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    256K FIFO DRAM Search Results

    256K FIFO DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74F433SPC Rochester Electronics LLC FIFO, Visit Rochester Electronics LLC Buy
    AM7200-25JC Rochester Electronics LLC FIFO Visit Rochester Electronics LLC Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    MD28F020-12/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy

    256K FIFO DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DI-22

    Abstract: MS8104160 MS81V04160 MSM51V8222A
    Text: OKI Semiconductor MS81V04160 REVISION1 1999.4.15 Dual FIFO 262,214-word x 8-Bits x 2 GENERAL DESCRIPTION The MS81V04160 is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 256k x 8-bit high-speed


    Original     		PDF MS81V04160 214-word MS81V04160 MS81V04160, MSM51V8222A) DI-22 MS8104160 MSM51V8222A

    MS81V04160

    Abstract: DI-22 MSM51V8222A MS8104160
    Text: FEDS81V04160-03 OKI Semiconductor MS81V04160 REVISION3 2000.9.28 Dual FIFO 262,214-word x 8-Bits x 2 GENERAL DESCRIPTION The MS81V04160 is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 256k x 8-bit high-speed


    Original     		PDF FEDS81V04160-03 MS81V04160 214-word MS81V04160 MS81V04160, MSM51V8222A) lon0-27 DI-22 MSM51V8222A MS8104160

    MS8104160

    Abstract: DI-22 DO-14 MS81V04160 MSM518222A
    Text: FEDS8104160-03 OKI Semiconductor MS8104160 REVISION3 2000.9.28 262,214-word x 8-Bits x 2 Dual FIFO GENERAL DESCRIPTION The MS8104160 is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 256k x 8-bit high-speed


    Original     		PDF FEDS8104160-03 MS8104160 214-word MS8104160 MS8104160, MSM518222A) term17/20-27 DI-22 DO-14 MS81V04160 MSM518222A

    Untitled

    Abstract: No abstract text available
    Text: OKI Semiconductor MS81V04160 262,214-word x 8-Bits x 2 Dual FIFO GENERAL DESCRIPTION The MS81V04160 is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 256k x 8-bit high-speed asynchronous read/write operation.


    Original     		PDF MS81V04160 214-word MS81V04160 MS81V04160, MSM51V8222A)

    Untitled

    Abstract: No abstract text available
    Text: FEDS81V04160-02 OKI Semiconductor MS81V04160 REVISION2 2000.4.24 Dual FIFO 262,214-word x 8-Bits x 2 GENERAL DESCRIPTION The MS81V04160 is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 256k x 8-bit high-speed


    Original     		PDF FEDS81V04160-02 MS81V04160 214-word MS81V04160 MS81V04160, MSM51V8222A)

    Untitled

    Abstract: No abstract text available
    Text: FEDS8104160-02 OKI Semiconductor MS8104160 REVISION2 2000.4.24 262,214-word x 8-Bits x 2 Dual FIFO GENERAL DESCRIPTION The MS8104160 is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 256k x 8-bit high-speed


    Original     		PDF FEDS8104160-02 MS8104160 214-word MS8104160 MS8104160, MSM518222A) FEDS8104160-02

    MS8104166

    Abstract: MSM518222A PEDS8104166-01
    Text: PEDS8104166-01 1Semiconductor MS8104166 This version: Dec. 2001 Preliminary Dual FIFO 262,214 Words x 8 Bits × 2 GENERAL DESCRIPTION The MS8104166 is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k × 8-bit high-speed asynchronous read/write operation.


    Original     		PDF PEDS8104166-01 MS8104166 MS8104166 MSM518222A) MSM518222A PEDS8104166-01

    MS81V04166

    Abstract: MSM51V8222A
    Text: PEDS81V04166-01 1Semiconductor MS81V04166 This version: Dec. 2001 Preliminary Dual FIFO 262,214 Words x 8 Bits × 2 GENERAL DESCRIPTION The MS81V04166 is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k × 8-bit high-speed asynchronous read/write operation.


    Original     		PDF PEDS81V04166-01 MS81V04166 MS81V04166 MSM51V8222A) MSM51V8222A

    MS8104166A

    Abstract: MSM518222A DO21 package
    Text: OKI Semiconductor MS8104166A FEDS8104166A-01 This version: Nov.,21, 2002 Dual FIFO 262,214 Words x 8 Bits × 2 GENERAL DESCRIPTION The MS8104166A is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k × 8-bit high-speed asynchronous read/write operation.


    Original     		PDF MS8104166A FEDS8104166A-01 MS8104166A MSM518222A) MSM518222A DO21 package

    MS81V04166A-XXTB

    Abstract: MS81V04166A MSM51V8222A
    Text: OKI Semiconductor MS81V04166A FEDS81V04166A-01 This version: Nov.,21, 2002 Dual FIFO 262,214 Words x 8 Bits × 2 GENERAL DESCRIPTION The MS81V04166A is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k × 8-bit high-speed asynchronous read/write operation.


