TL107 linear
Abstract: TRANSISTOR tl131
Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805
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PTFB182557SH
PTFB182557SH
250-watt
H-34288G-4/2
TL107 linear
TRANSISTOR tl131
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Untitled
Abstract: No abstract text available
Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET specifically designed for use in Doherty cellular power amplifier applications in the 1805
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PTFB182557SH
PTFB182557SH
250-watt
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BENDIX bnc
Abstract: VHF transmitter circuit x-band isolators scm connector PA15
Text: Technical Bulletin Power Amplifiers SCM Products FEATURES • Available for VHF through X-Band • 5 Watts to 250 Watts Output • Telemetry or Video Applications • Narrow and Wideband Models • Available for 12 and 28 Vdc and 115/230 Vac Operation Typical 20 Watt Housing
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Untitled
Abstract: No abstract text available
Text: PTFB192557SH Thermally-Enhanced High Power RF LDMOS FET 255 W, 28 V, 1930 – 1990 MHz Description The PTFB192557SH is a 250-watt LDMOS FET designed specifically for use in Doherty cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Input and output matching has been
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PTFB192557SH
PTFB192557SH
250-watt
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Untitled
Abstract: No abstract text available
Text: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 41 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 250 mA, Vg = -3 V Typical
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TGF2023-02
TGF2023-02
DC-18
0007-inch
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GaN 100 watt
Abstract: No abstract text available
Text: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 41 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 250 mA, Vg = -3 V Typical
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TGF2023-02
TGF2023-02
DC-18
0007-inch
GaN 100 watt
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microverter
Abstract: uv300-28 uV28-T515 microverter d uV300-15 uV28-12 uV300-12 uV300-24 uV300-T512 uV28-5
Text: M I C R O V E R T E R RO MICROVERTER World’s Most Advanced Ultra High Density Single and Triple Output DC-DC Converters ® DC-DC Converters, 200-250 Watt Family Evaluation Boards and Triple Output Modules Available Up to 252 Watts 28, 48, and 300 VDC Input
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370KHz
400MHZ
V48-5
A-32A-8A.
V48-Triple
microverter
uv300-28
uV28-T515
microverter d
uV300-15
uV28-12
uV300-12
uV300-24
uV300-T512
uV28-5
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PDF
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22811
Abstract: HR150 HR151-2812 HR151-2815 B444 B-446 B446
Text: FEATURES HR150 SERIES 20 WATT DC/DC CONVERTERS 12 & 28 VOLT INPUT • –40°C to +85°C operation • 10 to 16 VDC input or 18 to 36 VDC input • Fully Isolated • Optocoupler feedback • Fixed frequency, 125 kHz typical single and dual outputs 250 kHz typical triple outputs
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HR150
HR151
HR152
HR153
B8-14
MIL-PRF-38534,
MIL-STD-883
MILPRF-38534.
HR700
HR300
22811
HR151-2812
HR151-2815
B444
B-446
B446
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elpac mi2815
Abstract: MI2815-760 MI2612-760 MI2818-760 MI2824-760 ELPAC
Text: MI Series 15-28 Watt AC Adapters 5.0 [127.0 mm] 3.0 [76.2 mm] 1.30 [33.0 mm] Electrical Specifications Input Voltage………………………95-250 VAC 90-264 Frequency……………………47-63 Hz Current. .……………1.0 Amp @ 115V
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MI2815-760
MI2818-760
MI2824-760
MI2612-760
elpac mi2815
MI2815-760
MI2612-760
MI2818-760
MI2824-760
ELPAC
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TGF2023-02
Abstract: EAR99
Text: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat 55% Maximum PAE 9.4 dB Nominal Power Gain Bias: Vd = 28 - 35 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC
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TGF2023-02
TGF2023-02
DC-18
0007-inch
EAR99
EAR99
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dc dc converter 4953
Abstract: Interpoint
Text: DC/DC Converters 12 & 28 Volt Input mto Series 15 Watt NOT RECOMMENDED FOR NEW DESIGNS Features • –55°C to +85° C operation models VDC Output • 9 to 16 or 16 to 36 VDC input • Fully isolated triple +5 & ±12 +5 & ±15 • Opto-coupler feedback • Fixed frequency, 250 kHz typical
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MIL-STD-883
MIL-PRF-38534.
