ZX5T869Z
Abstract: ZX5T869ZTA
Text: ZX5T869Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T869Z
ORD26100
ZX5T869Z
ZX5T869ZTA
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sot89 "NPN TRANSISTOR"
Abstract: MARKING 7A SOT89 NY TRANSISTOR MAKING ZX5T869Z ZX5T869ZTA
Text: ZX5T869Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 6.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T869Z
sot89 "NPN TRANSISTOR"
MARKING 7A SOT89
NY TRANSISTOR MAKING
ZX5T869Z
ZX5T869ZTA
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ZXTN2005Z
Abstract: ZXTN2005ZTA
Text: ZXTN2005Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2005Z
INFORMAT26100
ZXTN2005Z
ZXTN2005ZTA
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ZXTN25012EZ
Abstract: TS16949 ZXTN25012EZTA ZXTP25012EZ
Text: ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation
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ZXTN25012EZ
ZXTP25012EZ
D-81541
ZXTN25012EZ
TS16949
ZXTN25012EZTA
ZXTP25012EZ
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2005Z
Abstract: No abstract text available
Text: ZXTN2005Z 25V NPN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTN2005Z
2005Z
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APM2050N
Abstract: APM2050 APM2050ND STD-020C apm*2050n
Text: APM2050ND N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON =25mΩ(typ.) @ VGS=10V RDS(ON)=30mΩ(typ.) @ VGS=4.5V RDS(ON)=50mΩ(typ.) @ VGS=2.5V • • • Top View of SOT-89 Super High Dense Cell Design Reliable and Rugged
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APM2050ND
OT-89
APM2050N
APM2050N
APM2050
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
APM2050
APM2050ND
STD-020C
apm*2050n
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apm2050
Abstract: APM2050N apm*2050n APM2050ND A102 marking code IR SOT89 apm20
Text: APM2050ND N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON =25mΩ(Typ.) @ VGS=10V G RDS(ON)=30mΩ(Typ.) @ VGS=4.5V D RDS(ON)=50mΩ(Typ.) @ VGS=2.5V • • • S Top View of SOT-89 Super High Dense Cell Design Reliable and Rugged
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APM2050ND
OT-89
APM2050N
apm2050
APM2050N
apm*2050n
APM2050ND
A102
marking code IR SOT89
apm20
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sem 2005 ic equivalent
Abstract: No abstract text available
Text: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line
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ZXTP2009Z
-60mV
TP2009ZTA
sem 2005 ic equivalent
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Untitled
Abstract: No abstract text available
Text: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits,
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-60mV
WIDTH161
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25M SOT89
Abstract: ST5415
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5
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O-37var
O-220
O-220AB
25M SOT89
ST5415
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bf223
Abstract: PE210C BF311 PE210B 2SC1293 bfy88 BF330 nec RF package SOT89 2SC1260 BF497
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293
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BSW43
BSX52
MMBT41o-X
O-92var
O-23S
O-10S
O-20SM
O-23Svar
bf223
PE210C
BF311
PE210B
2SC1293
bfy88
BF330
nec RF package SOT89
2SC1260
BF497
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2SC288a
Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO -5 10 15 20 25 30 35 40 2N3600 2SC251 2SC251A 2SC251A 2SC252 2SC252 2SC253 BFX73 2N2729 M90 BF689 BF689 BFS17 2SC387 AG-TM 2N3833 2N3833 2N3834 2N3834 2N3834 2N3835 2N3835 K2115 ST2120 MMBR2857 40517
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Motorola MPSU95
Abstract: 2N3205 2S8632K SML3552 80376 2S81188 25M SOT89 2S81
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab
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2S81188
2S8891
2S8632K
SML3552
SML3575
SML3578
SML69501
SML69509
Motorola MPSU95
2N3205
80376
25M SOT89
2S81
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2N3633
Abstract: transitron 2N3596 INDUSTRO 2n3605 transitron 2n3605 TEXAS 2N3583 philco-ford 2N3609
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5
