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    25K1 Price and Stock

    TDK Corporation CGA4J3X7R1C225K125AB

    CAP CER 2.2UF 16V X7R 0805
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    DigiKey CGA4J3X7R1C225K125AB Reel 452,000 2,000
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    Avnet Americas CGA4J3X7R1C225K125AB Reel 510,000 24 Weeks 2,000
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    Newark CGA4J3X7R1C225K125AB Cut Tape 134,850 1
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    CGA4J3X7R1C225K125AB Reel 10,000 2,000
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    Bristol Electronics CGA4J3X7R1C225K125AB 4,010
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    CGA4J3X7R1C225K125AB 520 21
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    Avnet Abacus CGA4J3X7R1C225K125AB Reel 29 Weeks 2,000
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    Chip One Stop CGA4J3X7R1C225K125AB Cut Tape 6
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    YAGEO Corporation MF0207FTE52-5K1

    RES 5.1K OHM 1% 0.6W AXIAL
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    DigiKey MF0207FTE52-5K1 Cut Tape 15,563 1
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    MF0207FTE52-5K1 Ammo Pack 10,000 5,000
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    Newark MF0207FTE52-5K1 Bulk 4,180 10
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    Avnet Abacus MF0207FTE52-5K1 20 Weeks 5,000
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    Ozdisan Elektronik MF0207FTE52-5K1
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    TDK Corporation C3216X5R1E225K160AA

    CAP CER 2.2UF 25V X5R 1206
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    DigiKey C3216X5R1E225K160AA Cut Tape 6,427 1
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    C3216X5R1E225K160AA Digi-Reel 6,427 1
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    C3216X5R1E225K160AA Reel 6,000 2,000
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    Newark C3216X5R1E225K160AA Cut Tape 800 1
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    YAGEO Corporation RSF-50JT-52-5K1

    RES 5.1K OHM 5% 1/2W AXIAL
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    DigiKey RSF-50JT-52-5K1 Cut Tape 4,974 1
    • 1 $0.19
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    RSF-50JT-52-5K1 Ammo Pack 4,000 1,000
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    Avnet Americas RSF-50JT-52-5K1 Reel 24 Weeks 5,000
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    TDK Corporation C3216X8L1H225K160AC

    CAP CER 2.2UF 50V X8L 1206
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    DigiKey C3216X8L1H225K160AC Digi-Reel 3,638 1
    • 1 $0.75
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    C3216X8L1H225K160AC Cut Tape 3,638 1
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    Newark C3216X8L1H225K160AC Cut Tape 2,265 5
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    Chip One Stop C3216X8L1H225K160AC Cut Tape 50
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    25K1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    25K16X CEIEC IC LUMINANCE DELAY LINE Original PDF

    25K1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET High Voltage STRAIGHT JACK Inserts 25K101-200 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Similar to DIN 41626/2 Documents N/A Material and plating RF_35/12.04/3.0 Connector parts Center contact Dielectric


    Original
    25K101-200 D-84526 PDF

    M5207L01

    Abstract: M5281AL 155133 2SK118Y m5216al 2SC2458GR M5207 2SA1048GR HEC2392-01-150 M5207L
    Text: IC1A M5207L01 4 INPUT P8 2 Q4 25K1845R C8 0.047µF P7 C7 10pF 3 1 C4 10µ/16V IC1B M5207L01 + JK2 SG-7713 R15 10kΩ C5 1µF/50V + 6 R15 1MΩ R11 10kΩ R7 1MΩ R12 22kΩ D3 155133 10 C6 R9 10µ/16V 10kΩ + 7 9 2 3 8 5 TR-2 TREMOLO PCB ASSY 70901390 Q3


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    M5207L01 25K1845R SG-7713 F/50V 2SK118Y M5216AL 2SC2458GR M5207L01 M5281AL 155133 2SK118Y m5216al 2SC2458GR M5207 2SA1048GR HEC2392-01-150 M5207L PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET High Voltage STRAIGHT JACK Inserts 25K101-200 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Similar to DIN 41626/2 Documents N/A Material and plating RF_35/12.04/3.0 Connector parts Center contact Dielectric


    Original
    25K101-200 D-84526 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking M P Absolute Maximum Ratings (Ta = 25°C)


