IBM0418A41NLAB
Abstract: IBM0418A81NLAB IBM0436A41NLAB IBM0436A81NLAB
Text: IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM . Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • Registered outputs • 30 Ω drivers
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IBM0436A41NLAB
IBM0418A41NLAB
IBM0418A81NLAB
IBM0436A81NLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crrL3325
IBM0418A41NLAB
IBM0436A81NLAB
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K7A401800B-QC
Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters
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K7A403609B
K7A403209B
K7A401809B
128Kx36/x32
256Kx18
128Kx36
128Kx32
256Kx18-Bit
570mA
490mA
K7A401800B-QC
K7A401809B
K7A401809B-QC
K7A403200B-QC
K7A403209B
K7A403209B-QC
K7A403609B
K7B401825B-QC
K7B403225B-QC
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K6X4016C3F
Abstract: K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q
Text: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.
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K6X4016C3F
256Kx16
44-TSOP2-400R
K6X4016C3F-B
K6X4016C3F-F
K6X4016C3F-Q
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K7A401800B
Abstract: K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC
Text: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters
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K7A403600B
K7A403200B
K7A401800B
128Kx36/x32
256Kx18
128Kx36
128Kx32
256Kx18-Bit
350mA
290mA
K7A401800B
K7A401800B-QC
K7A401809B-QC
K7A403200B
K7A403200B-QC
K7A403209B-QC
K7A403600B
K7B401825B-QC
K7B403225B-QC
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IBM0418A8ACLAB
Abstract: IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB
Text: . IBM0418A4ACLAB IBM0436A8ACLAB Preliminary IBM0418A8ACLAB IBM0436A4ACLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology
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IBM0418A4ACLAB
IBM0436A8ACLAB
IBM0418A8ACLAB
IBM0436A4ACLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crlh3320
IBM0418A8ACLAB
IBM0436A4ACLAB
IBM0436A8ACLAB
IBM0418A4ACLAB
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K7N401801B
Abstract: K7N403601B
Text: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,
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K7N403601B
K7N401801B
128Kx36
256Kx18
256Kx18-Bit
350mA
290mA
330mA
270mA
K7N401801B
K7N403601B
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CY7C197
Abstract: No abstract text available
Text: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable
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CY7C197
256Kx1
CY7C197
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K6F4016U6G-EF70
Abstract: K6F4016U6G K6F4016U6G-F K6F4016U6GE
Text: Preliminary CMOS SRAM K6F4016U6G Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark June 11, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F4016U6G
256Kx16
55/Typ.
35/Typ.
K6F4016U6G-EF70
K6F4016U6G-F
K6F4016U6GE
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IBM0418A4ANLAB
Abstract: IBM0418A8ANLAB IBM0436A4ANLAB IBM0436A8ANLAB
Text: . Preliminary IBM0418A4ANLAB IBM0418A8ANLAB IBM0436A8ANLAB IBM0436A4ANLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25µ CMOS technology • Synchronous Register-Latch Mode of Operation
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IBM0418A4ANLAB
IBM0418A8ANLAB
IBM0436A8ANLAB
IBM0436A4ANLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crlL3325
IBM0418A8ANLAB
IBM0436A4ANLAB
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IBM0418A41XLAB
Abstract: IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB
Text: . Preliminary IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology
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IBM0418A81XLAB
IBM0436A81XLAB
IBM0418A41XLAB
IBM0436A41XLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crrh2516
IBM0418A41XLAB
IBM0418A81XLAB
IBM0436A41XLAB
IBM0436A81XLAB
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da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059-00
da53
HY5R128HC745
HY5R128HC840
HY5R128HC845
HY5R144HC653
HY5R144HC745
HY5R144HC840
HY5R144HC845
HY5R144HM745
HY5R144HM845
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Untitled
Abstract: No abstract text available
Text: EDI816256CA 256Kx16 MONOLITHIC SRAM, SMD 5962-96795 FEATURES 256Kx16 bit CMOS Static The EDI816256CA is a 4 megabit Monolithic CMOS Static RAM. Random Access Memory The EDI816256CA uses 16 common input and output lines and has an output enable pin which operates faster than address access
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EDI816256CA
256Kx16
EDI816256CA
MIL-STD-883
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HY514264
Abstract: No abstract text available
Text: •HYUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
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HY514264B
256Kx16,
16-bit
40-pin
400mil)
16-bits
256Kx16
HY514264
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256Kx4 SRAM
Abstract: EDI8M4257C
Text: mD\ EDI8M4257C Electronic Designs Inc. High Speed Megabit SRAM Module 256Kx4 SRAM CMOS, High Speed Module Features The EDI8M4257C is a Megabit 256Kx4-bit High Speed Static RAM Module with four bi-directional input/ output lines. The module is constructed of four 256Kx1
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EDI8M4257C
256Kx4
EDI8M4257C
256Kx4-bit)
256Kx1
181256C
256Kx4 SRAM
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Untitled
Abstract: No abstract text available
Text: I = =• = Preliminary IBM0418A80QLAB IBM0418A40QLAB IBM0436A80QLAB IBM0436A40QLAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 Organizations • Registered Addresses, W rite Enables, Synchro nous Select, and Data Ins.
