Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    256K X 8 SRAM DIP Search Results

    256K X 8 SRAM DIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27LS07PC Rochester Electronics LLC Standard SRAM, 16X4, 55ns, TTL, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    CY7C167A-35PC Rochester Electronics Standard SRAM, 16KX1, 35ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20 Visit Rochester Electronics Buy
    MM54C89J Rochester Electronics LLC Standard SRAM, 16X4, 910ns, CMOS, CDIP16, CERAMIC, DIP-16 Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy

    256K X 8 SRAM DIP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IDT71V256

    Abstract: IDT71V256SA P28-2 A 3101 8 pin
    Text: IDT71V256SA 3.3V CMOS STATIC RAM 256K 32K x 8-BIT  LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V256SA Integrated Device Technology, Inc. FEATURES • Ideal for high-performance processor secondary cache


    Original     		IDT71V256SA 15/20/25ns 28-pin IDT71V256 SO28-5) P28-2) PZ28-1) IDT71V256 IDT71V256SA P28-2 A 3101 8 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Commercial SRAM Products 256Kx8, 25 - 70ns, DIP 30A036-01 C 2 Megabit High Speed CMOS SRAM DPS256S8AP DESCRIPTION: The DPS256S8AP is a high speed 256K x 8 high-density, low-power static RAM module comprised of two high speed ceramic 128K x 8 monolithic SRAM’s, an advanced high-speed CMOS


    Original     		256Kx8, 30A036-01 DPS256S8AP DPS256S8AP 600-mil-wide, 32-pin 500mV PDF

    Untitled

    Abstract: No abstract text available
    Text: FORCE Technologies 2 Megabit CMOS SRAM FTS256S8P DESCRIPTION: The FTS256S8P is a Military 256K X 8 high-density, low-power static RAM module comprised of two 128K x 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface


    Original     		FTS256S8P 600-mil-wide, 32-pin FTS256S8P 500mV PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 Megabit CMOS SRAM DPS256S8P/DPS256S8PL/DPS256S8PLL DESCRIPTION: The DPS256S8P/PL/PLL is a 256K x 8 high-density, low-power static RAM module comprised of two 128K x 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface


    Original     		DPS256S8P/DPS256S8PL/DPS256S8PLL DPS256S8P/PL/PLL 600-mil-wide, 32-pin 500mV 30A036-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: FORCE Technologies 2 Megabit CMOS SRAM FTS256S8N DESCRIPTION: The FTS256S8N is a Military 256K X 8 high-density, low-power static RAM module comprised of two ceramic 128K X 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors


    Original     		FTS256S8N 600-mil-wide, 32-pin FTS256S8N PDF

    B628

    Abstract: No abstract text available
    Text: M628032 256K 32K x 8 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 32K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 12, 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ and DIP, 300 mil PACKAGES 28 28 1


    Original     		M628032 PSDIP28 SOJ28 M628032 AI00923 PSDIP28 SOJ28 B628 PDF

    QMI2419

    Abstract: CY7C197 CY7C199 precondition DIP JEDEC
    Text: Cypress Semiconductor Product Qualification Report QTP# 001605 VERSION 1.0 October, 2000 256K FAST ASYNCHRONOUS SRAM R42HDHA Technology, Fab 4 CY7C194/195 64K x 4 Static RAM CY7C197 256K x 1 Static RAM CY7C198/199 32K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


    Original     		R42HDHA CY7C194/195 CY7C197 CY7C198/199 CY7C199 7C1599G) R42HD 98------STRESS: CY7C109-VC QMI2419 CY7C197 CY7C199 precondition DIP JEDEC PDF

    FTS256S8N

    Abstract: 2 Megabit
    Text: FTS256S8N 2 Megabit CMOS SRAM DESCRIPTION: The FTS256S8N is a Military 256K X 8 high-density, low-power static RAM module comprised of two ceramic 128K X 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic substrate


