IS61SP25636
Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B
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32Kx8
32Kx16
128Kx8
64Kx16
128Kx16
IS61C64B
IS61C256AH
IS61C3216
IS61C3216B
IS61SP25636
s62lv256
256x16 sram
89C64
IS41LV16105
soj44
non-volatile SRAM 4KX8
issi 32kx16
IS80C31
64KX64
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IC1210-m128LQ
Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are
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KM616V1002B
Abstract: No abstract text available
Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History
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KM616V1002B/BL,
KM616V1002BI/BLI
64Kx16
8/10/12ns
44-TSOP2-400F
KM616V1002B
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KM616V1002B
Abstract: No abstract text available
Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History
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KM616V1002B/BL,
KM616V1002BI/BLI
64Kx16
8/10/12ns
44-TSOP2-400F
KM616V1002B
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44-TSOP2-400BF
Abstract: No abstract text available
Text: PRELIMINARY K6R1016V1B-C/B-L, K6R1016V1B-I/B-P Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History
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K6R1016V1B-C/B-L,
K6R1016V1B-I/B-P
64Kx16
8/10/12ns
44-TSOP2-400BF
002MIN
44-TSOP2-400BF
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GLT41116-40J4
Abstract: GLT41116-35J4 64K x 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE GLT4 GLT41116 GLT41116-30J4 GLT41116-30TC GLT41116-35TC GLT41116-40TC GLT41116-45J4
Text: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Feb 2004 Rev 2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and
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GLT41116
GLT41116
256-cycle
256x16
400mil
GLT41116-40J4
GLT41116-35J4
64K x 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
GLT4
GLT41116-30J4
GLT41116-30TC
GLT41116-35TC
GLT41116-40TC
GLT41116-45J4
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GLT41116-35J4
Abstract: GLT710008
Text: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE May 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and
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GLT41116
GLT41116
256-cycle
256x16
400mil
2701Northwestern
GLT41116-35J4
GLT710008
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GLT41316-40J4
Abstract: No abstract text available
Text: G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and
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GLT41316
GLT41316
256-cycle
256x16
400mil
2701Northwestern
GLT41316-40J4
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KM6161002B
Abstract: No abstract text available
Text: CMOS SRAM KM6161002B, KM6161002BI Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.
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KM6161002B,
KM6161002BI
64Kx16
44-TSOP2-400F
KM6161002B
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256x16* STATIC RAM
Abstract: KM6164002j KM6164002 KM6164002E KM6164002I SRAM sheet samsung
Text: PRELIMINARY CMOS SRAM KM6164002, KM6164002E, KM6164002I PACKAGE DIMENSIONS 44-SOJ-400 Units : Inches millimeters #23 9.40±0.25 0.370±0.010 10.16 0.400 #44 11.18±0.12 0.440±0.005 0.20 +0.10 -0.05 0.008 +0.004 -0.002 #22 #1 28.98 MAX 1.141 25.58±0.12
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KM6164002,
KM6164002E,
KM6164002I
44-SOJ-400
148MAX
KM6164002E
256x16* STATIC RAM
KM6164002j
KM6164002
KM6164002I
SRAM sheet samsung
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KM6161002B
Abstract: No abstract text available
Text: CMOS SRAM KM6161002B, KM6161002BI Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.
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KM6161002B,
KM6161002BI
64Kx16
44-TSOP2-400F
KM6161002B
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM K6R1016C1B-C, K6R1016C1B-I Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.
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K6R1016C1B-C,
K6R1016C1B-I
64Kx16
44-TSOP2-400BF
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K6R4016C1A-I15
Abstract: 44-TSOP
Text: PRELIMINARY K6R4016C1A-C, K6R4016C1A-E, K6R4016C1A-I CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0
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K6R4016C1A-C,
K6R4016C1A-E,
K6R4016C1A-I
256Kx16
44-TSOP2-400BF
002MIN
K6R4016C1A-I15
44-TSOP
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KM6164002A
Abstract: No abstract text available
Text: PRELIMINARY KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0
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KM6164002A,
KM6164002AE,
KM6164002AI
256Kx16
44-TSOP2-400F
KM6164002A
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is25c64B
Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are
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IS23SC55160
Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are
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tms 5110
Abstract: SDQ11 L1039
Text: J2L0024-17-Y1 作成：1998年 1月 MSM54V16272 l 前回作成：1997年 9月 ¡ 電子デバイス MSM54V16272 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー
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J2L002417Y1
MSM54V16272
144Word
16Bit
MSM54V16272
MSM54V16272262
16RAM
16SAMCMOS
RAM256K
SAM512
tms 5110
SDQ11
L1039
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SDQ14
Abstract: No abstract text available
Text: J2L0026-17-Y1 作成：1998年 1月 MSM54V16282 l 前回作成：1997年 9月 ¡ 電子デバイス MSM54V16282 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー
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J2L002617Y1
MSM54V16282
144Word
16Bit
MSM54V16282
MSM54V16282262
16RAM
16SAMCMOS
RAM256K
SAM512
SDQ14
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ax81
Abstract: MSM54V16282 SDQ11
Text: FJDS54V16282-05 作成：2000年 2月 ¡ 電子デバイス 前回作成：1998年 1月 MSM54V16282 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー
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FJDS54V16282-05
MSM54V16282
144-Word
16-Bit
MSM54V16282262
16RAM
16SAMCMOS
RAM256K
SAM512
5128ms
ax81
MSM54V16282
SDQ11
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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Untitled
Abstract: No abstract text available
Text: M O SEL VITELIC V53C311616500 3.3 VOLT 1 M X 16 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, Irac 50 ns 60 ns 70 ns Max. Column Address Access Time, (^ aa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, fcc)
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V53C311616500
16-bit
cycles/64
42-pin
50/44-pin
V53C311616500
G0G4151
00QM1S2
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Untitled
Abstract: No abstract text available
Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM{3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max.) • Low Power Dissipation Standby (T T l) : 30mA(Max ) (CMOS) : 50mA(Max.) 0.5mA(Max.) - L-Ver. only
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KM616V1002B/BL,
KM616V1002BI/BLI
KM616V1002B/BL
200mA
195mA
190mA
KM616V1002BJ
44-SOJ-4GO
KM616V1002BT
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Untitled
Abstract: No abstract text available
Text: IB M 0 1 1 6 1 6 0 IB M 0 1 1 6 1 6 0 B IB M 0 1 1 6 1 6 0 M IB M 0 1 1 6 1 6 0 P 1 M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles
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200nA
350jis
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ae5t
Abstract: j4213
Text: KM6161002B, KM6161002BI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6161002B- 8 : 200mA(Max.) KM6161002B -1 0 : 195mA(Max.)
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KM6161002B,
KM6161002BI
KM6161002B-
200mA
KM6161002B
195mA
KM6161002BJ
44-SOJ-400
KM6161002BT
ae5t
j4213
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