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    1888655-1

    Abstract: 6116317-1
    Text: 107-68094 Packaging Specification 25Feb10 Rev M STACKED MOD JK ASSY, 2X8, 8 POSN 1. PURPOSE 目的 Define the packaging specifiction and packaging method of STACKED MOD JK ASSY, 2X8, 8 POSN product. 订定 STACKED MOD JK ASSY, 2X8, 8 POSN 产品之包装规格及包装方式。


    Original     		PDF 25Feb10 QR-ME-030B 1888655-1 6116317-1

    1116526-1

    Abstract: 555780 5558310-1 558342-1 5406491-X CAT-5 406285-X tyco 5557560-1
    Text: 107-68025 Packaging Specification 25Feb10 Rev AB MODULAR TELEPHONE JACK 1. PURPOSE 目的 Define the packaging specification and packaging method of MODULAR TELEPHONE JACK products. 订定 MODULAR TELEPHONE JACK 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围


    Original     		PDF 25Feb10 X-5406206-X X-406206-X X-5406203-X X-406203-X X-5406299-X X-406299-X 48TUBE86( QR-ME-030B 1116526-1 555780 5558310-1 558342-1 5406491-X CAT-5 406285-X tyco 5557560-1

    sharp laser diodes

    Abstract: TSOP855
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0090-1010 sharp laser diodes TSOP855

    17024

    Abstract: AN609 IRF510S
    Text: IRF510S_RC, SiHF510S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF510S SiHF510S AN609, 25-Feb-10 17024 AN609

    Si4178DY

    Abstract: 7313 AN609
    Text: Si4178DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4178DY AN609, 25-Feb-10 7313 AN609

    transistor 6822

    Abstract: 6822 mosfet 4800 transistors 6822 6822 transistor 731 MOSFET 4800 mosfet AN609 38734
    Text: SiZ710DT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiZ710DT AN609, 25-Feb-10 transistor 6822 6822 mosfet 4800 transistors 6822 6822 transistor 731 MOSFET 4800 mosfet AN609 38734

    AN609

    Abstract: IRF520 SiHF520
    Text: IRF520_RC, SiHF520_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF520 SiHF520 AN609, 25-Feb-10 AN609

    TSOP35D25

    Abstract: TSAL6200
    Text: TSOP35D25 Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Center frequency at 25 kHz to reduce interference with IR remote control signals at 30 kHz to 56 kHz • Package can be used with IR emitters with wavelength 830 nm as well as standard 940 nm


    Original     		PDF TSOP35D25 18-Jul-08 TSOP35D25 TSAL6200

    Untitled

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


    Original     		PDF 11-Mar-11

    AN609

    Abstract: IRF510 IRF510R
    Text: IRF510_RC, SiHF510_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF510 SiHF510 AN609, 25-Feb-10 AN609 IRF510R

    DIODE 0536

    Abstract: HEXFRED DIODE GB05XP120KTPBF NC301
    Text: GB05XP120KTPbF Vishay High Power Products Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses


    Original     		PDF GB05XP120KTPbF E78996 2002/95/EC 18-Jul-08 DIODE 0536 HEXFRED DIODE GB05XP120KTPBF NC301

    SEM32G

    Abstract: sandisk eMMC 4.41 emmc 4.41 spec JESD84-A441 eMMC 4.41 SEM04G emmc pcb layout SEM08G 153 ball eMMC memory sandisk 32GB Nand flash
    Text: e.MMC 4.41 I/F Preliminary Data Sheet 80-36-03433 February 2010 SanDisk Corporation Corporate Headquarters • 601 McCarthy Boulevard • Milpitas, CA 95035 Phone 408 801-1000 • Fax (408) 801-8657 www.sandisk.com 80-36-03433 SanDisk iNAND e.MMC 4.41 I/F - Data Sheet


    Original     		PDF 25-Feb-10 SEM32G sandisk eMMC 4.41 emmc 4.41 spec JESD84-A441 eMMC 4.41 SEM04G emmc pcb layout SEM08G 153 ball eMMC memory sandisk 32GB Nand flash

    NC-AA

    Abstract: NCEE10
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


    Original     		PDF 18-Jul-08 NC-AA NCEE10

    AN609

    Abstract: IRF520S SiHF520S
    Text: IRF520S_RC, SiHF520S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF520S SiHF520S AN609, 25-Feb-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: 4 2 THIS DRAWING 15 UNPUBLISHEDCOPYRIGHT J RELEASED ROR PUBLICATION BY TYCO ELECTRONICS CORPORATION. D IS T LOC ALL INTERNATIONAL RIGHTS RESERVED. R E V IS IO N S LTR C2 DESCRIPTION REVISED EC R — 1 0 —0 0 4 0 3 6 DATE DWN APVD 25FEB10 TS KB D D -1 8 + 0 . 5 5.4 + 0 . 512.1+0.2-


    OCR Scan     		PDF 25FEB10 14MAR07

    Untitled

    Abstract: No abstract text available
    Text: 4 2 THIS DRAWING 15 UNPUBLISHEDCOPYRIGHT RELEASED ROR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL INTERNATIONAL RIGHTS RESERVED. DIST J R E V IS IO N S LTR C1 DESCRIPTION REVISED EC R — 10 —0 0 4 0 3 6 DATE DWN APVD 25FEB10 TS KB D D 36.5 + 0 . 5 -


    OCR Scan     		PDF 25FEB10 20JAN05 2QJAN05

    ASTM B 545

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL C O P Y R IG H T BY ^ 0 0 E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L REVISIO N S RIGHTS R E S E R VE D . G C O R P O R A T IO N . o: LTR A1 D E S C R IP T IO N REV PER


    OCR Scan     		PDF 25FEB10 B-152 B-545 ASTM B 545