manual cd550
Abstract: panduit ct
Text: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. 1.44” [37] CT-2525CH, CT-2550CH & CT-2500CH WITH LOCATOR NOTES, UNLESS OTHERWISE SPECIFIED: 1.25” [32] CT-2570CH (WITHOUT LOCATOR)
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CT-2525CH,
CT-2550CH
CT-2500CH
CT-2570CH
CT-2500
CT-2500/E
CT-2525CH
manual cd550
panduit ct
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Untitled
Abstract: No abstract text available
Text: 19.05mmx3.81mm LED LIGHT BAR Part Number: KB-2550CGKD Green Description Features Uniform light emitting area. The Green source color devices are made with AlGaInP on Low current operation. GaAs substrate Light Emitting Diode. Easily mounted on P.C. boards.
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05mmx3
KB-2550CGKD
DSAH1487
JAN/04/2011
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Untitled
Abstract: No abstract text available
Text: 19.05mmx3.81mm LED LIGHT BAR Part Number: KB-2550CGKD Green Features Description z Uniform light emitting area. The Green source color devices are made with AlGaInP on z Low current operation. GaAs substrate Light Emitting Diode. z Easily mounted on P.C. boards.
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05mmx3
KB-2550CGKD
DSAH1487
MAY/16/2013
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KB-2550CGKD
Abstract: No abstract text available
Text: 19.05mmx3.81mm LED LIGHT BAR Part Number: KB-2550CGKD Green Features Description z Uniform light emitting area. The Green source color devices are made with AlGaInP on z Low current operation. GaAs substrate Light Emitting Diode. z Easily mounted on P.C. boards.
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PDF
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05mmx3
KB-2550CGKD
DSAH1487
JAN/04/2011
KB-2550CGKD
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CT2500
Abstract: PANDUIT manual cd550 crimping die 4 WAY BATTERY CHARGER
Text: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. 1.44” [37] CT-2525CH, CT-2550CH & CT-2500CH WITH LOCATOR NOTES, UNLESS OTHERWISE SPECIFIED: 1.25” [32] CT-2570CH (WITHOUT LOCATOR)
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CT-2525CH,
CT-2550CH
CT-2500CH
CT-2570CH
CT-2500
CT-2500/E
DRAWINGS\TP25386B01
CT2500
PANDUIT
manual cd550
crimping die
4 WAY BATTERY CHARGER
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Untitled
Abstract: No abstract text available
Text: 19.05mmx3.81mm LED LIGHT BAR Part Number: KB-2550CGKD Green Features Description z Uniform light emitting area. The Green source color devices are made with AlGaInP on z Low current operation. GaAs substrate Light Emitting Diode. z Easily mounted on P.C. boards.
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PDF
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05mmx3
KB-2550CGKD
DSAH1487
MAY/21/2010
KB-2550CGKD
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NF2W757AR-V1
Abstract: NF2W757ART-V1 NF2W757ART RJA34
Text: NICHIA STS-DA1-2550C <Cat.No.130313> NICHIA CORPORATION SPECIFICATIONS FOR WHITE LED NF2W757ART-V1 ● Pb-free Reflow Soldering Application ● Built-in ESD Protection Device ● RoHS Compliant NICHIA STS-DA1-2550C <Cat.No.130313> SPECIFICATIONS 1 Absolute Maximum Ratings
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STS-DA1-2550C
NF2W757ART-V1
NF2W757AR-V1
NF2W757ART-V1
NF2W757ART
RJA34
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2550CT
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 25 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency
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MBR2530CT
2560CT
O-220AB
O-220AB
2550CT
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Untitled
Abstract: No abstract text available
Text: MBR2535CT - MBR2560CT 25 A Schottky Barrier Rectifiers Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward Voltage Drop • Guard Ring for Over-Voltage Protection OVP
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MBR2535CT
MBR2560CT
O-220AB
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2535CT
Abstract: 2545CT MBR2535CT MBR2560CT
Text: MBR2535CT - MBR2560CT Features • • • • • • 0.185 4.70 0.175(4.44) 0.412(10.5) MAX 0.055(1.40) 0.045(1.14) 0.154(3.91) 0.148(3.74) Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity
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MBR2535CT
MBR2560CT
O-220AB
2535CT
2545CT
MBR2560CT
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2535CT
Abstract: 2545CT MBRF2535CT
Text: M BRF2535CT THRU M BRF2560CT Isolation 25.0 AM PS. Schottky Barrier Rectifiers Voltage Range 35 to 60 Volts Current 25.0 Amperes ITO-220AB Features .185 4.7 .173(4.4) Plastic m aterial used carries Underwriters Laboratory Classifications 94V-0 M etal silicon junction, m ajority carrier conduction
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BRF2535CT
BRF2560CT
ITO-220AB
MBRF2535CT-MBRF2545CT
MBRF2550CT
MBRF2560CT
50mVp-p
2535CT
2545CT
MBRF2535CT
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2545ct
Abstract: 2520CT 2530CT 2540CT SB25100CT SB2520CT
Text: WTE POWER SEMICONDUCTORS SB2520CT – SB25100CT Pb 25A DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability
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SB2520CT
SB25100CT
O-220,
MIL-STD-202,
O-220
13uracies.