MIL-PRF-38534
24223-001-DTS
dc dc converter 4953
Interpoint
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Untitled
Abstract: No abstract text available
Text: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC
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TGF2023-02
TGF2023-02
DC-18
0007-inch
EAR99
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PDF
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Untitled
Abstract: No abstract text available
Text: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC
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TGF2023-02
TGF2023-02
DC-18
0007-inch
EAR99
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PDF
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TGF2023-02
Abstract: GaN Bias 25 watt EAR99 TGF2023-01
Text: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC
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TGF2023-02
TGF2023-02
DC-18
0007-inch
EAR99
GaN Bias 25 watt
EAR99
TGF2023-01
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Untitled
Abstract: No abstract text available
Text: FEATURES • • • * • • • • • –55° to +100°C operation 16 to 40 VDC input Two to eight outputs Fully Isolated 50 V for up to 50 ms transient protection Inhibit function Sync function available on select modules Sense available on select single output modules
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MIL-STD-883
MIL-PRF-38534.
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Untitled
Abstract: No abstract text available
Text: FEATURES • EMI input filter meets MIL-STD-461C, CE03 • Output filter reduces ripple • –55° to +100°C operation • 17 to 40 VDC input, typical • Fully Isolated • 50 V for up to 50 ms transient protection • Inhibit function • Sync function available on
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MIL-STD-461C,
MIL-STD-883
MIL-PRF-38534.
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Untitled
Abstract: No abstract text available
Text: FEATURES • EMI input filter meets MIL-STD-461C, CE03 • Output filter reduces ripple • –55° to +100°C operation • 17 to 40 VDC input, typical • Fully Isolated • 50 V for up to 50 ms transient protection • Inhibit function • Sync function available on
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MIL-STD-461C,
MIL-STD-883
MIL-PRF-38534.
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PDF
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Untitled
Abstract: No abstract text available
Text: HMC994 v00.0611 Amplifiers - Linear & Power - Chip 3 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 32 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT
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HMC994
HMC994
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galvanized iron thermal conductivity
Abstract: ral 7035 paint GE circuit breaker 1 pole C2 type cl mcb trip standard BUSBAR calculation free IEC -320 C19 terminal RAL7024 885032 IEC 60439-1 enclosure BUSBAR calculation
Text: GE Consumer & Industrial Power Protection New QuiXtra 630 Low Voltage distribution boards up to 630A GE imagination at work QuiXtra™630 Introduction A.2 Advantages A.4 Applications A.5 Product description A.7 Features and benefits A.8 Kit structure A.10
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TM630
QuiXtraTM630
galvanized iron thermal conductivity
ral 7035 paint
GE circuit breaker 1 pole C2
type cl mcb trip standard
BUSBAR calculation free
IEC -320 C19 terminal
RAL7024
885032
IEC 60439-1
enclosure BUSBAR calculation
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GHz20
Abstract: No abstract text available
Text: HMC994 v02.1011 Amplifiers - Linear & Power - Chip 3 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT
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HMC994
HMC994
GHz20
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Untitled
Abstract: No abstract text available
Text: HMC994 v02.1011 AMPLIFIERS - LINEAR & POWER - CHIP GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT
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HMC994
HMC994
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PDF
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Untitled
Abstract: No abstract text available
Text: HMC994 v02.1011 AMPLIFIERS - LINEAR & POWER - CHIP GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT
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HMC994
HMC994
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PDF
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Untitled
Abstract: No abstract text available
Text: HMC994 v03.1013 AMPLIFIERS - LINEAR & POWER - CHIP GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT
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HMC994
HMC994
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250 watt
Abstract: CX 1213
Text: Roj Product Index RO ASSOCIATES DC-D C C O N V E R T E R S Page # 250 Watt, 28 VDC Input Series p V28 4-5 250 Watt, 48 VDC Input Series n V48 6-7 250 Watt, 300 VDC Input Series n V300 8-9 100 Watt, NanoVerter Series 15 50 Watt, PicoVerter™ Series 15 6 Watt PC Mount Series CX
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OCR Scan
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AC-300
AC-48VDC
250 watt
CX 1213
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