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    256K16E0 Search Results

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    256K16E0 Price and Stock

    Alliance Memory Inc AS4C256K16E0-50JC

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    Bristol Electronics AS4C256K16E0-50JC 7 2
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    • 100 $3
    • 1000 $3
    • 10000 $3
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    Alliance Memory Inc AS4C256K16E050JC

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    Bristol Electronics AS4C256K16E050JC 1
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    ALLIANCE SEMICONDUCTOR CORP AS4C256K16E0-60JC

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    Bristol Electronics AS4C256K16E0-60JC 118
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    Alliance Memory Inc AS4C256K16E0-35TC

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    Bristol Electronics AS4C256K16E0-35TC 870 1
    • 1 $15
    • 10 $10.125
    • 100 $8.625
    • 1000 $8.625
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    ALLIANCE (Alliance Memory Inc) AS4LC256K16E0-60JC

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    Bristol Electronics AS4LC256K16E0-60JC 308 1
    • 1 $13.5
    • 10 $10.125
    • 100 $7.7625
    • 1000 $7.7625
    • 10000 $7.7625
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    256K16E0 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: $6/&.  9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 35/45/60 ns RAS access time - 17/20/25 ns column address access time - 7/10/10 ns CAS access time • Low power consumption - Active: 280 mW max (256K16E0-35)


    Original     		PDF AS4LC256K16E0-35) 40-pin 40/44-pin I/O15 AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E0-45JC

    AS4LC256K16EO

    Abstract: AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28
    Text: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time


    Original     		PDF AS4LC256K16EO AS4LC256K16EO-35) AS4LC256K16EO35) 40-pin 40/44-pin I/O15 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16EO AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28

    AS4LC256K16EO

    Abstract: No abstract text available
    Text: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh - 45/50/60 ns RAS access time


    Original     		PDF AS4LC256K16EO 40-pin AS4LC256K16EO-45) 40/44-pin I/O15 40-pin AS4LC256K16E0-45JC AS4LC256K16E0-50JC AS4LC256K16EO

    Untitled

    Abstract: No abstract text available
    Text: January 2001 Advance Information AS4VC256K16EO 2.5V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh


    Original     		PDF AS4VC256K16EO 40-pin 40/44-pin I/O15 AS4VC256K16E0-45JC AS4VC256K16EO-45TC AS4VC256K16EO-60JC

    AS4C256K16E0-50JC

    Abstract: No abstract text available
    Text: $6&.  9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (256K16E0-25)


    Original     		PDF AS4C256K16E0-25) 40-pin 40/44-pin I/O15 40/44-pin AS4C256K16E0-30JC AS4C256K16E0-35JC AS4C256K16E0-50JC

    AS4C256K16E0

    Abstract: AS4C256K16E0-35JC
    Text: 256K16E0 5V 256Kx16 CMOS DRAM EDO Features • Organization: 262,144 words × 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (256K16E0-25)


    Original     		PDF AS4C256K16E0 AS4C256K16E0-25) 40-pin 40/44-pin 200vailable AS4C256K16E0 AS4C256K16E0-35JC

    Untitled

    Abstract: No abstract text available
    Text: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time


    Original     		PDF AS4LC256K16EO AS4LC256K16EO-35) AS4LC256K16EO35) 40-pin 40/44-pin I/O15 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC

    Untitled

    Abstract: No abstract text available
    Text: 256K16E0 5V 256Kx16 CMOS DRAM EDO Features • Organization: 262,144 words × 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (256K16E0-25)


    Original     		PDF AS4C256K16E0 AS4C256K16E0-25) 40-pin 40/44-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ A S 4 L C 2 5 6 k l6 E 0 II 3.3V 2 5 6 k X 16 CMOS DRAM EDO Features • O rganization: 262,144 w ords x 16 bits • H igh speed - 3 5 /4 5 /6 0 ns RAS access tim e - 1 7 /2 0 /2 5 ns colum n address access tim e - 7 / 1 0 /1 0 ns CAS access tim e


