier Package Cross Section Diodes, Inc. patented interlocking clip construction and a flat lead frame heat-sink solder pad result in higher power


    Original     		PDF PowerDITM123 SBR3U30P1, SBR2U30P1, SBR2A30P1, SBR2A40P1 SBR3U30P1) PowerDITM123 PowerDI-123 SBR3U30P1 PowerDI123 RSX101M-30 PMDU SBR2U30P1 336V RB160M 16kv 5ma diode Schottky Diode 30V 1A SOD diodes toshiba

    G60T120

    Abstract: PG-TO-247-3-21
    Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications


    Original     		PDF IGW60T120 G60T120 PG-TO-247-3-21

    G60T120

    Abstract: No abstract text available
    Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications


    Original     		PDF IGW60T120 15stances. G60T120

    K25N120

    Abstract: No abstract text available
    Text: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers:


    Original     		PDF SKW25N120 40lower SKW25N120 K25N120

    transistor TIP 42

    Abstract: TIP 42 transistor Tl 5153 transistor tip 3055 transistor tip 5530 B0738 TIP 122 transistor TIP110 TIP111 TIP 3055 transistor
    Text: TYPES TIP115, TIP116, TIP117 P-N-P DARLINGTON-CONNECTED SILICON POW ER TR A N SISTO R S D ESIG NED IFOR C O M P L E M E N T A R Y USE W ITH T IP 1 10, T IP 1 11, T IP 112 • High SOA Capability, 40 V and 1.25 A 50 W at 25°C Case Temperature Min hpE of 500 at 4 V , 2 A


    OCR Scan     		PDF TIP115, TIP116, TIP117 TIP110, TIP111, TIP112 25-mJ TIP115 TIP116 transistor TIP 42 TIP 42 transistor Tl 5153 transistor tip 3055 transistor tip 5530 B0738 TIP 122 transistor TIP110 TIP111 TIP 3055 transistor

    7N60a4

    Abstract: LG 631 IC TA49331 LG 631 HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26 transistor st make 803
    Text: HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 in t e r r ii J a n u a ry . m D ata S h eet File N u m b er i 4826 Features 600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    OCR Scan     		PDF HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 TA49331. 7N60a4 LG 631 IC TA49331 LG 631 HGTD7N60A4S HGTD7N60A4S9A LD26 transistor st make 803

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: INTRODUCTION PLASTIC ENCAPSULATED TRAN SISTO RS TRI ACS AND THYRISTO RS This catalogue provides technical descriptions and specifications on Plastic Power Semiconductors manufactured by Texas Instruments. From the earliest days o f transistors Sem iconductor C ircuit Designers have


    OCR Scan     		PDF

    T1P116

    Abstract: TIP112 TIP115 TIP117
    Text: PANASONIC INDL/ELEK -CIO ^•=132052 D01D441 t, 1SE D Darlington Silicon PNP Power Transistors T-33-3Í TO-220 Package Absolute Maximum Ratings Ta=25°C Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current


    OCR Scan     		PDF O-220 001Q441 T-33-3 Ta-25Â TIP115 TIP112 i32fl52 0D1D442 100x100 T1P116 TIP112 TIP115 TIP117