    Original     		FTS256S8N 600-mil-wide, 32-pin FTS256S8N 500mV 2 Megabit PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 Megabit High Speed CMOS SRAM DPS256S8BN DESCRIPTION: The DPS256S8BN is a high speed military 256K x 8 high-density, static RAM module comprised of two high speed ceramic 128K x 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic


    Original     		DPS256S8BN DPS256S8BN 600-mil-wide, 32-pin 30A036-32 PDF

    WINBOND cross reference

    Abstract: winbond WINBOND SRAM cross reference CYPRESS SAMSUNG CROSS REFERENCE sram cross reference Winbond Electronics IDT7164 IDT CROSS 64K X 4 SRAM CY7C199
    Text: High-Speed SRAM Cross Reference Guide Density bits 64K Org. (bits) 8K*8 Package Type Company Winbond W2465A UTRON UT6164 ISSI IS61C64AH Cypress 256K 32K*8 CY7C185 Voltage 300-mil DIP X 5V X Speed (ns) SOJ SOP TSOP-I STSOP X 12 X X 10/12/15 X X 15/20/25 X


    Original     		W2465A IS61C64AH 300-mil UT6164 CY7C185 IDT7164 W24257A CY7C199 IDT71256SA UT61256 WINBOND cross reference winbond WINBOND SRAM cross reference CYPRESS SAMSUNG CROSS REFERENCE sram cross reference Winbond Electronics IDT7164 IDT CROSS 64K X 4 SRAM CY7C199 PDF

    AS5C2008

    Abstract: No abstract text available
    Text: AUSTIN SEMICONDUCTOR, INC. AS5C2008 883C 256K x 8 SRAM SRAM 256K x 8 SRAM O U TPU T ENABLE, E VO LU TIO N A R Y PINO UT AVAILABLE AS MILITARY SPECIFICATION • MIL STD-883 PIN ASSIGNMENT Top View 32-Pin DIP FEATURES High Speed: 20, 25, 35ns High-performance, low power, CMOS


    OCR Scan     		AS5C2008 STD-883 32-Pin DS000066 PDF

    Untitled

    Abstract: No abstract text available
    Text: □PM Dense-Pac Microsystems, Inc. DPS256S8P 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS256S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 128K X 8 monolithic SRAM 's, an advanced high-speed C M O S decoder and decoupling


    OCR Scan     		DPS256S8P DPS256S8P 600-mil-wide, 32-pin A0-A17 30A03 PDF

    C28A-E

    Abstract: No abstract text available
    Text: CYM1840 V CYPRESS 256K X 32 Static RAM Module F eatu res F u n ctio n a l D escrip tio n • High-density 8-megabil SRAM module The CYM1840 is a high-perform ance 8-megabit static RAM module organized as 256K words by 32 bits. This m odule is constructed from eight 256K x4 SRAM s in


    OCR Scan     		CYM1840 1840P 1840PD 840PD 60-Pin C28A-E PDF

    Untitled

    Abstract: No abstract text available
    Text: CYM1840 ' CYPRESS SEMICONDUCTOR 256K x 32 Static RAM Module Features Functional Description • High-density 8 -megabit SRAM module The CYM 1840 is a high-performance 8 -megabit static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx 4 SRAM s in


    OCR Scan     		CYM1840 1840PD --20C --25C --30C --35C PDF

    Untitled

    Abstract: No abstract text available
    Text: Order this data sheet by 8S256/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military 8S256 Advance Information 256K x 8 CMOS SRAM Multichip Module The Motorola 8S256 is a CMOS SRAM housed in a hermetically sealed ceramic 32 pin package. Featuring JEDEC standard pinouts, the device provides 256K bytes of


    OCR Scan     		8S256/D 8S256 8S256 1PHX33399-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY S12C 256K SR A M D IE MICRON ft- n u —.m¡T. we. SRAM DIE 256K SRAM 2 5 6 K X 1, 6 4 K x 4 , 3 2 K x 8 FEATURES • Single 3.3V ±0.3V power supply 3.3V ±0.2V for 12ns and faster • 5V -tolerantI/0 • Common data inputs and data outputs (separate data