    Original     		PDF MS81V04166A FEDS81V04166A-01 MS81V04166A MSM51V8222A) MS81V04166A-XXTB MSM51V8222A

    um61256

    Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
    Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 um61256 PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245

    ALI chipset Ali 3516

    Abstract: SEM 2006 6216 static ram sem 2005 ALI chipset Ali 3510 vl82c483 ali 3516 CMOS 5408 PAL Decoder 16L8 1K x 8 static ram
    Text: June 1996 Cypres Semiconductor Corporation NUMERIC DEVICE INDEX Document Number Device Number 5000 5000 3518 3518 3519 CY101E383 CY10E383 CY2071 CY2081 CY2250 3522 3509 CY2252 CY2254A 3510 CY2255 3517 CY2257 3520 CY2260 3511 3023 3024 3011 3013 3019 3006 3023


    Original     		PDF CY101E383 CY10E383 CY2071 CY2081 CY2250 CY2252 CY2254A CY2255 CY2257 CY2260 ALI chipset Ali 3516 SEM 2006 6216 static ram sem 2005 ALI chipset Ali 3510 vl82c483 ali 3516 CMOS 5408 PAL Decoder 16L8 1K x 8 static ram

    8002 AUDIO amplifier

    Abstract: 0000-018F SPRU642 0000019C SPRU401 TMS320C64X programming TMS320C6000 C6000 SPRU189 SPRU190
    Text: TMS320C620x/C670x DSP Boot Modes and Configuration Reference Guide Literature Number: SPRU642 July 2003 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF TMS320C620x/C670x SPRU642 C6201 C6202 C6203 C6204 C6205 C6701 8002 AUDIO amplifier 0000-018F SPRU642 0000019C SPRU401 TMS320C64X programming TMS320C6000 C6000 SPRU189 SPRU190

    Untitled

    Abstract: No abstract text available
    Text: OKI Semiconductor MS81V04160 262,214-word x 8-Bits x 2 Dual FIFO GENERAL DESCRIPTION The MS81V04160 is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 256k x 8-bit high-speed asynchronous read/write operation.


    OCR Scan     		PDF MS81V04160 214-word MS81V04160 MS81V04160, MSM51V8222A) S81V04160

    MS8104160

    Abstract: MS81V04160 MSM51V8222A
    Text: OKI Semiconductor MS81V04160 262,214-word x 8-Bits x 2 Dual FIFO G ENERAL DESCRIPTION The M S81V 04160 is a single-chip 4M b FIFO functionally com posed of tw o OKI 2M b FIFO (First-In First-Out) m em ories w hich w ere designed for 256k x 8-bit high-speed


    OCR Scan     		PDF MS81V04160 214-word MS81V04160 MS81V04160, MSM51V8222A) MS8104160 MSM51V8222A

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    samsung 64k nmos static ram

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 COMPONENT KM XX X C DEVICE TYPE •4 •42 •6 •23 •28 •93 •75 •65 DRAM VIDEO MEMORY SRAM MASK ROM STANDARD EEPROM Serial EEPROM FIFO PSEUDO ORGANIZATION • 1 : X1 •4 : X4 •8 : X8 •9 : X9


    OCR Scan     		PDF 100ns 120ns 200ns 100ns 120ns 150ns 200ns 75CXXA samsung 64k nmos static ram

    Untitled

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 COM PONENT KM XX X C XXXX X X X X - XX DEVICE TYPE SPEED •4 : •42: •6 : •23: •28: •93: •75: •65: •6: 60ns •7: 70ns •8: 80ns •10: 100ns •12: 120ns •20: 200ns DRAM VIDEO MEMORY


    OCR Scan     		PDF 100ns 120ns 200ns 100ns 120ns 150ns 200ns 75CXXA

    CL-GD5320

    Abstract: hercules hgc 45X30 crt monitor circuit diagram index 173 sb 6845 8bit vga controller pcb layout ibm 8088 xt 1056x480 BT22 3dd PC MOTHERBOARD ibm rev 1.5 NEC MultiSync
    Text: CL-GD5320 Data Sheet FEATURES • 100-pin QFP slngle-chlp VGA ■ TWo 256K x 4 DRAM Interface ■ 100% hardware-reglster- and BIOS-compatible with VGA, EGA, CGA, MDA and Hercules HGC ■ Fully compatible motherboard VGA solution for IBM* PS/2 Model 30 ■ Motherboard VGA solution with only seven ICs


    OCR Scan     		PDF CL-GD5320 100-pin 8/16-blt 132-column CL-GD5325 CL-GD5320 hercules hgc 45X30 crt monitor circuit diagram index 173 sb 6845 8bit vga controller pcb layout ibm 8088 xt 1056x480 BT22 3dd PC MOTHERBOARD ibm rev 1.5 NEC MultiSync

    samsung dram

    Abstract: cmos 4001 dip
    Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X DRAM X XXXXX X X X SPEED ORGANIZATION X1 X4 X8 X9 X16 X18 PROCESS & POWER •C: CMOS, 5V •V: CMOS, 3 3V •6 •7 : •8 : •10: 60ns 70ns 80ns 100ns PACKAGE DIP SOJ ZIP TS O P n TR: Reverse


    OCR Scan     		PDF 100ns 16M/4K, 16M/2K, 16M/1K, 75CXXA samsung dram cmos 4001 dip

    Untitled

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED 6 0n s ORGANIZATION •7 • 1: XI • 4: X4 70ns 80ns •1 0 100ns • 8 X8 • 9 X9 •1 6 X16 •1 8 X1S PROCESS & POWER •C CMOS. 5V •V CMOS. 3 3V PACKAGE


    OCR Scan     		PDF 100ns 16M--4K. I256K. 25SOIC 75CXXA

    SC4M

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : 60ns •7 • 70ns •8 : 80ns •10: 100ns ORGANIZATION • 8 • 9 •16 • 18 X1 X4 X8 X9 X16 X18 PROCESS & POWER •C CMOS, 5V •V CMOS, 3 3V PACKAGE


    OCR Scan     		PDF 100ns 16M/4K, 16M/2K, 16M/1K, 75CXXA 100ns SC4M