thyristor 5STP 25L5200
Abstract: 5STP25L5200
Text: VDSM = 5200 V ITAVM = 2760 A ITRMS = 4340 A ITSM = 42000 A VT0 = 1.00 V rT = 0.225 mΩ Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA1008-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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5SYA1008-03
25L5200
25L5200
25L5000
25L4600
67xVDRM
11ing
CH-5600
thyristor 5STP 25L5200
5STP25L5200
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Untitled
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 2760 A 4340 A 42000 A 1V 0.225 mΩ Ω Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA1008-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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25L5200
5SYA1008-03
25L5000
25L4600
CH-5600
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDSM = 5200 ITAVM = 2500 ITRMS = 3920 ITSM = 42000 VT0 = 1.00 rT = 0.225 V A A A V mΩ Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA 1008-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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Original
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PDF
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25L5200
25L5200
25L5000
25L4600
67xVDRM
CH-5600
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5STP25L5200
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 2760 A 4340 A 42000 A 1.00 V 0.225 mΩ Ω Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA1008-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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25L5200
5SYA1008-03
25L5200
25L5000
25L4600
CH-5600
5STP25L5200
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