    OCR Scan     		150mm 114x114 C1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: □PM DPS256S8P Dense-Pac Microsystems, Inc. 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The D P S256 S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 1 2 8 K X 8 m o no lithic SR A M 's, an advanced high-speed C M O S d e co d er and deco upling


    OCR Scan     		DPS256S8P DPS256S8P 600-mil-wide, 32-pin S256S8P 120ns 150ns PDF

    Untitled

    Abstract: No abstract text available
    Text: □PM DPS6434 Dense-Pac Microsystems, Inc . , 64K X 32 CM OS SRAM M ODULE DESCRIPTION: The DPS6434 is a fully asyncronous Static Random Access Memory SRAM and may be organized as 64K X 3 2 ,1 2 8 X 16 or 256K X 8. T h e module is built with eight low-power C M O S


    OCR Scan     		DPS6434 DPS6434 32-bit 150ns 30A038-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: <DPS256S8AN HIGH SPEED MILITARY 256K X 8 CMOS SRAM MODULE ADVANCED INFORMATION DESCRIPTION: The DPS256S8AN is a high speed m ilitary 256K X 8 high-density, lo w -po w er static RAM m odule com prised o f tw o high speed ceram ic 128K X 8 m o n o lith ic SRAM's, an advanced high-speed C M O S decoder and


    OCR Scan     		DPS256S8AN DPS256S8AN PDF

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 2ÔE D CDPM Dense-Pac Microsystems, Inc. ^ • STSRMIS GDDüMTG H « » P C DPS256S8AN HIGH SPEED MILITARY 256K X 8 CMOS SRAM MODULE ADVANCED INFORMATION 7:y¿-23-/V DESCRIPTION: The DPS256S8AN is a high speed military 256K X 8 high-density, low-power static RAM module comprised


    OCR Scan     		DPS256S8AN DPS256S8AN 600-mil-wide, 32-pin 30A036-31 T-46-23-14 PDF

    7M199

    Abstract: No abstract text available
    Text: _CY7M199 SEMICONDUCTOR 32K x 8 SRAM Module Features Functional Description • Very high speed 256k SRAM module — Access time o f 10 nsec. The CY7M199 is an extremely high per­ formance 256-kilobit static RAM module organized as 32,768 words by 8 bits. This


    OCR Scan     		CY7M199 300-mil-wide 7C199 CY7M199 CY7M199-12DC 199-UDM CY7M199-15DC CY7M199-15DMB CY7M199-20DMB 7M199 PDF

    Untitled

    Abstract: No abstract text available
    Text: MK48256 N,S -100/120 MK48256L(N,S)-100/120 SGS-THOMSON •y 256K (262,144-BIT) 32K x 8 CMOS SRAM □ BYTEWYDE 32K X 8 CMOS SRAM □ Equal Cycle/Access Times, 100,120ns max. □ Low Vcc Data Retention 2 Volts A 14 □ Three State Output □ FIGURE 1. PIN CONFIGURATION


    OCR Scan     		MK48256 MK48256L 144-BIT) 120ns PDF

    Untitled

    Abstract: No abstract text available
    Text: CYM1400 ' — 32K x 8 SRAM Module PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • Very high speed 256K SRAM module T he C Y M 1400 is an extremely high performance 256-kilobit static RAM module organized as 32,768 words by 8 bits. This module is constructed using


    OCR Scan     		300-mil-wide 7C199 CYM1400 CYM1400HD-10C CYM1400HD-12C CYM1400HD-12MB CYM1400HD-15C CYM1400HD-15MB PDF

    SMD A7c

    Abstract: A12CA
    Text: This is a partial data sheet. F o r com plete data sheet, see Section 2, Static RAMs. CYM1400 _PRELIMINARY SEMICONDUCTOR 32K x 8 SRAM Module Features Functional Description • Very high speed 256K SRAM module The CYM1400 is an extremely high


    OCR Scan     		CYM1400 300-mil-wide 7C199 1400HD-10 1400HD-12 1400HD-15 1400HD-20 SMD A7c A12CA PDF