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    256MDRAM Search Results

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    Catalog Datasheet MFG & Type PDF Document Tags

    PC100-322-620

    Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125


    Original     		PDF 39S256400/800/160AT 256-MBit SPT03933 PC100-322-620 PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15

    39S256160T

    Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
    Text: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S256400/800/160T 256MBit P-TSOPII-54 400mil PC100 3-2T10 HYB39S256400/800/160AT 39S256160T PC100-322-620 smd CAY PC100-322

    39S256160DT-7

    Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
    Text: HYB39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166


    Original     		PDF HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil P-TSOPII-54 GPX09039 TFBGA-54 39S256160DT-7 HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOP-54-2

    PC100-322-620

    Abstract: 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03933 PC100-322-620 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620

    PC133 registered reference design

    Abstract: No abstract text available
    Text: HYB39S256400/800/160DT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Datasheet (Rev. 7/01) • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns


    Original     		PDF HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil PC166 PC133 PC133 registered reference design

    PC100-222-620

    Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8


    Original     		PDF 39S256400/800/160AT 256-MBit SPT03933 PC100-222-620 PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3

    P-TSOPII-54

    Abstract: PC133 registered reference design
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 Units fCK 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns tCK2 10 10 ns tAC2 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 PC133 registered reference design

    PC100-322-620

    Abstract: Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider P-TSOPII-54 PC133 registered reference design
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03910 SPT03923 PC100-322-620 Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider PC133 registered reference design

    PC100-322-620

    Abstract: P-TSOPII-54 PC133 registered reference design
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 PC100-322-620 PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Information • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125


    Original     		PDF 39S256400/800/160AT 256-MBit P-TSOPII-54 400mil PC133 PC100 SPT03933

    MARKING CAW

    Abstract: P-TSOPII-54
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03933 MARKING CAW

    39S256160T

    Abstract: P-TSOPII-54
    Text: HYB39S25640x/80x/16xT 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Target Information Rev. 0.5 High Performance: -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tAC2 6 8 ns • Multiple Burst Read with Single Write Operation • Automatic Command


    Original     		PDF HYB39S25640x/80x/16xT 256MBit P-TSOPII-54 400mil, TSOPII-54 TSOP54-2 39S256160T P-TSOPII-54

    39S256160T

    Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
    Text: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled


    OCR Scan     		PDF YB39S25640x/80x/16xT 256MBit P-TSOPII-54 400mil P-TSOPII-54 400mil, TSOPII-54 TSOP54-2 39S256160T APA10 39S256160T-8 39S256400T-8

    Untitled

    Abstract: No abstract text available
    Text: # H YB39S256400/800/160T 256MBit Synchronous DRAM In fin eon 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8A -8B Units fC K 125 125 100 M Hz tC K 3 8 8 10 ns tA C 3 6 6 6 ns tC K 2 10 12 15 ns tA C 2


    OCR Scan     		PDF YB39S256400/800/160T 256MBit