1000PPM
Abstract: No abstract text available
Text: SPECIFICATION FOR COTCO LED LAMP MODEL No : DOC. No : LC374TWN1-35G-A 04 18Nov04 Description: 35 Degree 3mm Round LED Lamp in White Color with Water Transparent Lens and Stopper Dice Material: InGaN Confirmed by Customer: Date: ATTENTION OBSERVE PRECAUTIONS
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LC374TWN1-35G-A
18Nov04
25Aug04
21Sep04
ECN-H20040310
4200mcd.
21Sep04.
1000PPM
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Untitled
Abstract: No abstract text available
Text: TSDF1205F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a
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TSDF1205F
OT-490
OT490
D-74025
25-Aug-04
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Untitled
Abstract: No abstract text available
Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-Circuit Emulation
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32-bit
16-bit
8/16-bit
1354E
25-Aug-04
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TRANSISTOR npn w2f
Abstract: W2F marking w2f transistor w2f 91 transistor TRANSISTOR NPN, w2f TRANSISTOR w2f w2f 04 transistor marking w2F TDSF1220W transistor W2F 15
Text: TSDF1220 / 1220R / 1220W / 1220RW VISHAY Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • Low power applications • Very low noise figure • High transition frequency fT = 12 GHz Applications 3 4 1 2 4 For low noise applications such as preamplifiers, mixers and oscillators in analog and digital TV-systems
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TSDF1220
1220R
1220RW
OT-143
OT-143R
OT-343
OT-143
TSDF1220R
OT-143R
TRANSISTOR npn w2f
W2F marking
w2f transistor
w2f 91 transistor
TRANSISTOR NPN, w2f
TRANSISTOR w2f
w2f 04 transistor
marking w2F
TDSF1220W
transistor W2F 15
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Untitled
Abstract: No abstract text available
Text: TSDF1205 / 1205R / 1205W / 1205RW VISHAY Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • Low power applications • Very low noise figure • High transition frequency fT = 12 GHz Applications 3 4 1 2 4 For low noise and small signal low power amplifiers.
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TSDF1205
1205R
1205RW
OT-143
OT-143R
OT-343
OT-343R
OT-143
TSDF1205R
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70.2 marking smd npn Transistor
Abstract: SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23
Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case
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BFS17
BFS17R
BFS17W
OT-23
OT-23
BFS17W
70.2 marking smd npn Transistor
SMD IC marking 632
702 TRANSISTOR smd SOT23
smd transistor marking j5
70.2 TRANSISTOR smd
smd transistor 718
transistor marking 702 application
sot-23 MARKING 636
transistor smd 661 752
704 TRANSISTOR smd SOT23
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SMD MARKING CODE v3p
Abstract: TSL201 video scaler RGB24 AN96054 AN98037 Philips SAA7146 Video Capture Device UDA1334 DAC marking ET2R
Text: INTEGRATED CIRCUITS DATA SHEET SAA7146A Multimedia bridge, high performance Scaler and PCI circuit SPCI Product specification Supersedes data of 1998 Apr 09 2004 Aug 25 Philips Semiconductors Product specification Multimedia bridge, high performance Scaler and PCI circuit (SPCI)
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SAA7146A
SMD MARKING CODE v3p
TSL201
video scaler RGB24
AN96054
AN98037
Philips SAA7146 Video Capture Device
UDA1334 DAC
marking ET2R
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BFR93AF
Abstract: No abstract text available
Text: BFR93AF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous
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BFR93AF
OT-490
OT-490
D-74025
25-Aug-04
BFR93AF
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TSDF1220F
Abstract: No abstract text available
Text: TSDF1220F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a
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TSDF1220F
OT-490
D-74025
25-Aug-04
TSDF1220F
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ptc 96209
Abstract: PTC 96726 PTC 96626 96209 96702 96209 ptc ptc thermistor catalog PTC 96706 96648 96616
Text: 2322 662 96. Dual Vishay BCcomponents Dual PTC Thermistors For Degaussing FEATURES a. Dual PTC degaussing. • Residual currents as low as 2 mA • Long decay time > 110 ms • Stable performance over a long time > 40,000 operations • Self-extinguishing white plastic case (“UL 94.V.0” )
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MBB633
E69578
Sn60Pb40
CCB298
25-Aug-04
ptc 96209
PTC 96726
PTC 96626
96209
96702
96209 ptc
ptc thermistor catalog
PTC 96706
96648
96616
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bfr96ts
Abstract: No abstract text available
Text: BFR96TS VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039
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BFR96TS
BFR96TS
D-74025
25-Aug-04
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sot-23 MARKING 636
Abstract: ZS 1052 AC ZS 633 BFR93a
