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    250US Search Results

    250US Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    X9250US24ZT1 Renesas Electronics Corporation Quad Digitally Controlled Potentiometer (XDCP™) Visit Renesas Electronics Corporation
    X9250US24IZ-2.7 Renesas Electronics Corporation Quad Digitally Controlled Potentiometer (XDCP™) Visit Renesas Electronics Corporation
    X9250US24Z-2.7 Renesas Electronics Corporation Quad Digitally Controlled Potentiometer (XDCP™) Visit Renesas Electronics Corporation
    X9250US24IZ-2.7T1 Renesas Electronics Corporation Quad Digitally Controlled Potentiometer (XDCP™) Visit Renesas Electronics Corporation
    X9250US24Z-2.7T1 Renesas Electronics Corporation Quad Digitally Controlled Potentiometer (XDCP™) Visit Renesas Electronics Corporation
    SF Impression Pixel

    250US Price and Stock

    Renesas Electronics Corporation X9250US24Z-2.7T1

    IC DGTL POT 50KOHM 256TAP 24SOIC
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    DigiKey X9250US24Z-2.7T1 Cut Tape 2,497 1
    • 1 $15.65
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    • 100 $12.1497
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    X9250US24Z-2.7T1 Digi-Reel 2,497 1
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    X9250US24Z-2.7T1 Reel 2,000 1,000
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    Avnet Americas X9250US24Z-2.7T1 Reel 26 Weeks, 1 Days 1,000
    • 1 $16.76
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    Avnet Silica X9250US24Z-2.7T1 20 Weeks 1,000
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    Renesas Electronics America X9250US24Z-2.7T1 Tape & Reel (TR) 2,497 1
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    Rubycon Corporation 250USG1000MEFCSN25X45

    CAP ALUM 1000UF 20% 250V SNAP TH
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    DigiKey 250USG1000MEFCSN25X45 Bulk 2,144 1
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    Verical 250USG1000MEFCSN25X45 148 8
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    Master Electronics 250USG1000MEFCSN25X45 150
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    Renesas Electronics Corporation X9250US24Z

    IC DGTL POT 50KOHM 256TAP 24SOIC
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    DigiKey X9250US24Z Tube 751 1
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    Avnet Americas X9250US24Z Tube 26 Weeks, 1 Days 360
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    TME X9250US24Z 1
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    Avnet Silica X9250US24Z 20 Weeks 30
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    Renesas Electronics America X9250US24Z Tube 751 1
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    onsemi FSB50250US

    MODULE SPM 500V 1.1A SPM23BD
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    DigiKey FSB50250US Reel 450 450
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    FSB50250US Digi-Reel 450 1
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    FSB50250US Cut Tape 450 1
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    Avnet Americas FSB50250US Reel 4 Weeks 84
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    FSB50250US Reel 23 Weeks 450
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    Newark FSB50250US Reel 450
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    Rochester Electronics FSB50250US 151 1
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    Richardson RFPD FSB50250US 450
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    Avnet Silica FSB50250US 24 Weeks 450
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    Renesas Electronics Corporation X9250US24IZ-2.7

    IC DGTL POT 50KOHM 256TAP 24SOIC
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    DigiKey X9250US24IZ-2.7 Tube 240 1
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    Avnet Americas X9250US24IZ-2.7 Tube 4 Weeks 22
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    X9250US24IZ-2.7 Tube 26 Weeks, 1 Days 240
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    TME X9250US24IZ-2.7 1
    • 1 $29.8
    • 10 $26.5
    • 100 $24.4
    • 1000 $18.6
    • 10000 $18.6
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    Ameya Holding Limited X9250US24IZ-2.7 128
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    Avnet Silica X9250US24IZ-2.7 20 Weeks 30
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    Flip Electronics X9250US24IZ-2.7 550
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    Renesas Electronics America X9250US24IZ-2.7 Tube 240 1
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    • 100 $20.17467
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    250US Datasheets (83)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    250USC1000MEFC30X40 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1000UF 20% 250V SNAP Original PDF
    250USC1000MEFC35X35 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1000UF 20% 250V SNAP Original PDF
    250USC1000MEFCSN30X40 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 1000UF 250V 20% SNAP Original PDF
    250USC1000MEFCSN35X35 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 1000UF 250V 20% SNAP Original PDF
    250USC1200MEFC30X45 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1200UF 20% 250V SNAP Original PDF
    250USC1200MEFCSN30X45 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 1200UF 250V 20% SNAP Original PDF
    250USC1500MEFC35X40 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1500UF 20% 250V SNAP Original PDF
    250USC1500MEFCSN35X40 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 1500UF 250V 20% SNAP Original PDF
    250USC1800MEFC35X50 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1800UF 20% 250V SNAP Original PDF
    250USC1800MEFCSN35X50 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 1800UF 250V 20% SNAP Original PDF
    250USC220MEFC20X25 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 220UF 20% 250V SNAP Original PDF
    250USC220MEFC22X25 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 220UF 20% 250V SNAP Original PDF
    250USC220MEFCSN20X25 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 220UF 250V 20% SNAP Original PDF
    250USC270MEFC20X30 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 270UF 20% 250V SNAP Original PDF
    250USC270MEFC22X25 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 270UF 20% 250V SNAP Original PDF
    250USC270MEFCSN20X30 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 270UF 250V 20% SNAP Original PDF
    250USC330MEFC20X35 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 330UF 20% 250V SNAP Original PDF
    250USC330MEFC22X30 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 330UF 20% 250V SNAP Original PDF
    250USC330MEFCSN22X30 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 330UF 250V 20% SNAP Original PDF
    250USC330MEFCSN25X25 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 330UF 250V 20% SNAP Original PDF