    OCR Scan     		PDF AS4LC256K16E0-35) AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC AS4LC256K16E0-35TC AS4LC256K16E0-45TC AS4LC256K16E0-60TC 256K16E0

    as4c256k16eo

    Abstract: 256KX16 AS4C256K16E0 LO301
    Text: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed


    OCR Scan     		PDF AS4C256K16E0 256KX16 4C256K16E0-45) 40-pin I/015 I/014 as4c256k16eo LO301

    Untitled

    Abstract: No abstract text available
    Text: 256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e


    OCR Scan     		PDF AS4LC256K16E0 AS4LC256K16E0-35) 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC 40/44-pin AS4LC256K16E0-35TC

    YH 13001

    Abstract: SP 13001
    Text: Advance information •■ A S4V 256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h


    OCR Scan     		PDF C256K16E0 40-pin AS4VC256K16E0-45JC AS4VC256K16E0-60JC AS4VC256K16E0-45TC AS4VC256K16E0-60TC 256K16E0 YH 13001 SP 13001

    AS4C256K16E0-45JC

    Abstract: No abstract text available
    Text: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s x 16 b its • E x te n d e d d a ta o u t • H ig h s p e e d • 5 1 2 r e f r e s h c y c le s , 8 m s r e f r e s h in te r v a l


    OCR Scan     		PDF

    AS4C256K16E0-60JC

    Abstract: as4c256k16eo 12 SQ 045 JF 256KX16 AS4C256K16E0
    Text: H ig h P e r fo r m a n c e 256K X 16 CMOS DRAM gg A S4C 256K 16E 0 II H iah speed 2 5 6 K x l6 CMOS DRAM EDO Preliminary information Features • 5 1 2 r e f r e s h c y c le s, 8 m s r e f r e s h in te rv a l • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s X 16 b its


    OCR Scan     		PDF AS4C256K16E0 256KX16 256Kxl6 4C256K16E0-50) 40-pin 40/44-pin I/015 AS4C256K16E0-30JC AS4C256K16E0-35JC AS4C256K16E0-60JC as4c256k16eo 12 SQ 045 JF AS4C256K16E0

    6k16e

    Abstract: TEA II04 256KX16 AS4LC256K16E0 AS4LC256K16E0-35JC
    Text: Preliminary information •■ A 256K16E0 1 3.3V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l - R A S -only o r C A S-before-RA S re fre s h o r se lf re fre s h • R e a d -m o d ify -w rite


    OCR Scan     		PDF AS4LC256K16E0 256KX16 AS4LC256K16E0-35) 40-pin 40/44-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC 6k16e TEA II04 AS4LC256K16E0 AS4LC256K16E0-35JC

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ 256K16E0 II 3.3V 256KX16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns RAS access tim e - 1 7 / 2 0 /2 5 ns c o lu m n address access tim e - 7 / 1 0 / 1 0 ns CAS access tim e


    OCR Scan     		PDF AS4LC256K16E0 256KX16 AS4LC256K16E0-35) 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC AS4LC256K16E0-35TC AS4LC256K16E0-45TC

    PA 13001

    Abstract: 13001 switching 13001 equivalent c s x 13001 H 06 tsc 3001 256KX16 Rmw46 RS 13001 13001 s 60 HA 13001
    Text: Advance information •■ 256K16E0 1 2.5V 2 5 6 K X 16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 4 5 / 6 0 ns RAS access tim e - 2 0 / 2 5 ns c o lu m n address access tim e - 14 / 1 6 ns CAS access tim e


    OCR Scan     		PDF AS4VC256K16E0 256KX16 40-pin 40/44-pin AS4VC256K1Ã AS4VC256K16E0-45JC AS4VC256K16E0-60JC AS4VC256K16E0-45TC PA 13001 13001 switching 13001 equivalent c s x 13001 H 06 tsc 3001 Rmw46 RS 13001 13001 s 60 HA 13001