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    MT3S150P SC-62 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V


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    2SA1384 2SC3515 PDF

    RN5003

    Abstract: RN6003
    Text: RN5003 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN5003 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


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    RN5003 RN6003 SC-62 961001EAA2' RN5003 RN6003 PDF

    2SA1204

    Abstract: No abstract text available
    Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


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    2SA1204 2SC2884 SC-62 2SA1204 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Unit: mm Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = -1 V, IC = −4 A)


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    2SA1314 2SC2982 PDF

    2SK3658

    Abstract: No abstract text available
    Text: 2SK3658 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


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    2SK3658 2SK3658 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S111P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111P ○ VHF~UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=0.95 dB 標準 (@ f=1 GHz) •


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    MT3S111P SC-62 PDF

    2SA1204

    Abstract: 2SC2884
    Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


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    2SC2884 2SA1204 2SA1204 2SC2884 PDF

    2SC5713

    Abstract: No abstract text available
    Text: 2SC5713 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5713 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.5 A 直流電流増幅率が高い。


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    2SC5713 SC-62 20070701-JA 2SC5713 PDF

    2SA1735

    Abstract: 2SC4540
    Text: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ・エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)


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    2SC4540 2SA1735 SC-62 20070701-JA 2SA1735 2SC4540 PDF

    2SC5819

    Abstract: No abstract text available
    Text: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


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    2SC5819 2SC5819 PDF

    2SA1736

    Abstract: 2SC4541
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)


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    2SA1736 2SC4541 2SA1736 2SC4541 PDF

    25K120

    Abstract: 80 amp 30v npn darlington OA 70 25K200 pmd25k120 PMD25K200
    Text: A LAMBDA SWITCHING POWER DARLINGTONS PMD 25K SERIES 150 WATT 9 AMP CONTINUOUS, 12 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 25K120 P M D 25K150 PM D 25K200 FEATURES • Electrical specifications guaranteed for operating junction temperature range of


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage


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    2SC3607 -j250 PDF

    marking pd

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ360 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1.6MAX


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    2SJ360 --100//A --60V) marking pd PDF

    Untitled

    Abstract: No abstract text available
    Text: RN5001 RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. P O W ER SW IT C H IN G APPLICATIONS. J53= 1.7MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process


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    RN5001 RN5001) RN6001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN5003 Unit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. P O W ER SW ITCH IN G APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


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    RN5003 RN6003 250mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN5002 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. i f 6 MAX- PO W ER SW IT C H IN G APPLICATIONS. 0 .4 ± 0 .05 1.7 MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process


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    RN5002 RN6002 --10V, PDF

    2SA1202

    Abstract: 2SC2882
    Text: T O S H IB A 2SA1202 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER AM PLIFIER APPLICATIONS Unit in mm VOLTAGE AM PLIFIER APPLICATIONS 1.6MAX. —I— 4.6MAX. • Suitable for driver of 30~35 Watts Audio Amplifier • P q = 1~2W (Mounted on CeramicSubstrate)


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    2SA1202 2SC2882 PDF

    2SJ465

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ465 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ465 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX.


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    2SJ465 -200juA) PDF

    LAMBDA Voltage Regulator LAS14AU

    Abstract: LAS14AU lambda LAS 14 AU lambda LAS lambda "LAS 14 au" EANAL LAS-1400 as-1405 LAMBDA Voltage Regulator LAS-14AU
    Text: LAMBDA LAS 1400,14AU SERIES 3 AMP POSITIVE VOLTAGE REGULATOR FEATURES • Guaranteed input-output differential: LAS01400/+2.50 volts LAS014AU/+2.30 volts • Guaranteed temperature coefficient: LAS-1400/00 C to +125° C: 0.02% Vo/° C LAS-14AU/00 C to +125° C: 0.02% Vo/° C


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    1400f LAS01400/ LAS-1400/0Â LAS014AU/ LAS-14AU/00 LAS-1400/1 LAS-1400/60dB LAS-14AU/1 LAS-14AU/66dB LAS-1400/2 LAMBDA Voltage Regulator LAS14AU LAS14AU lambda LAS 14 AU lambda LAS lambda "LAS 14 au" EANAL LAS-1400 as-1405 LAMBDA Voltage Regulator LAS-14AU PDF