Text: BFR93A / BFR93AR / BFR93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • High transition frequency • Low noise figure 2 3 1 SOT-23 Applications Wide band amplifier up to GHz range. 3 Mechanical Data
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BFR93A
BFR93AR
BFR93AW
OT-23
OT-23
BFR93AW
sot-23 MARKING 636
ZS 1052 AC
ZS 633
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CPF2
Abstract: CPF1 DALE dale cpf2 10R000 cpf312
Text: CPF Vishay Dale Metal Film Resistors, Industrial, Power, Flameproof FEATURES • High power rating, small size • Flameproof, high temperature coating • Special filming and coating processes • Excellent high frequency characteristics • Low noise • Low voltage coefficient
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15purity
-STD-1276,
25-Aug-04
CPF2
CPF1 DALE
dale cpf2
10R000
cpf312
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SOT-490
Abstract: TSDF1250F
Text: TSDF1250F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a
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TSDF1250F
OT-490
OT490
D-74025
25-Aug-04
SOT-490
TSDF1250F
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TSDF2005W
Abstract: No abstract text available
Text: TSDF2005W VISHAY Vishay Semiconductors 25 GHz Silicon NPN Planar RF Transistor Features • • • • • 1 Very low noise figure Very high power gain High transition frequency fT = 25 GHz Low feedback capacitance Emitter pins are thermal leads 4 2 3 16712
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TSDF2005W
OT-343R
D-74025
25-Aug-04
TSDF2005W
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Untitled
Abstract: No abstract text available
Text: TSDF1250 / 1250R / 1250W / 1250RW VISHAY Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • • • • Low power applications Very low noise figure High transition frequency fT = 12 GHz Excellent large signal behaviour
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TSDF1250
1250R
1250RW
OT-143
OT-143R
OT-343
OT-343R
OT-143
TSDF1250R
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E69578
Abstract: 29014 PTC THERMISTOR FOR DEGAUSSING 2322 PTC THERMISTOR FOR DEGAUSSING
Text: 2322 662 96. Double Mono Vishay BCcomponents Double Mono PTC Thermistors For Degaussing FEATURES • Residual currents as low as 25 mA a. Double mono PTC degaussing. • Long decay time > 250 ms • Stable performance over a long time >40,000 operations
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MBB633
E69578
Sn60Pb40
CCB298
25-Aug-04
29014
PTC THERMISTOR FOR DEGAUSSING 2322
PTC THERMISTOR FOR DEGAUSSING
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BAR63V-02V
Abstract: BAR63V-02V-GS08 BAR63V-02V-GS18
Text: BAR63V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-02V
OD-523
BAR63V-02V
OD-523
D-74025
25-Aug-04
BAR63V-02V-GS08
BAR63V-02V-GS18
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SMD IC 3029
Abstract: No abstract text available
Text: TCMT1103-3029 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package Features • • • • • • • • Low profile package half pitch AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF
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TCMT1103-3029
2002/95/EC
2002/96/EC
UL1577,
E76222
08-Apr-05
SMD IC 3029
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Tyco faston 250 series
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISH ED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 86 LTR L D ESCRIPTION REDRAW N DATE DWN APVD 25AUG04 JR TM D 1 \ A S T E R IS K * FDR PHDS BRONZE V E R S IO N ONLY.
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25AUG04
25AUG2004
25AUG04
31MAR2000
Tyco faston 250 series
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC G ALL RIGHTS RESERVED. R E V IS IO N S 14 LTR DESCRIPTION DWN DATE REV PER 0G 3A—0 6 6 8 —0 4 APVD JR TM 25AUG04 D Z ^D ^D I^ U WIRE RANGE v i^ F IL E
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25AUG04
E13288
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E13288
Abstract: LR7189
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC ALL RIGHTS RESERVED. G R E V IS IO N S 14 LTR AB DESCRIPTION REV PER 0G3A—0674—04 DATE DWN APVD 25AUG04 JR TM D D Z ^ D ^ D I^ WIRE RANGE U
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25AUG04
E13288
LR7189
1-800-T
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC DIST AF 50 R E V IS IO N S LTR DESCRIPTION c DATE REV PER 0G3A - 0 6 7 7 - 0 4 DWN APVD JR PD 25AUG04 D 1 C O N T IN U O U S 2 WIRE
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25AUG04
31MAR2000
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Untitled
Abstract: No abstract text available
Text: T H IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATIO N ALL COPYRIGHT RIGHTS - .- LOC RESERVED. CONTACT BY TYCO ELECTRONICS CORPORATION. D IS T REVISIONS H D IM E N S IO N S LTR DE SC R IPTIO N DATE EHC0—0 3 1 9 —0 4 CONNECTOR EXEMPLARY C O N TA C T
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03AUG04
MAR200
5222ARâ
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