Untitled
Abstract: No abstract text available
Text: DG3157A, DG3157B Vishay Siliconix Low Voltage, 300-MHz - 3 dB Bandwidth, SPDT Analog Switch with Power Down Protection 2:1 Multiplexer/Demultiplexer Bus Switch DESCRIPTION FEATURES The DG3157A, DG3157B are high-speed single-pole double-throw, low voltage switch. Using sub-micro CMOS
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DG3157A,
DG3157B
300-MHz
DG3157B
2011/65/EU
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SIA456DJ
Abstract: No abstract text available
Text: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA456DJ
SC-70
SC-70-6L-Single
SiA456DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: HFA30TA60CS Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA30TA60CS
HFA30TA60CS
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SUU50P04-23 Vishay Siliconix P-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.023 at VGS = 10 V - 20 0.030 at VGS = 4.5 V - 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS 20.6 nC COMPLIANT
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SUU50P04-23
O-251
SUU50P04-23-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: HFA25TB60S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • • • • • • Base cathode 2 BENEFITS • • • • • 3 Anode 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions
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HFA25TB60S
HFA25TB60S
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 30 nC COMPLIANT
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SUD50N04-10P
O-252
SUD50N04-10P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUU50N04-25P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.020 at VGS = 10 V 20 0.025 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 11.4 nC COMPLIANT
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SUU50N04-25P
O-251
SUU50N04-25P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si7164
Abstract: Si7164DP
Text: SPICE Device Model Si7164DP Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7164DP
18-Jul-08
si7164
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Untitled
Abstract: No abstract text available
Text: SUD50N04-06P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 20 0.008 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 53.6 nC COMPLIANT
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SUD50N04-06P
O-252
SUD50N04-06P-E3
25electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: MKP 338 1 X1 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type FEATURES l l w h 15 to 27.5 mm lead pitch and 15 mm bent back to 7.5 mm. Supplied loose in box, taped on ammopack or reel w h h' F' lt P Ø dt RoHS-compliant product
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com/docs/28153/anaccaps
55/105/56/B
18-Jul-08
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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Untitled
Abstract: No abstract text available
Text: New Product UH10JT & UHF10JT Vishay General Semiconductor High Voltage Ultrafast Rectifier FEATURES TO-220AC ITO-220AC • Oxide planar chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability
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UH10JT
UHF10JT
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
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sprague 81d
Abstract: capacitor 81d sprague 81D103M035MB2D capacitor snap in 450V 105 sprague capacitor 82D 81da 81D103M025KB2D 81D153M016JC2D 81D333M016MC2D 81D472M025JA2D
Text: 81D Vishay Sprague Aluminum Capacitors + 105 °C, Snap-In FEATURES • Operating temperature to + 105 °C Pb-free • High ripple current capability Available • Low ESR Fig.1 Component Outlines QUICK REFERENCE DATA DESCRIPTION RIPPLE CURRENT MULTIPLIERS
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18-Jul-08
sprague 81d
capacitor 81d sprague
81D103M035MB2D
capacitor snap in 450V 105
sprague capacitor 82D
81da
81D103M025KB2D
81D153M016JC2D
81D333M016MC2D
81D472M025JA2D
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74443
Abstract: No abstract text available
Text: SUD50N04-06P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 20 0.008 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 53.6 nC COMPLIANT
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SUD50N04-06P
O-252
SUD50N04-06P-E3
18-Jul-08
74443
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SUD50N10-18P
Abstract: SUD50N10-18P-E3
Text: New Product SUD50N10-18P Vishay Siliconix N-Channel 100-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.0185 at VGS = 10 V 50 48 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT
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SUD50N10-18P
SUD50N10-18P-E3
20lectual
18-Jul-08
SUD50N10-18P
SUD50N10-18P-E3
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DO-220AA
Abstract: JESD22-B102 J-STD-002 ss3p4
Text: New Product SS3P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency
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J-STD-020,
2002/95/EC
2002/96/EC
DO-220AA
18-Jul-08
DO-220AA
JESD22-B102
J-STD-002
ss3p4
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LM3661TL-1.40
Abstract: No abstract text available
Text: EYZ Vishay Roederstein Aluminum Capacitors Power Printed Wiring Style FEATURES N • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Large types, minimized dimensions, cylindrical aluminum case, insulated with a blue sleeve • Provided with keyed polarity
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18-Jul-08
LM3661TL-1.40
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SUD10P06-280L
Abstract: SUD10P06-280L-E3
Text: SUD10P06-280L Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.170 at VGS = - 10 V - 10 0.280 at VGS = - 4.5 V -8 • TrenchFET Power MOSFETs • 175 °C Rated Maximum Junction Temperature
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SUD10P06-280L
O-252
SUD10P06-280L-E3
11-Mar-11
SUD10P06-280L
SUD10P06-280L-E3
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Untitled
Abstract: No abstract text available
Text: SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 30 nC COMPLIANT
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SUD50N04-10P
O-252
SUD50N04-10P-E3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SUU50N04-25P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.020 at VGS = 10 V 20 0.025 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 11.4 nC COMPLIANT
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SUU50N04-25P
O-251
SUU50N04-25P-E3
11-Mar-11
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A 1469 mosfet
Abstract: 68595
Text: SPICE Device Model Si5475DDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si5475DDC
S-81932-Rev.
25-Aug-08
A 1469 mosfet
68595
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Si7164DP
Abstract: No abstract text available
Text: SPICE Device Model Si7164DP Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7164DP
S-81929-Rev.
25-Aug-08
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SiA456DJ
Abstract: SIA456DJ-T1-GE3
Text: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA456DJ
SC-70
SC-70-6L-Single
SiA456DJ-T1-GE3
18-Jul-08
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UI02
Abstract: ic SE 135 R36A1 R35B AR43W MEMD9
Text: I 1 REUISION HISTORY ECO REU D E S C R IP T IO N IN IT IA L R E L E A S E C 3 2 .3 5 CHG, SIG NAME CORR D A TE 25AUG08 fiPPRO UED E .T R E L E U IC Z P IC _ D B [ 0 .7 ] SPA RE2 S P f lR E l D flT fl_R D Ÿ /O U E R F LO U P IC _ D B _ C L K C N T L _O flT fl#
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25AUG08
DC718C2
0C718C
UI02
ic SE 135
R36A1
R35B
AR43W
MEMD9
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