    250US Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 250US Micro-Measurements General Purpose Strain Gages - Shear/Torque Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250US-120 CEA-XX-250US-350 120 ± 0.4% 350 ± 0.4% actual size DESCRIPTION Four-element full-bridge pattern for shear-strain measurement. Grids are spaced 90° apart, and 45° from


    Original     		PDF 250US CEA-XX-250US-120 CEA-XX-250US-350 27-Apr-2011

    CEA-XX-250US-350

    Abstract: No abstract text available
    Text: 250US Micro-Measurements General Purpose Strain Gages - Shear/Torque Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250US-120 CEA-XX-250US-350 120 ± 0.4% 350 ± 0.4% actual size DESCRIPTION Four-element full-bridge pattern for shear-strain measurement. Grids are spaced 90° apart, and 45° from


    Original     		PDF 250US CEA-XX-250US-120 CEA-XX-250US-350 22-Feb-10 CEA-XX-250US-350

    strain gage

    Abstract: strain Gages Vishay CEA-XX-250US-350
    Text: 250US Vishay Micro-Measurements General Purpose Strain Gages - Shear/Torque Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250US-120 CEA-XX-250US-350 120 ± 0.4% 350 ± 0.4% P2 P2 DESCRIPTION Four-element full-bridge pattern for shear-strain measurement. Grids are spaced 90° apart, and 45° from


    Original     		PDF 250US CEA-XX-250US-120 CEA-XX-250US-350 08-Apr-05 strain gage strain Gages Vishay CEA-XX-250US-350

    LAN9220

    Abstract: nrzi circuit diagram MLT-3 lan-922
    Text: LAN9220 16-bit Non-PCI Small Form Factor 10/100 Ethernet Controller with Variable Voltage I/O & HP Auto-MDIX Support PRODUCT FEATURES Datasheet Highlights „ „ „ „ „ „ „ Efficient architecture with low CPU overhead Easily interfaces to most 16-bit embedded CPU’s


    Original     		PDF LAN9220 16-bit 10BASE-T 100BASE-TX LAN9220 nrzi circuit diagram MLT-3 lan-922

    FCH76N60

    Abstract: No abstract text available
    Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCH76N60N FCH76N60N 218nC) FCH76N60

    FDA20

    Abstract: *20N50F
    Text: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDA20N50 FDA20 *20N50F

    FDPF4N60NZ

    Abstract: No abstract text available
    Text: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP4N60NZ FDPF4N60NZ FDPF4N60NZ

    Untitled

    Abstract: No abstract text available
    Text: Industrial Line – T8W Series 8W 4:1 SINGLE & DUAL OUTPUT HIGH PERFORMANCE DC/DC CONVERTER Specifications INPUT Voltage range 24V nominal input 9-36VDC 48V nominal input 18-75VDC 110V nominal input 43-160VDC Input filter Pi type. Input surge voltage 24V input


    Original     		PDF 9-36VDC 18-75VDC 43-160VDC 50VDC 100mS 100VDC 170VDC 450mS 18VDC 43VDC

    Untitled

    Abstract: No abstract text available
    Text: Datasheet 4-wire Resistive Touch Screen Controller BU21029MUV ●General Description Unlike most resistive touch screen controllers, the BU21029MUV 4-wire resistive touch-screen controller can generate data that enables dual touch detection. The Host processor can use this data to detect single


    Original     		PDF BU21029MUV BU21029MUV 12-bit

    arco trimmer

    Abstract: No abstract text available
    Text: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:


    Original     		PDF ARF521 150MHz ARF521 150MHz. 81MHz arco trimmer

    Untitled

    Abstract: No abstract text available
    Text: CMX7143 CML Microcircuits Multi-Mode Wireless COMMUNICATION SEMICONDUCTORS Data Modem DATASHEET D/7143_FI2.0/1 September 2007 Advance Information FI 2.x Four-Level FSK Packet Data Modem Features • Multiple modulation types • Flexible bit rates • Automatic frame sync detection


    Original     		PDF CMX7143 D/7143 48-pin

    Untitled

    Abstract: No abstract text available
    Text: Datasheet AC/DC Drivers Power Factor Correction and Quasi-Resonant DC/DC converter IC BM1C001F „ PFC Output level setting function „ PFC ON/OFF level setting „ QR low power when load is light Burst operation and frequency decrease function „ QR maximum frequency control (120kHz)


    Original     		PDF BM1C001F 120kHz) BM1C001F

    Untitled

    Abstract: No abstract text available
    Text: ︳ EC9B SERIES 30 WATT 2:1 INPUT DC-DC CONVERTERS FEATURES * 30W Isolated Output * Efficiency to 92% * 2’’ X1’’ Six-Sided Shield Metal Case * Fixed Switching Frequency * 2: 1 Input Range * Regulated Outputs * Input Under Voltage Protection * Over Current Protection


    Original     		PDF 2004/108/EC UL60950-1, EN60950-1, IEC60950-1 EC9B-12S33 7500mA 170mA 2371mA EC9B-12S05 6000mA

    Untitled

    Abstract: No abstract text available
    Text: LAN9217 16-bit High-Performance Single-Chip 10/100 Ethernet Controller with HP Auto-MDIX Support PRODUCT FEATURES Datasheet Highlights „ „ „ „ „ „ „ „ Target Applications „ „ „ „ „ „ „ „ Video distribution systems, multi-room PVR Cable, satellite, and IP set-top boxes


    Original     		PDF LAN9217 16-bit LAN9218 10BASE-T 100BASE-TX

    RT9018B

    Abstract: rt9018 RT9018A
    Text: RT9018A/B Maximum 3A, Ultra Low Dropout Regulator General Description Features The RT9018A/B is a high performance positive voltage regulator designed for use in applications requiring very low Input voltage and very low dropout voltage at up to 3A Peak . It operates with a VIN as low as 1.4V and VDD


    Original     		PDF RT9018A/B RT9018A/B DS9018A/B-08 RT9018B rt9018 RT9018A

    Untitled

    Abstract: No abstract text available
    Text: BU BUF08832 F08 832 SBOS476C – AUGUST 2009 – REVISED JULY 2011 www.ti.com Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory Check for Samples: BUF08832 FEATURES DESCRIPTION • • • • • • The BUF08832 offers eight programmable gamma


    Original     		PDF BUF08832 SBOS476C 10-BIT 300mV 300mA 400kHz BUF08832

    Untitled

    Abstract: No abstract text available
    Text: BUF16821 BU F16 821 SBOS428C – JULY 2008 – REVISED JULY 2011 www.ti.com Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory Check for Samples: BUF16821 FEATURES DESCRIPTION • • • • • The BUF16821 offers 16 programmable gamma


    Original     		PDF BUF16821 SBOS428C 10-BIT 16-CHANNEL 300mV 300mA 400kHz BUF16821

    NTC B 3380

    Abstract: No abstract text available
    Text: TPS65720 TPS65721 www.ti.com SLVS979 – OCTOBER 2009 PMU for Bluetooth Headsets Check for Samples: TPS65720 TPS65721 FEATURES 1 • • 2 • • • • • • • • • • • • • • Battery Charger With Power Path Management 28 V Rated Power Path With:


    Original     		PDF TPS65720 TPS65721 SLVS979 TPS65721 200mA 32-Pin NTC B 3380

    APT54GA60B

    Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
    Text: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT54GA60BD30 APT54GA60SD30 APT54GA60B APT54GA60BD30 APT54GA60SD30 MIC4452 SD30

    APT36GA60B

    Abstract: APT36GA60S MIC4452 c 1853
    Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT36GA60B APT36GA60S APT36GA60B APT36GA60S MIC4452 c 1853

    APT10035LLL

    Abstract: APT100GT120JRDL
    Text: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT120JRDL E145592 APT10035LLL

    APT28GA60BD15

    Abstract: APT6017LLL MIC4452
    Text: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT28GA60BD15 APT28GA60BD15 APT6017LLL MIC4452

    APT28GA60K

    Abstract: MIC4452
    Text: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT28GA60K O-220 shift26) APT28GA60K MIC4452

    transformer 0-12v

    Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
    Text: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 transformer 0-12v J101 0-12V 2204B MRF151 Transistor C2 Unelco J101