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Catalog Datasheet	MFG & Type	Document Tags	PDF
cep6060 Abstract: u1520 IDM144 S1200 TQ-220 Text: mu CEP6060/CEB6060 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 4 8 A , Rds on =25i7iQ @Vgs=10V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package.	OCR Scan	CEP6060/CEB6060 25itiQ TQ-220 O-263 to-263 cep6060 u1520 IDM144 S1200 TQ-220	PDF

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cep6060

Abstract: u1520 IDM144 S1200 TQ-220
Text: mu CEP6060/CEB6060 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 4 8 A , Rds on =25i7iQ @Vgs=10V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package.

OCR Scan

CEP6060/CEB6060 25itiQ TQ-220 O-263 to-263 cep6060 u1520 IDM144 S1200 TQ-220

PDF