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tl2222a
Abstract: 2N5381 A5T3904 2sc2720 GG20N 2n3688 mmt3904 sot23 80ng MM3904 BF252
Text: RF LOW•POWER SILICON NPN Item Number Part Number V BR CEO 5 10 UPI2222B PN3947 PN3947 PN3947 BSX32 2N6375 BSR17R 5MBT3904 SOR3904 (A) P2N2222A ~t~~~2A 15 20 25 30 S03904 TL2222A TMPT3904 BSS67 BSS67R TP5381 A5T3904 EN3904 EN3_904 MMBT3904 MMT3904 MM3904 MM3904
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UPI2222B
PN3947
BSX32
2N6375
BSR17R
5MBT3904
SOR3904
P2N2222A
tl2222a
2N5381
A5T3904
2sc2720
GG20N
2n3688
mmt3904 sot23
80ng
MM3904
BF252
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2N6805
Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab
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2S81188
2S8891
2S8632K
SML3552
SML3575
SML3578
SML69501
SML69509
2N6805
2N6456
2N6803
20C36
2NJ771
RCA 2n6674
20C84
2N6617
2NJ771A
2N6525
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PA6015A
Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
Text: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219
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2Nl199A
2N770
2N3511
2N918
2N1268
2N1271
2N1139
2N728
FMMT2369
PA6015A
2n2570
KT3101A-2
BF250
SG119
2N1269
2SC1071
2S078
LOW-POWER SILICON NPN
PA6015
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bfw34 diode
Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386
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2N1972
2N909
ST6600
ST6601
SA2715
BSX70
2SC562
2N479
2N479A
bfw34 diode
LOW-POWER SILICON NPN
BFR36
NA31
L/bfw34 diode
2SC941
bfw34
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2SC1312
Abstract: 2SC1840E BA 92 SAMSUNG TI480 2N2888 LOW-POWER SILICON NPN 2SC900 PET8002 2N2856 25M SOT89
Text: LOW-POWER SILICON NPN Item Number Part Number 5 -10 NB211XJ NB211YJ MMBC1622D7 MMBC1622D7 MMBC1622D7 2SC1840F 2SCl840F NBOllEU NBOllFU NB013EU ~gg~~~~ -15 20 NBOllFK NB013EK NB013FK NB013FL PET8002 PET8004 MMBC1622D8 MMBC1622D8 TMPT1622000 25 30 2SC1840E 2SCl840E
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NB211XJ
NB211YJ
MMBC1622D7
2SC1840F
2SCl840F
NB013EU
NB013EK
NB013FK
2SC1312
2SC1840E
BA 92 SAMSUNG
TI480
2N2888
LOW-POWER SILICON NPN
2SC900
PET8002
2N2856
25M SOT89
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Untitled
Abstract: No abstract text available
Text: ZXTP2013Z 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line
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ZXTP2013Z
-100V
TP2013ZTA
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Untitled
Abstract: No abstract text available
Text: ZXTP2008Z 30V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line sw itching and
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ZXTP2008Z
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BEL187
Abstract: NA22XX BC262A LOW-POWER SILICON PNP 2SA523 NA22XH
Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO -5 -10 -15 20 Sanyo Elect Sanyo Elect NthAmerSemi CrimsonSemi CentralSemi NthAmerSemi V/O Electro Sanyo Elect Sanyo Elect Sanvo Elect ~~:~~~8U ~anyo ~Iect BEl187 2N3576 2N5455 2N5056 ST5771-1 ST5771-2
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2SB1296
2SB1295
BFX12
BFX13
KT361
2SB1118S
2SB808
2SB1118E
BEL187
NA22XX
BC262A
LOW-POWER SILICON PNP
2SA523
NA22XH
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX596 ISSUE 3 - NOVEMBER 1995_ O P A R T M A R K IN G D E T A IL - P96 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Collector-Base Voltage VALUE UNIT V V V CBO -220 Collector-Emitter Voltage V CEO
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OCR Scan
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FCX596
-100m
-250mA
-250m
100MHz
FMMT596
-400m
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 OCTOBER 1995_ O_ FEATURES * 150 Volt VCE0 * 1 A m p continuous current P A R T M A R K IN G D E T A IL - N95 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L VALUE UNIT VCBO 170 V Collector-Emltter Voltage
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OCR Scan
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250mA,
500mA,
500mA
100MHz
300ns.
FMMT495
aOCH25t.
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