2545ct
2520CT
2530CT
2540CT
SB25100CT
SB2520CT
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C3502
Abstract: C2201 C3002 MPC3302 SP1200SF
Text: Consolidated Results for the 6 months ended September 30, 2012 October 30, 2012 Zenji Miura, Director, Deputy President & CFO Ricoh Company, Ltd. A large screen signage, made up of three Ricoh ultra-short-throw projectors connected together at the 2012 Annual Meetings of
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FY2013/03
FY2012/03
FY11/03
FY12/03
FY13/03
FY12/03
FY09/03
C3502
C2201
C3002
MPC3302
SP1200SF
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Untitled
Abstract: No abstract text available
Text: WTE POWER SEMICONDUCTORS SB2520CT – SB25100CT Pb 25A DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability
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SB2520CT
SB25100CT
O-220,
MIL-STD-202,
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24 V DC to 3 Phase 220 v INVERTERS
Abstract: 125OC 2535CT 2545CT MBR2535CT MBR2560CT
Text: MBR2535CT THRU MBR2560CT 30.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 60 Volts Current 30.0 Amperes TO-220 Features a a a a a a a a Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction
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MBR2535CT
MBR2560CT
O-220
260oC/10
O-220
MIL-STD-750
5CT-MBR2545CT
MBR2550CT
MBR2535CT-MBR2545CT
24 V DC to 3 Phase 220 v INVERTERS
125OC
2535CT
2545CT
MBR2560CT
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sblb
Abstract: 80CT 2530CT 2535CT 2540CT 2545CT SBLB2530CT
Text: BL GALAXY ELECTRICAL SBLB2530CT - - - SBLB25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 25 A SCHOTTKY BARRIER RECTIFIER FEATURES D2PAK Metal-Semiconductor junction with guard ring Epitaxial construction 0.190 4.83 0.172(4.37) 0.421(10.69) 0.380(9.65) Low forward voltage drop,low switching losses
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SBLB2530CT
SBLB25100CT
SBLB2530CT-SBLB2545CT
SBLB2580CT-SBLB25100CT
SBLB2550CT-SBLB2560CT
sblb
80CT
2530CT
2535CT
2540CT
2545CT
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tc100 le
Abstract: 2530CT 2535CT 2540CT 2545CT SBL2530CT
Text: BLGALAXY ELECTRICAL SBL2530CT - - - SBL25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 25 A SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AB Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability
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SBL2530CT
SBL25100CT
O-220AB
O-220AB
STD-750
08ounce,
SBL2530CT-SBL2545CT
SBL2580CT-SBL25100CT
SBL2550CT-SBL2560CT
tc100 le
2530CT
2535CT
2540CT
2545CT
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Untitled
Abstract: No abstract text available
Text: MBRS2535CT THRU MBRS2560CT 25.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 60 Volts Current 25.0 Amperes D2PAK Features For surface mounted application Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction
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MBRS2535CT
MBRS2560CT
260oC/10
MIL-STD-750,
MBRS2535CT-MBRS2545CT
MBRS2550CT
50mVp-p
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1000C
Abstract: 2530CT 2540CT SB2520CT sb25150ct
Text: SB2520CT thru SB25150CT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 TO 150 VOLTS CURRENT - 25 AMPERES TO-220AB FEATURES MECHANICAL DATA Plastic Package has Underwriters Laboratory Flammability Classification 94-0 utilizing Flame Retardant Epoxy Molding Compound
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SB2520CT
SB25150CT
O-220AB
MIL-S-19500/228
260oC/10seconds
O220AB
1000C
2530CT
2540CT
sb25150ct
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2535c
Abstract: 2560C MBRF2535CT MBRF2550CT MBRF2560CT 2550C
Text: M B R F 2535C T T H R U M B R F 2560C T Isolation 25.0 A M P S . S chottky B arrier R ectifiers V oltage R ange 35 to 60 V olts C urrent 25.0 A m peres IT O -220A B F eatu res P lastic m aterial used carries U nderw riters Laboratory C lassifications 94V -0
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2535C
2560C
-220A
MBRF2535CT-MBRF2545CT
MBRF2550CT
MBRF2560CT
50mVp-p
MBRF2535CT
MBRF2550CT
MBRF2560CT
2550C
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2545CT
Abstract: 2535CT MBR2535CT MBR2560CT
Text: Features • • • • • • Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward
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O-220AB
2535CT
2545CT
2550CT
2560CT
2545CT
2535CT
MBR2535CT
MBR2560CT
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30 MBR
Abstract: 2540CT 2535c 2530CT 2535CT 2545CT MBR2530CT MBR2560CT
Text: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency
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MBR2530CT
2560CT
O-220AB
O-220AB
300us
MBR2545CT
MBR2550CT
MBR2560CT
30 MBR
2540CT
2535c
2530CT
2535CT
2545CT
MBR2560CT
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2545CT
Abstract: No abstract text available
Text: SB2520CT – SB25100CT 25A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability
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SB2520CT
SB25100CT
O-220
O-220,
MIL-STD-202,
2545CT
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2535CT
Abstract: 2545CT MBR2535CT MBR2560CT
Text: E M IC O N D U C T O R 1 MBR2535CT - MBR2560CT 0 .055 1.40 0 .045 (1.14 ) Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier
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OCR Scan
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PDF
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MBR2535CT
MBR2560CT
O-220AB
MBR2560CT,
2535CT
2545CT
MBR2560CT
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