FMMT497
Abstract: FMMT597 0401mA DSA003696
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 ISSUE 3 DECEMBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 1mA 10mA 100mA 1A 0.1 Collector-Base Voltage Collector-Emitter Voltage 10mA 1mA 100mA 1A IC-Collector Current VCE sat v IC V+-=10V 0.9 +100 °C
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FMMT497
100mA
100mA,
250mA,
100MHz
FMMT497
FMMT597
0401mA
DSA003696
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ZTX415
Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation
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ZTX415
200mA
620pF
100mA
20MHz
100MHz
ZTX415
transistor 200V 100MA NPN
AVALANCHE TRANSISTOR
DSA003766
3171 i.c
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Untitled
Abstract: No abstract text available
Text: TELEPHONE- 97? 376-2822 (212)227-8005 FAX- (973) 376-8860 20 STERN AVE SPRINQRELO, NEW JERSEY 07081 USA 2N3738 MECHANICAL DATA Dimensions in mm 3.68 (0.145) raft. POWER TRANSISTORS NPN SILICON 6.35 (0.250) 8.64 (0.340) f -* 3.61 (0.142) 4.08(0.161) ratf ~
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2N3738
O-213AA)
100mA
250mA
10MHz
100KHz
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3738 MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 1 24.13 (0.95) 24.63 (0.97) POWER TRANSISTORS NPN SILICON
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2N3738
O-213AA)
100mA
10MHz
100KHz
100mA
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PDF
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2N3738
Abstract: No abstract text available
Text: 2N3738 MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 1 24.13 (0.95) 24.63 (0.97) POWER TRANSISTORS NPN SILICON
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2N3738
O-213AA)
10MHz
100KHz
100mA
2N3738
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tf 115 250v 2a
Abstract: BUL53B
Text: BUL53BSM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA 11.5 2.0 0.25 3.5 1 3.0 3 FAST SWITCHING tf = 100ns 9.0 1.5 15.8 4.6 3.5 2 HIGH ENERGY RATING FEATURES 8.5 TO220 Ceramic Surface Mount Package
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BUL53BSM
100ns)
100mA
10MHz
tf 115 250v 2a
BUL53B
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vce 500v NPN Transistor
Abstract: BUL53BSMD
Text: BUL53BSMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )
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BUL53BSMD
100ns)
100mA
300ms
10MHz
vce 500v NPN Transistor
BUL53BSMD
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Untitled
Abstract: No abstract text available
Text: BUL53BSMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )
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BUL53BSMD
100ns)
100mA
300ms
10MHz
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BUW34
Abstract: 250V 100MA NPN C 38 marking code transistor buw35
Text: Central BUW34 BUW35 BUW36 TM Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BUW34, BUW35, and BUW36 types are silicon NPN power transistors designed for high voltage, fast switching applications. MARKING: FULL PART NUMBER
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BUW34
BUW35
BUW36
BUW34,
BUW35,
100mA
250V 100MA NPN
C 38 marking code transistor
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation
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ZTX415
100mA
200mA
620pF
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PDF
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FMMT415
Abstract: No abstract text available
Text: FMMT415 FMMT417 SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ISSUE 4 - OCTOBER 1995 ✪ FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns APPLICATIONS * Laser LED drivers * Fast edge generation
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FMMT415
FMMT417
100mA
200mA
FMMT415
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FMMT497
Abstract: MARKING SMD npn TRANSISTOR
Text: Transistors SMD Type High Voltage High Performance Transistor FMMT497 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 NPN silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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FMMT497
OT-23
100mA
250mA
100mA,
250mA,
100MHz
FMMT497
MARKING SMD npn TRANSISTOR
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pnp 500v
Abstract: vbe 10v, vce 500v NPN Transistor NTE175 NTE38
Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
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NTE38
NTE175
NTE38:
200mA
NTE175:
NTE38
875mA
pnp 500v
vbe 10v, vce 500v NPN Transistor
NTE175
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nte175
Abstract: NTE38
Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching
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NTE38
NTE175
NTE38:
200mA
NTE175:
NTE38
875mA
nte175
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FMMT497
Abstract: FMMT597 TS16949
Text: FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 300 V Collector-emitter voltage
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FMMT497
FMMT597
D-81541
FMMT497
FMMT597
TS16949
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NTE2521
Abstract: No abstract text available
Text: NTE2521 Silicon NPN Transistor Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 400MHz Typ D High Breakdown Voltage: VCEO ≥ 250V Min D High Current D Low Reverse Transfer Capacitance and Excellent HF Response Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE2521
400MHz
NTE2521
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 HIGH PERFORMANCE TRANSISTOR ISSUE 3 - DECEMBER 1995 O COMPLIMENTARY T Y P E - FMMT597 PARTMARKING D ETAIL- 497 I- SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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OCR Scan
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FMMT497
FMMT597
100MHz
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA
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350mA
380MHz
650MHz
600MHz
200mA
300MHz
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481
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OCR Scan
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MMBT2369
BC818-16
BC818-25
BC818-40
BC848A
BC848B
BC848C
BCW31
BCW32
BCW33
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LAB 250 LB
Abstract: No abstract text available
Text: Illl = & = Illl SEME BUL53B-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA • CERAMIC SURFACE MOUNT PACKAGE :- ► , • FULL MIL/AEROSPACE TEMPERATURE RANGE 2.0 3.5 < ► 4— * 9'f <-
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OCR Scan
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BUL53B-SM
100ns)
T0220
100mA
100mA
10MHz
LAB 250 LB
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Untitled
Abstract: No abstract text available
Text: Illl Illl BUL53B-SM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11 .fi • CERAMIC SURFACE MOUNT PACKAGE —*i 3.0 ri-H 0.25 • FULL MIL/AEROSPACE TEMPERATURE RANGE • SCREENING OPTIONS FOR MILITARY AND
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BUL53B-SM
100ns)
T0220
100mA
D0D14Ã
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BT5401
Abstract: No abstract text available
Text: Transistors Reel = 500pcs, Bag = lOOpcs. SOT23 Case NPN T ype m iniR eel O rd e r N um ber N P N H ig h F req u en cy BF840 73-8400 BF841 73-8410 M M BTH 10 73-0010 M M BT918 73-0918 N P N L ow N ise M M BT5089 73-5089 M M BT5088 73-5088 BC850B 73-8501 B C850C
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500pcs,
BF840
BF841
BT918
BT5089
BT5088
BC850B
C850C
BT2484
SR19A
BT5401
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PDF
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S1377
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE S1377 Unit in ram MEDIUM POWER AMPLIFIER APPLICATIONS. 9.9MAX. 0Z.2±aZ TV HORIZONTAL DRIVER APPLICATIONS. FEATURES: . High Collector to Emitter Breakdown Voltage -• Vcfi0=250V MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL
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OCR Scan
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S1377
100mA
200mA,
S1377
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PDF
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TIP49
Abstract: tip50
Text: PANASONIC INDL/ELEK -CIO 15E D • bTBSÖSE 0D1G437 4 ■ Silicon NPN Power Transistors TO-220 Package Absolute Maximum Ratings Tä=25°C Rem Symbol TIP49 TIP48 400 450 TIP50 500 300 350 400 Collector-Base Voltage VCBO Coliector-Emitter Voltage Emitter-Base Voltage
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0D1G437
O-220
TIP47
TIP48
TIP49
TIP50
10MHz
--10V,
100mA,
100mA
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