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    25752A Price and Stock

    SMC Corporation of America XT13-257-5-2A

    REPAIR KIT, XT13 SERIES | SMC Corporation XT13-257-5-2A
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    RS XT13-257-5-2A Bulk 5 Weeks 1
    • 1 $7.7
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    RS Pro 2325752 (ALTERNATE: 2325752)

    White Silicone Rubber O-Ring Cord 4mm Diameter x 5m Length 60 Shore A | RS PRO 2325752
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    RS 2325752 (ALTERNATE: 2325752) Bulk 12 Weeks 1
    • 1 $45.03
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    TE Connectivity 382575-2 (ALTERNATE: 382575-2)

    Mini-Shunt Female Straight Black Shunt 2 Way 1 Row 2mm Pitch | TE Connectivity 382575-2
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    RS 382575-2 (ALTERNATE: 382575-2) Bulk 80,000
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    25752A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    am29f010

    Abstract: No abstract text available
    Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands


    OCR Scan     		PDF Am29F010 32-pin Am29F040 02S7S2A

    Untitled

    Abstract: No abstract text available
    Text: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time


    OCR Scan     		PDF 32-Pin 28F512A 2S752Ã 0032fc

    29F080

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y Am29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ — Minimizes system level power requirements


    OCR Scan     		PDF Am29F080 44-pin 02S752Ã a0337bl 29F080

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 9 F0 1 6 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards


    OCR Scan     		PDF 48-pin Am29F016

    EE-21

    Abstract: 28F010P
    Text: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current


    OCR Scan     		PDF Am28F010 32-Pin D55752fl D3273D EE-21 28F010P

    Am29F010

    Abstract: G033573
    Text: FINAL a A m 2 9 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards


    OCR Scan     		PDF 32-pin Am29F010 G033573

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMD* Am29LV400T/Am29LV400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 2.7 to 3.6 volt, extended voltage range for read and write operations — Minimizes system-level power requirements


    OCR Scan     		PDF Am29LV400T/Am29LV400B 8-Bit/262 16-Bit) 48-pin 44-Pin 16-038-S044-2 25752A

    Untitled

    Abstract: No abstract text available
    Text: FIN A L Am29F200T/Am29F200B AtlvaM n“ o 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


    OCR Scan     		PDF Am29F200T/Am29F200B 8-Bit/131 16-Bit) 44-pin 48-pin 29F200 29F200T/Am29F200B 25752fl 0Q33bb4

    Untitled

    Abstract: No abstract text available
    Text: a Am28F512 Advanced Micro Devices 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ ■ — No data retention power consumption


    OCR Scan     		PDF Am28F512 32-Pin

    OA79

    Abstract: AMD am2 socket pinout amd AM2 pinout amd socket 940 pinout AMD socket AM2 pinout BXA 4250 5607 AM27C040 h4t diode smd pinout AM2 AMD
    Text: FINAL il Am27C040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns — Typical programming time of 1 minute ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to


    OCR Scan     		PDF Am27C040 28-pin 32-pin Am27C040ign 8M-7/94-0 14971D 0257S2Ã 32S73 OA79 AMD am2 socket pinout amd AM2 pinout amd socket 940 pinout AMD socket AM2 pinout BXA 4250 5607 h4t diode smd pinout AM2 AMD

    3251b

    Abstract: Am29F040 29F040 3251L AM29F040-75JC AM29F040A
    Text: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — Minimizes system level power requirements ■ Com patible w ith JEDEC-standard com mands


    OCR Scan     		PDF Am29F040 32-pin 3251b 29F040 3251L AM29F040-75JC AM29F040A

    DG33 transistor

    Abstract: No abstract text available
    Text: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time


    OCR Scan     		PDF 32-Pin Am28F512A DG33 transistor

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 27C 1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Fiashrite programming ■ Fast access time — Typical programming time of 8 seconds — 70 ns ■ Latch-up protected to 100 mA from -1 V to ■ Low power consumption


    OCR Scan     		PDF 16-Bit) 40-Pin 44-Pin Am27C1024 KS000010

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY a A m 2 9 F 1 0 0 T /A m 2 9 F 1 OOB 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ±1 0 % write and erase, read — Minimizes system level power requirements


    OCR Scan     		PDF 8-Bit/65 16-Bit) 44-pin 48-pin CP-10 3M-8/94-0

    OA95

    Abstract: mee7
    Text: a Advanced Micro Devices A m 28F 01 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access tim e ■ CMOS low power consum ption ■ — 30 mA maximum active current


    OCR Scan     		PDF Am28F01 32-Pin Am28F010A 3402b OA95 mee7