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IBM0418A80QLAB
IBM0418A40QLAB
IBM0436A80QLAB
IBM0436A40QLAB
256Kx36
512x18)
128Kx36
256Kx18)
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KM6 II
Abstract: SRAM sheet samsung KM616
Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating
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256Kx16
256Kx16
44-TSOP
KM6164000A
KM6164000A
KM6 II
SRAM sheet samsung
KM616
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Scans-0012741
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0
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KM616V4002B/BL,
KM616V4002BI/BLI
256Kx16
KM616V4002BI/BLI
44-SOJ-400
44-TSO
P2-400F
Scans-0012741
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Untitled
Abstract: No abstract text available
Text: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n
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AS29F400
512KX8
256KX16
ip9F400T-1SOTC
AS29F400T-ISOU
AS29F400B-55SC
AS29F400B*
AS29F400B-70SI
AS29F400B-90SC
AS29F400B-90SI
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Untitled
Abstract: No abstract text available
Text: ^ EDI B«ctronic Designs Inc E D I8 F 1 7 6 2 5 6 C .1 45M Secondary Cache Memory Array Module 256KX176 Asynchronous Static RAM Module with TAG, TAG ECC, and DATA ECC Features The EDI8F176256C is a single array multichip Static RAMmoduleorganizedasa262,144x176bitmernory array.
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256KX176
EDI8F176256C
RAMmoduleorganizedasa262
144x176bitmernory
R4000
of80Qon
EDI8F176256C20MXC
EDI8F176256C25MXC
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Untitled
Abstract: No abstract text available
Text: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted
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EDI8F16256C
256Kx16
EDI8F16256C
4096K-bit
256Kx4
a256Kx16,
512Kx8
1024Kx4
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BQ4025
Abstract: bq4025Y
Text: h bq4025/bq4025Y BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The in te g ra l co n tro l c irc u itry an d
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bq4025/bq4025Y
256Kx16
bq4025
304-bit
40-pin
bq4025
bq4025Y
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BQ4025
Abstract: bq4025Y
Text: bq4025/bq4025Y BENCHMARQ 256KX16 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its . The integral control circuitry and lithium
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bq4025/bq4025Y
256KX16
bq4025
304-bit
D0037CH
bq4025Y
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Untitled
Abstract: No abstract text available
Text: TT WHITE M IC R O E LEC TR O N IC S 256Kx16 SRAM 3.3V W PS256K16V-XU X ADVANCED* PLASTIC PLUS FEATURES • Access Tim es of 15,17, 20ns PIN CONFIGURATION TOP VIEW AO c 1 A1 c 2 A2 c 3 A3 c 4 A4 c 5 ■ Standard Commercial Off-The-Shelf COTS M em ory Devices fo r Extended Tem perature Range
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PS256K16V-XU
256Kx16
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Untitled
Abstract: No abstract text available
Text: C3 WMS256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized 256Kx16
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WMS256K16-XXX
256KX16
MIL-STD-883
as256Kx16
l/Cte-16
Ao-17
256K16
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