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    2SC387 Search Results

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    2SC387 Price and Stock

    New Jersey Semiconductor Products Inc 2SC3870

    TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC3870 96
    • 1 $6
    • 10 $3
    • 100 $2.6
    • 1000 $2.6
    • 10000 $2.6
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    NEC Electronics Group 2SC387A

    RF SMALL SIGNAL BIPOLAR TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC387A 56
    • 1 $2.6
    • 10 $2.6
    • 100 $0.975
    • 1000 $0.975
    • 10000 $0.975
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    Toshiba America Electronic Components 2SC387

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC387 29
    • 1 $22.5
    • 10 $20
    • 100 $18.5
    • 1000 $18.5
    • 10000 $18.5
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    2SC387 Datasheets (79)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC387 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC387 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC387 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC387 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC387 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC387 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC387 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC387 Unknown Cross Reference Datasheet Scan PDF
    2SC387 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC387 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC387 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC387 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC387 Unknown Vintage Transistor Datasheets Scan PDF
    2SC3870 Panasonic Silicon NPN triple diffusion type Original PDF
    2SC3870 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3870 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3870 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3870 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3871 Panasonic Silicon NPN triple diffusion planar type Power Transistor Original PDF
    2SC3871 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SC387 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3875

    Abstract: ALY TRANSISTOR 2SC3875-GR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr 2SC3875-Y Elite Enterprises
    Text: 2SC3875 NPN Epitaxial Silicon Transistor SOT-23 GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings TA=25oC Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage


    Original     		PDF 2SC3875 OT-23 150mW 100mA, 100MHz 2SC3875-G 2SC3875-Y 2SC3875-GR 2SC3875 ALY TRANSISTOR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr Elite Enterprises

    2SC3871

    Abstract: No abstract text available
    Text: Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage


    Original     		PDF 2SC3871 2SC3871

    2SC3875

    Abstract: No abstract text available
    Text: ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3875 100mA, 2SC3875

    2SC3876

    Abstract: No abstract text available
    Text: ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3876 100mA 400mA 100mA, 2SC3876

    2SC3875

    Abstract: No abstract text available
    Text: ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3875 100mA, 2SC3875

    2SC3876

    Abstract: No abstract text available
    Text: ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3876 100mA 400mA 100mA, 2SC3876

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage


    Original     		PDF 2SC3871

    2SC288a

    Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO -5 10 15 20 25 30 35 40 2N3600 2SC251 2SC251A 2SC251A 2SC252 2SC252 2SC253 BFX73 2N2729 M90 BF689 BF689 BFS17 2SC387 AG-TM 2N3833 2N3833 2N3834 2N3834 2N3834 2N3835 2N3835 K2115 ST2120 MMBR2857 40517


    Original     		PDF

    2SC3874

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC3874 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2


    Original     		PDF 2SC3874 2SC3874

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC3873 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500


    Original     		PDF 2SC3873

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage


    Original     		PDF 2SC3874

    2SC3874

    Abstract: No abstract text available
    Text: Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm φ 3.3±0.2 5.0±0.3 3.0 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SC3874 2SC3874

    2SC3871

    Abstract: No abstract text available
    Text: Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SC3871 2SC3871

    2SC3872

    Abstract: No abstract text available
    Text: Power Transistors 2SC3872 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ● High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Full-pack package which can be installed to the heat sink with


    Original     		PDF 2SC3872 2SC3872

    2SC3873

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3873 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High VCBO ·High speed switching ·Good linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high speed switching applications


    Original     		PDF 2SC3873 2SC3873

    2SC3874

    Abstract: No abstract text available
    Text: Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V


    Original     		PDF 2SC3874 2SC3874

    2SC3874

    Abstract: 2SC387
    Text: Inchange Semiconductor Product Specification 2SC3874 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high-speed switching applications PINNING PIN DESCRIPTION


    Original     		PDF 2SC3874 2SC3874 2SC387

    2SC387

    Abstract: No abstract text available
    Text: Power Transistors 2SC3871 2SC3871 Silicon P N P Trip le-D iffu sed Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching U n it I : • Features 4 .4 m a x . • High speed switching • High collector-base voltage 2.9max, V cbo


    OCR Scan     		PDF 2SC3871 sc387 T32fiS2 2SC387

    2SC3872

    Abstract: 001695
    Text: Power T ransistors 2SC3872 2SC3872 Silicon PNP Triple-Diffused Planar Type • P ackage Dim ensions High Breakdown Voltage, High Speed Switching U n it I mm ■ Features • High speed switching • High collector-base voltage V c b o • Wide area of safety operation (ASO)


    OCR Scan     		PDF 2SC3872 bT32flSB 2SC3872 001695

    2SC1815

    Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
    Text: - 10 2 - £ tt € Manuf. 2SC 944$ a « 2SC 945 / s n 2SC 947 ^ T 2SC 948 ^ te T m Type No. * * * h SANYO * M B TOSHIBA S NEC B ÍL HITACHI 2SC1907 2SC1215 2SC2926 2SC458 2SC2634 2SC2410 2SC828 2SC387A %rBM 2SC1959 2SC945 2SC454 WrB m 2SU»4ö 2SC454 *


    OCR Scan     		PDF 2SC944 2SC945 2SC947 2SC948 2SC1815 2SC387A 2SC1959 2SC1626 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458

    2SC3498

    Abstract: 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295
    Text: - tt Type No. E S Manuf. ft SANYO m Ä 3E TOSHIBA NEC B ±L HITACHI Ä ± ü FUJITSU T MATSUSHITA 2SC 3432 B m. 2SC4161 ZSU356Z • ’ SC2739 2SC 3433 a m 2SC4162 2SC3562 2SC3871 2 SC 3434 b m 2SC4423 2SC3306 2SC3210 2SC 3435 / B » 2SC4424 2SC3498 2SC 3436


    OCR Scan     		PDF 2SC3432 2SC3433 2SC3434 2SC3435 2SC3436 2SC3437 2SC3438 2SC3439 2SC3440 2SC3441 2SC3498 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295

    2SC3873

    Abstract: b326s
    Text: Power Transistors b^BSflS4 D O I M M TT3 M P N C B 2SC3873 PANASONIC INDL/ELEK SEMI 2SC3873 b'iE » Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it • Features 6 .9 m in . • High speed switching


    OCR Scan     		PDF 2SC3873 2SC3873 b326s

    2SC3763

    Abstract: 2SD1267A 2SC3536 RT1N140C 2SC3691 2SC3855 3845 3844 3841 3843
    Text: - 174 - a s tt Type No. « Manuf. m = SANYO JIC ^ TOSHIBA B ^ NEC B HITACHI í ± 3 FUJITSU tfi T MATSUSHITA 2SC 3828 K 2SC 3829 ífi T 2SC 3830 -y-VÍTV -y-V'TV 2SC3087 2SC2335 2SC3090 2SC3536 2SC 3832 ✓ 2SC3039 2SC2335 2SC2898 2SC3870 2SC 3833 -y-yry


    OCR Scan     		PDF 2SC4085 2SC4415 2SC3356 2SC3513 2SC3087 2SC2335 2SC3870 2SC3090 2SC3536 2SC3872 2SC3763 2SD1267A 2SC3536 RT1N140C 2SC3691 2SC3855 3845 3844 3841 3843

    106m1

    Abstract: 2SC3871 J300C
    Text: Power Transîstors 2SC3871 2SC3871 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features U n it I mm 4.4m ax. • H igh s p e e d sw itch in g • H igh c o lle c to r-b a s e v o ltag e ►2.9max.


    OCR Scan     		PDF 2SC3871 106m1 2SC3871 J300C